Molecular Beam Epitaxy of Aluminum Gallium Arsenide on Channeled Substrates

Molecular Beam Epitaxy of Aluminum Gallium Arsenide on Channeled Substrates PDF Author: Edward Allen Van Gieson
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ISBN:
Category : Aluminum gallium arsenide
Languages : en
Pages : 278

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Gallium Arsenide and Aluminum Gallium Arsenide on Germanium and Silicon Substrates Grown by Molecular Beam Epitaxy for Device Applications

Gallium Arsenide and Aluminum Gallium Arsenide on Germanium and Silicon Substrates Grown by Molecular Beam Epitaxy for Device Applications PDF Author: Timothy Scott Henderson
Publisher:
ISBN:
Category :
Languages : en
Pages : 90

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Molecular-beam Epitaxial Growth and Characterization of Aluminum Gallium Arsenide/indium Gallium Arsenide Single Quantum-well Modulation-doped Field-effect Transistor Structures

Molecular-beam Epitaxial Growth and Characterization of Aluminum Gallium Arsenide/indium Gallium Arsenide Single Quantum-well Modulation-doped Field-effect Transistor Structures PDF Author: David Constantine Radulescu
Publisher:
ISBN:
Category : Doped semiconductors
Languages : en
Pages : 578

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Mechanisms of Impurity Redistribution in Gallium Arsenide Substrates and Molecular Beam Epitaxially Grown Layers

Mechanisms of Impurity Redistribution in Gallium Arsenide Substrates and Molecular Beam Epitaxially Grown Layers PDF Author: Susan C. Palmateer
Publisher:
ISBN:
Category : Gallium arsenide semiconductors
Languages : en
Pages : 570

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Demand Bibliography

Demand Bibliography PDF Author:
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ISBN:
Category : Gallium arsenide semiconductors
Languages : en
Pages : 44

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Molecular Beam Epitaxial (MBE) Growth of Gallium Arsenide and Gallium Aluminum Arsenide

Molecular Beam Epitaxial (MBE) Growth of Gallium Arsenide and Gallium Aluminum Arsenide PDF Author: Helmut Kanter
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ISBN:
Category :
Languages : en
Pages : 27

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The construction and operation of a molecular beam epitaxial (MBE) system for promoting the epitaxial growth of gallium arsenide (GaAs) and gallium aluminum arsenide (FaAlAs) materials is described. These materials are studied in support of development of GaAs-based microwave and millimeter-wave devices as well as fast integrated digital circuits.

Molecular-beam-epitaxy Grown Channeled-substrate Multiple-quantum-well Lasers, Surface-emitting Laser Diodes, and Study of Dopant Effect on Disordering of Superlattice

Molecular-beam-epitaxy Grown Channeled-substrate Multiple-quantum-well Lasers, Surface-emitting Laser Diodes, and Study of Dopant Effect on Disordering of Superlattice PDF Author: Yao-Hwa Wu
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ISBN:
Category :
Languages : en
Pages : 362

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Gallium Arsenide and Related Compounds

Gallium Arsenide and Related Compounds PDF Author:
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ISBN:
Category : Gallium arsenide
Languages : en
Pages : 876

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The Molecular Beam Epitaxial Growth and Characterization of Indium Gallium Arsenide and Silicon Substrates

The Molecular Beam Epitaxial Growth and Characterization of Indium Gallium Arsenide and Silicon Substrates PDF Author: David Ian Westwood
Publisher:
ISBN:
Category :
Languages : en
Pages : 432

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Manganese Incorporation in Gallium Arsenide Grown by Molecular Beam Epitaxy

Manganese Incorporation in Gallium Arsenide Grown by Molecular Beam Epitaxy PDF Author: Susan C. Palmateer
Publisher:
ISBN:
Category : Gallium arsenide semiconductors
Languages : en
Pages : 286

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