Novel Engineered Compound Semiconductor Heterostructures for Advanced Electronics Applications PDF Download
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Author: G. E. Stillman
Publisher:
ISBN:
Category : Crystal growth
Languages : en
Pages :
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Book Description
Author: G. E. Stillman
Publisher:
ISBN:
Category : Crystal growth
Languages : en
Pages :
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Book Description
Author:
Publisher:
ISBN:
Category :
Languages : en
Pages : 12
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Book Description
We have investigated novel semiconductor growth, materials, processes and devices. Gaseous source development for metalorganic molecular beam epitaxy (MOMBE) and metalorganic chemical vapor deposition (MOCVD) has been studied (Stillman). Silicon concentrations greater than 1 x 10(exp 19)/cu cm have been demonstrated using SiBr(4) by MOMBE and semi-insulating InP layers with resistivities greater than 1 x 10(exp 8) ohm-cm have been produced by using CCl(4) by MOCVD. High power and high perfomance semiconductor lasers and laser arrays have also been studied (Coleman). Several advanced processing techniques including reactive ion etching and e-beam lithography have been used to fabricate these lasers. In addition, the development of selective area epitaxy by MOCVD enables integration of lasers with electrical components for optoelectronic circuits on a single chip. Finally, use of inpurity induced layer disordering (IILD) and native oxides on high Al content compound semiconductors have been used to develop novel semiconductor laser devices (Holonyak). Microdisk lasers have been demonstrated using the IILD process to define curved geometry lasers. The native oxide has been used in vertical cavity surface emitting lasers VCSELs to define the current flow and to fabricate high-contrast distributed Bragg reflectors (DBRs).
Author: Michael A Stroscio
Publisher: World Scientific
ISBN: 9814486558
Category : Technology & Engineering
Languages : en
Pages : 244
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Book Description
This volume provides valuable summaries on many aspects of advanced semiconductor heterostructures and highlights the great variety of semiconductor heterostructures that has emerged since their original conception. As exemplified by the chapters in this book, recent progress on advanced semiconductor heterostructures spans a truly remarkable range of scientific fields with an associated diversity of applications. Some of these applications will undoubtedly revolutionize critically important facets of modern technology. At the heart of these advances is the ability to design and control the properties of semiconductor devices on the nanoscale. As an example, the intersubband lasers discussed in this book have a broad range of previously unobtainable characteristics and associated applications as a result of the nanoscale dimensional control of the underlying semiconductor heterostructures. As this book illustrates, an astounding variety of heterostructures can be fabricated with current technology; the potentially widespread use of layered quantum dots fabricated with nanoscale precision in biological applications opens up exciting advances in medicine. In addition, many more excellent examples of the remarkable impact being made through the use of semiconductor heterostructures are given. The summaries in this volume provide timely insights into what we know now about selected areas of advanced semiconductor heterostructures and also provide foundations for further developments.
Author:
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ISBN:
Category : Aeronautics
Languages : en
Pages : 704
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Author:
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ISBN:
Category : Military research
Languages : en
Pages : 302
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Author: Fumitaro Ishikawa
Publisher: CRC Press
ISBN: 1315340720
Category : Science
Languages : en
Pages : 420
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Book Description
One dimensional electronic materials are expected to be key components owing to their potential applications in nanoscale electronics, optics, energy storage, and biology. Besides, compound semiconductors have been greatly developed as epitaxial growth crystal materials. Molecular beam and metalorganic vapor phase epitaxy approaches are representative techniques achieving 0D–2D quantum well, wire, and dot semiconductor III-V heterostructures with precise structural accuracy with atomic resolution. Based on the background of those epitaxial techniques, high-quality, single-crystalline III-V heterostructures have been achieved. III-V Nanowires have been proposed for the next generation of nanoscale optical and electrical devices such as nanowire light emitting diodes, lasers, photovoltaics, and transistors. Key issues for the realization of those devices involve the superior mobility and optical properties of III-V materials (i.e., nitride-, phosphide-, and arsenide-related heterostructure systems). Further, the developed epitaxial growth technique enables electronic carrier control through the formation of quantum structures and precise doping, which can be introduced into the nanowire system. The growth can extend the functions of the material systems through the introduction of elements with large miscibility gap, or, alternatively, by the formation of hybrid heterostructures between semiconductors and another material systems. This book reviews recent progresses of such novel III-V semiconductor nanowires, covering a wide range of aspects from the epitaxial growth to the device applications. Prospects of such advanced 1D structures for nanoscience and nanotechnology are also discussed.
Author: Zhaojun Liu
Publisher: Morgan & Claypool Publishers
ISBN: 1627058532
Category : Technology & Engineering
Languages : en
Pages : 75
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Ever since its invention in the 1980s, the compound semiconductor heterojunction-based high electron mobility transistor (HEMT) has been widely used in radio frequency (RF) applications. This book provides readers with broad coverage on techniques and new trends of HEMT, employing leading compound semiconductors, III-N and III-V materials. The content includes an overview of GaN HEMT device-scaling technologies and experimental research breakthroughs in fabricating various GaN MOSHEMT transistors. Readers are offered an inspiring example of monolithic integration of HEMT with LEDs, too. The authors compile the most relevant aspects of III-V HEMT, including the current status of state-of-art HEMTs, their possibility of replacing the Si CMOS transistor channel, and growth opportunities of III-V materials on an Si substrate. With detailed exploration and explanations, the book is a helpful source suitable for anyone learning about and working on compound semiconductor devices.
Author: Mukunda Prasad Das
Publisher: World Scientific
ISBN: 9814495832
Category :
Languages : en
Pages : 395
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Book Description
This book contains lectures delivered at the 10th Physics Summer School on “Physics of Novel Materials” at Australian National University by internationally reputed scientists. It covers a wide variety of materials: semiconductors, superconductors, polymers, zeolites, clusters and nanostructures, and transport in novel materials. It is hard to find theoretical and experimental aspects of such diverse topics on novel materials in a single volume.
Author: Rüdiger Quay
Publisher: Springer Science & Business Media
ISBN: 3540718923
Category : Technology & Engineering
Languages : en
Pages : 492
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Book Description
This book is based on nearly a decade of materials and electronics research at the leading research institution on the nitride topic in Europe. It is a comprehensive monograph and tutorial that will be of interest to graduate students of electrical engineering, communication engineering, and physics; to materials, device, and circuit engineers in research and industry; to all scientists with a general interest in advanced electronics.
Author:
Publisher:
ISBN:
Category :
Languages : en
Pages : 11
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Book Description
Heterostructures formed from III-V semiconductors with the 6.1 lattice spacing "InAs, GaSb, AlSb and related alloys" have attracted significant interest because of their potential to define a new 'state of the art' in applications including 100 GHz high-speed logic circuits, terahertz transistors, sensitive infrared detectors and mid-infrared semiconductor lasers. In this paper, we describe the ongoing work at the Naval Research Laboratory to develop the materials growth and fabrication technology for a variety of 6.1 -based devices that have the potential to revolutionize infrared optoelectronics and low-power high-speed electronics.
