Near Infrared Detectors Based on Silicon Supersaturated with Transition Metals

Near Infrared Detectors Based on Silicon Supersaturated with Transition Metals PDF Author: Daniel Montero Álvarez
Publisher: Springer Nature
ISBN: 303063826X
Category : Technology & Engineering
Languages : en
Pages : 262

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Book Description
This thesis makes a significant contribution to the development of cheaper Si-based Infrared detectors, operating at room temperature. In particular, the work is focused in the integration of the Ti supersaturated Si material into a CMOS Image Sensor route, the technology of choice for imaging nowadays due to its low-cost and high resolution. First, the material is fabricated using ion implantation of Ti atoms at high concentrations. Afterwards, the crystallinity is recovered by means of a pulsed laser process. The material is used to fabricate planar photodiodes, which are later characterized using current-voltage and quantum efficiency measurements. The prototypes showed improved sub-bandgap responsivity up to 0.45 eV at room temperature. The work is further supported by a collaboration with STMicroelectronics, where the supersaturated material was integrated into CMOS-based sensors at industry level. The results show that Ti supersaturated Si is compatible in terms of contamination, process integration and uniformity. The devices showed similar performance to non-implanted devices in the visible region. This fact leaves the door open for further integration of supersaturated materials into CMOS Image Sensors.

Near Infrared Detectors Based on Silicon Supersaturated with Transition Metals

Near Infrared Detectors Based on Silicon Supersaturated with Transition Metals PDF Author: Daniel Montero Álvarez
Publisher: Springer Nature
ISBN: 303063826X
Category : Technology & Engineering
Languages : en
Pages : 262

Get Book Here

Book Description
This thesis makes a significant contribution to the development of cheaper Si-based Infrared detectors, operating at room temperature. In particular, the work is focused in the integration of the Ti supersaturated Si material into a CMOS Image Sensor route, the technology of choice for imaging nowadays due to its low-cost and high resolution. First, the material is fabricated using ion implantation of Ti atoms at high concentrations. Afterwards, the crystallinity is recovered by means of a pulsed laser process. The material is used to fabricate planar photodiodes, which are later characterized using current-voltage and quantum efficiency measurements. The prototypes showed improved sub-bandgap responsivity up to 0.45 eV at room temperature. The work is further supported by a collaboration with STMicroelectronics, where the supersaturated material was integrated into CMOS-based sensors at industry level. The results show that Ti supersaturated Si is compatible in terms of contamination, process integration and uniformity. The devices showed similar performance to non-implanted devices in the visible region. This fact leaves the door open for further integration of supersaturated materials into CMOS Image Sensors.

Near Infrared Detectors Based on Silicon Supersaturated with Transition Metals

Near Infrared Detectors Based on Silicon Supersaturated with Transition Metals PDF Author: Daniel Montero Álvarez
Publisher:
ISBN: 9783030638276
Category :
Languages : en
Pages : 0

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Book Description
This thesis makes a significant contribution to the development of cheaper Si-based Infrared detectors, operating at room temperature. In particular, the work is focused in the integration of the Ti supersaturated Si material into a CMOS Image Sensor route, the technology of choice for imaging nowadays due to its low-cost and high resolution. First, the material is fabricated using ion implantation of Ti atoms at high concentrations. Afterwards, the crystallinity is recovered by means of a pulsed laser process. The material is used to fabricate planar photodiodes, which are later characterized using current-voltage and quantum efficiency measurements. The prototypes showed improved sub-bandgap responsivity up to 0.45 eV at room temperature. The work is further supported by a collaboration with STMicroelectronics, where the supersaturated material was integrated into CMOS-based sensors at industry level. The results show that Ti supersaturated Si is compatible in terms of contamination, process integration and uniformity. The devices showed similar performance to non-implanted devices in the visible region. This fact leaves the door open for further integration of supersaturated materials into CMOS Image Sensors.

Laser Annealing Processes in Semiconductor Technology

Laser Annealing Processes in Semiconductor Technology PDF Author: Fuccio Cristiano
Publisher: Woodhead Publishing
ISBN: 0128202564
Category : Technology & Engineering
Languages : en
Pages : 428

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Book Description
Laser Annealing Processes in Semiconductor Technology: Theory, Modeling and Applications in Nanoelectronics synthesizes the scientific and technological advances of laser annealing processes for current and emerging nanotechnologies. The book provides an overview of the laser-matter interactions of materials and recent advances in modeling of laser-related phenomena, with the bulk of the book focusing on current and emerging (beyond-CMOS) applications. Reviewed applications include laser annealing of CMOS, group IV semiconductors, superconducting materials, photonic materials, 2D materials. This comprehensive book is ideal for post-graduate students, new entrants, and experienced researchers in academia, research and development in materials science, physics and engineering. - Introduces the fundamentals of laser materials and device fabrication methods, including laser-matter interactions and laser-related phenomena - Addresses advances in physical modeling and in predictive simulations of laser annealing processes such as atomistic modeling and TCAD simulations - Reviews current and emerging applications of laser annealing processes such as CMOS technology and group IV semiconductors

Scientific and Technical Aerospace Reports

Scientific and Technical Aerospace Reports PDF Author:
Publisher:
ISBN:
Category : Aeronautics
Languages : en
Pages : 716

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Metals Abstracts

Metals Abstracts PDF Author:
Publisher:
ISBN:
Category : Metallurgy
Languages : en
Pages : 1488

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Physics Briefs

Physics Briefs PDF Author:
Publisher:
ISBN:
Category : Physics
Languages : en
Pages : 1420

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Energy Research Abstracts

Energy Research Abstracts PDF Author:
Publisher:
ISBN:
Category : Power resources
Languages : en
Pages : 668

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Semiannual, with semiannual and annual indexes. References to all scientific and technical literature coming from DOE, its laboratories, energy centers, and contractors. Includes all works deriving from DOE, other related government-sponsored information, and foreign nonnuclear information. Arranged under 39 categories, e.g., Biomedical sciences, basic studies; Biomedical sciences, applied studies; Health and safety; and Fusion energy. Entry gives bibliographical information and abstract. Corporate, author, subject, report number indexes.

Nuclear Science Abstracts

Nuclear Science Abstracts PDF Author:
Publisher:
ISBN:
Category : Nuclear energy
Languages : en
Pages : 894

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International Aerospace Abstracts

International Aerospace Abstracts PDF Author:
Publisher:
ISBN:
Category : Aeronautics
Languages : en
Pages : 944

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Abstracts

Abstracts PDF Author: Materials Research Society. Meeting
Publisher:
ISBN:
Category : Materials science
Languages : en
Pages : 504

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