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Author:
Publisher: Elsevier
ISBN: 0080534767
Category : Technology & Engineering
Languages : en
Pages : 967
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Book Description
Silicon technology today forms the basis of a world-wide, multi-billion dollar component industry. The reason for this expansion can be found not only in the physical properties of silicon but also in the unique properties of the silicon-silicon dioxide interface. However, silicon devices are still subject to undesired electrical phenomena called "instabilities". These are due mostly to the imperfect nature of the insulators used, to the not-so-perfect silicon-insulator interface and to the generation of defects and ionization phenomena caused by radiation. The problem of instabilities is addressed in this volume, the third of this book series. Vol.3 updates and supplements the material presented in the previous two volumes, and devotes five chapters to the problems of radiation-matter and radiation-device interactions. The volume will aid circuit manufacturers and circuit users alike to relate unstable electrical parameters and characteristics to the presence of physical defects and impurities or to the radiation environment which caused them.
Author:
Publisher: Elsevier
ISBN: 0080534767
Category : Technology & Engineering
Languages : en
Pages : 967
Get Book Here
Book Description
Silicon technology today forms the basis of a world-wide, multi-billion dollar component industry. The reason for this expansion can be found not only in the physical properties of silicon but also in the unique properties of the silicon-silicon dioxide interface. However, silicon devices are still subject to undesired electrical phenomena called "instabilities". These are due mostly to the imperfect nature of the insulators used, to the not-so-perfect silicon-insulator interface and to the generation of defects and ionization phenomena caused by radiation. The problem of instabilities is addressed in this volume, the third of this book series. Vol.3 updates and supplements the material presented in the previous two volumes, and devotes five chapters to the problems of radiation-matter and radiation-device interactions. The volume will aid circuit manufacturers and circuit users alike to relate unstable electrical parameters and characteristics to the presence of physical defects and impurities or to the radiation environment which caused them.
Author: Gérard Barbottin
Publisher:
ISBN:
Category : Integrated circuits
Languages : en
Pages : 933
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Book Description
Author:
Publisher:
ISBN:
Category :
Languages : en
Pages :
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Book Description
Author: C. L. Hanks
Publisher:
ISBN:
Category : Dielectrics
Languages : en
Pages : 68
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Book Description
Author: Waldemar Alfredo Monteiro
Publisher: BoD – Books on Demand
ISBN: 953512417X
Category : Science
Languages : en
Pages : 464
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Book Description
The study of radiation effects has developed as a major field of materials science from the beginning, approximately 70 years ago. Its rapid development has been driven by two strong influences. The properties of the crystal defects and the materials containing them may then be studied. The types of radiation that can alter structural materials consist of neutrons, ions, electrons, gamma rays or other electromagnetic waves with different wavelengths. All of these forms of radiation have the capability to displace atoms/molecules from their lattice sites, which is the fundamental process that drives the changes in all materials. The effect of irradiation on materials is fixed in the initial event in which an energetic projectile strikes a target. The book is distributed in four sections: Ionic Materials; Biomaterials; Polymeric Materials and Metallic Materials.
Author: Lining Yu
Publisher:
ISBN:
Category :
Languages : en
Pages : 75
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Book Description
Author: Werner Wesch
Publisher:
ISBN:
Category : Electric insulators and insulation
Languages : en
Pages : 983
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Book Description
Author: N. Iton
Publisher:
ISBN:
Category :
Languages : en
Pages :
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Book Description
Author: T. P. Ma
Publisher: John Wiley & Sons
ISBN: 9780471848936
Category : Technology & Engineering
Languages : en
Pages : 616
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Book Description
The first comprehensive overview describing the effects of ionizing radiation on MOS devices, as well as how to design, fabricate, and test integrated circuits intended for use in a radiation environment. Also addresses process-induced radiation effects in the fabrication of high-density circuits. Reviews the history of radiation-hard technology, providing background information for those new to the field. Includes a comprehensive review of the literature and an annotated listing of research activities in radiation-hardness research.
Author: I. H. Wilson
Publisher:
ISBN: 9780677216201
Category :
Languages : en
Pages : 0
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Book Description
