Molecular beam epitaxy of low temperature gallium arsenide PDF Download
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Author: Anand Srinivasan
Publisher:
ISBN:
Category : Molecular beam epitaxy
Languages : en
Pages : 142
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Author: Anand Srinivasan
Publisher:
ISBN:
Category : Molecular beam epitaxy
Languages : en
Pages : 142
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Author: S. P. OH̀agan
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ISBN:
Category :
Languages : en
Pages :
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Author: Sivakumar Muthuvenkatraman
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ISBN:
Category : Gallium arsenide
Languages : en
Pages : 80
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Author: Curtis Friedrich Sell
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ISBN:
Category :
Languages : en
Pages : 92
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This research studies electrical properties of low-temperature grown gallium arsenide antimonide (LT GaAs[subscript x]Sb[subscript (, -x)]) films as a function of composition, and examines low-temperature aluminum arsenide and gallium arsenide for comparison. Literature on LT GaAs, bulk GaAsSb, and MBE grown GaAsSb, and existing models for choosing MBE growth parameters are presented. After MBE growth of samples at 300°C, and measurement of their composition using XRD, an improved growth model is constructed. Sheet resistance, mobility, doping type and carrier concentration of the samples grown were determined by Hall and Van der Pauw measurements. The LT GaAsSb sheet resistance decreases with increasing Sb content.
Author: S. P. O'Hagan
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Category :
Languages : en
Pages :
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Author: Natarajan Krishnan
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ISBN:
Category : Gallium arsenide
Languages : en
Pages : 108
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Author: Ri-an Zhao
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Category :
Languages : en
Pages : 284
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Author: Laffite Flanders
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Category :
Languages : en
Pages : 98
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Author: S. M. Townsend
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Category :
Languages : en
Pages :
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Author: Susan M. Lindsay
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ISBN:
Category : Gallium arsenide semiconductors
Languages : en
Pages : 130
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