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Author: Alexander A. Balandin
Publisher: Amer Scientific Pub
ISBN: 9781588830050
Category : Reference
Languages : en
Pages : 390
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Book Description
Noise and Fluctuations Control in Electronic Devices is the first single reference source to bring together the latest aspects of noise research for a wide range of multidisciplinary audiences. The goal of this book is to give an update of state-of-the-art in this interdisciplinary field, while focusing on new trends in electronic device noise research. Such new trends include investigation of noise in electronic devices based on novel materials, effects of the downscaling on the device noise performance, fluctuations and noise control in nanodevices, effective methods of noise control and suppression, etc. In addition, the book presents a historic overview of the development of the kinetic theory of fluctuation, essential for understanding of the present state-of-the art. This book contains 18 state-of-the-art review chapters written by 33 internationally renowned experts from 15 countries. This book has about 1,500 bibliographical citations and hundreds of illustrations, figures, tables and equations. This book is a definite reference source for students, scientists, engineers, and specialists both in academia and industry working in such different fields as electronic and optoelectronic devices, electrical and electronic engineering, solid-state physics, nanotechnology, wireless communication, telecommunication, and semiconductor device technology.
Author: Alexander A. Balandin
Publisher: Amer Scientific Pub
ISBN: 9781588830050
Category : Reference
Languages : en
Pages : 390
Get Book Here
Book Description
Noise and Fluctuations Control in Electronic Devices is the first single reference source to bring together the latest aspects of noise research for a wide range of multidisciplinary audiences. The goal of this book is to give an update of state-of-the-art in this interdisciplinary field, while focusing on new trends in electronic device noise research. Such new trends include investigation of noise in electronic devices based on novel materials, effects of the downscaling on the device noise performance, fluctuations and noise control in nanodevices, effective methods of noise control and suppression, etc. In addition, the book presents a historic overview of the development of the kinetic theory of fluctuation, essential for understanding of the present state-of-the art. This book contains 18 state-of-the-art review chapters written by 33 internationally renowned experts from 15 countries. This book has about 1,500 bibliographical citations and hundreds of illustrations, figures, tables and equations. This book is a definite reference source for students, scientists, engineers, and specialists both in academia and industry working in such different fields as electronic and optoelectronic devices, electrical and electronic engineering, solid-state physics, nanotechnology, wireless communication, telecommunication, and semiconductor device technology.
Author: Michael E Levinshtein
Publisher: World Scientific
ISBN: 9814479926
Category : Technology & Engineering
Languages : en
Pages : 223
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Book Description
Impact ionization, avalanche and breakdown phenomena form the basis of many very interesting and important semiconductor devices, such as avalanche photodiodes, avalanche transistors, suppressors, sharpening diodes (diodes with delayed breakdown), as well as IMPATT and TRAPATT diodes. In order to provide maximal speed and power, many semiconductor devices must operate under or very close to breakdown conditions. Consequently, an acquaintance with breakdown phenomena is essential for scientists or engineers dealing with semiconductor devices.The aim of this book is to summarize the main experimental results on avalanche and breakdown phenomena in semiconductors and semiconductor devices and to analyze their features from a unified point of view. Attention is focused on the phenomenology of avalanche multiplication and the various kinds of breakdown phenomena and their qualitative analysis.
Author: Kevin L. Jensen
Publisher: John Wiley & Sons
ISBN: 1119051754
Category : Science
Languages : en
Pages : 716
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Book Description
A practical, in-depth description of the physics behind electron emission physics and its usage in science and technology Electron emission is both a fundamental phenomenon and an enabling component that lies at the very heart of modern science and technology. Written by a recognized authority in the field, with expertise in both electron emission physics and electron beam physics, An Introduction to Electron Emission provides an in-depth look at the physics behind thermal, field, photo, and secondary electron emission mechanisms, how that physics affects the beams that result through space charge and emittance growth, and explores the physics behind their utilization in an array of applications. The book addresses mathematical and numerical methods underlying electron emission, describing where the equations originated, how they are related, and how they may be correctly used to model actual sources for devices using electron beams. Writing for the beam physics and solid state communities, the author explores applications of electron emission methodology to solid state, statistical, and quantum mechanical ideas and concepts related to simulations of electron beams to condensed matter, solid state and fabrication communities. Provides an extensive description of the physics behind four electron emission mechanisms—field, photo, and secondary, and how that physics relates to factors such as space charge and emittance that affect electron beams. Introduces readers to mathematical and numerical methods, their origins, and how they may be correctly used to model actual sources for devices using electron beams Demonstrates applications of electron methodology as well as quantum mechanical concepts related to simulations of electron beams to solid state design and manufacture Designed to function as both a graduate-level text and a reference for research professionals Introduction to the Physics of Electron Emission is a valuable learning tool for postgraduates studying quantum mechanics, statistical mechanics, solid state physics, electron transport, and beam physics. It is also an indispensable resource for academic researchers and professionals who use electron sources, model electron emission, develop cathode technologies, or utilize electron beams.
Author: Marius Grundmann
Publisher: Springer
ISBN: 3319238809
Category : Technology & Engineering
Languages : en
Pages : 998
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Book Description
The 3rd edition of this successful textbook contains ample material for a comprehensive upper-level undergraduate or beginning graduate course, guiding readers to the point where they can choose a special topic and begin supervised research. The textbook provides a balance between essential aspects of solid-state and semiconductor physics, on the one hand, and the principles of various semiconductor devices and their applications in electronic and photonic devices, on the other. It highlights many practical aspects of semiconductors such as alloys, strain, heterostructures, nanostructures, that are necessary in modern semiconductor research but typically omitted in textbooks. Coverage also includes additional advanced topics, such as Bragg mirrors, resonators, polarized and magnetic semiconductors, nanowires, quantum dots, multi-junction solar cells, thin film transistors, carbon-based nanostructures and transparent conductive oxides. The text derives explicit formulas for many results to support better understanding of the topics. The Physics of Semiconductors requires little or no prior knowledge of solid-state physics and evolved from a highly regarded two-semester course. In the third edition several topics are extended and treated in more depth including surfaces, disordered materials, amorphous semiconductors, polarons, thermopower and noise. More than 1800 references guide the reader to historic and current literature including original and review papers and books.
Author: Michael Shur
Publisher: World Scientific
ISBN: 9789812562364
Category : Technology & Engineering
Languages : en
Pages : 310
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Book Description
The unique materials properties of GaN-based semiconductors havestimulated a great deal of interest in research and developmentregarding nitride materials growth and optoelectronic andnitride-based electronic devices. High electron mobility andsaturation velocity, high sheet carrier concentration atheterojunction interfaces, high breakdown field, and low thermalimpedance of GaN-based films grown over SiC or bulk AlN substratesmake nitride-based electronic devices very promising.
Author: Krzysztof Iniewski
Publisher: CRC Press
ISBN: 1351833758
Category : Technology & Engineering
Languages : en
Pages : 442
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Book Description
Space applications, nuclear physics, military operations, medical imaging, and especially electronics (modern silicon processing) are obvious fields in which radiation damage can have serious consequences, i.e., degradation of MOS devices and circuits. Zeroing in on vital aspects of this broad and complex topic, Radiation Effects in Semiconductors addresses the ever-growing need for a clear understanding of radiation effects on semiconductor devices and circuits to combat potential damage it can cause. Features a chapter authored by renowned radiation authority Lawrence T. Clark on Radiation Hardened by Design SRAM Strategies for TID and SEE Mitigation This book analyzes the radiation problem, focusing on the most important aspects required for comprehending the degrading effects observed in semiconductor devices, circuits, and systems when they are irradiated. It explores how radiation interacts with solid materials, providing a detailed analysis of three ways this occurs: Photoelectric effect, Compton effect, and creation of electron-positron pairs. The author explains that the probability of these three effects occurring depends on the energy of the incident photon and the atomic number of the target. The book also discusses the effects that photons can have on matter—in terms of ionization effects and nuclear displacement Written for post-graduate researchers, semiconductor engineers, and nuclear and space engineers with some electronics background, this carefully constructed reference explains how ionizing radiation is creating damage in semiconducting devices and circuits and systems—and how that damage can be avoided in areas such as military/space missions, nuclear applications, plasma damage, and X-ray-based techniques. It features top-notch international experts in industry and academia who address emerging detector technologies, circuit design techniques, new materials, and innovative system approaches.
Author: Neerish Revaprasadu
Publisher: Royal Society of Chemistry
ISBN: 1839168137
Category : Technology & Engineering
Languages : en
Pages : 292
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Book Description
This volume provides a critical and comprehensive assessment of the most recent research and opinion from across the globe for anyone practising in nano-allied fields or wishing to enter the nano-world.
Author: Howard R. Huff
Publisher: The Electrochemical Society
ISBN: 156677439X
Category : Semiconductors
Languages : en
Pages : 599
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Book Description
This was the tenth symposium of the International Symposium on Silcon Material Science and Technology, going back to 1969. This issue provides a unique historical record of the program and will aid in the understanding of silicon materials over the last 35 years.
Author: Brajesh Kumar Kaushik
Publisher: CRC Press
ISBN: 1351670220
Category : Science
Languages : en
Pages : 453
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Book Description
The primary aim of this book is to discuss various aspects of nanoscale device design and their applications including transport mechanism, modeling, and circuit applications. . Provides a platform for modeling and analysis of state-of-the-art devices in nanoscale regime, reviews issues related to optimizing the sub-nanometer device performance and addresses simulation aspect and/or fabrication process of devices Also, includes design problems at the end of each chapter
Author: Massimo Rudan
Publisher: Springer Nature
ISBN: 3030798275
Category : Technology & Engineering
Languages : en
Pages : 1680
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Book Description
This Springer Handbook comprehensively covers the topic of semiconductor devices, embracing all aspects from theoretical background to fabrication, modeling, and applications. Nearly 100 leading scientists from industry and academia were selected to write the handbook's chapters, which were conceived for professionals and practitioners, material scientists, physicists and electrical engineers working at universities, industrial R&D, and manufacturers. Starting from the description of the relevant technological aspects and fabrication steps, the handbook proceeds with a section fully devoted to the main conventional semiconductor devices like, e.g., bipolar transistors and MOS capacitors and transistors, used in the production of the standard integrated circuits, and the corresponding physical models. In the subsequent chapters, the scaling issues of the semiconductor-device technology are addressed, followed by the description of novel concept-based semiconductor devices. The last section illustrates the numerical simulation methods ranging from the fabrication processes to the device performances. Each chapter is self-contained, and refers to related topics treated in other chapters when necessary, so that the reader interested in a specific subject can easily identify a personal reading path through the vast contents of the handbook.
