Molecular Beam Epitaxial Growth of Gallium Arsenide on Silicon PDF Download
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Author: Gordon Orvis Munns
Publisher:
ISBN:
Category :
Languages : en
Pages : 148
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Author: Gordon Orvis Munns
Publisher:
ISBN:
Category :
Languages : en
Pages : 148
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Author: David Andrew Woolf
Publisher:
ISBN:
Category :
Languages : en
Pages :
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Author: David Ian Westwood
Publisher:
ISBN:
Category :
Languages : en
Pages : 432
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Author: David Ian Westwood
Publisher:
ISBN:
Category :
Languages : en
Pages :
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Author: Stephanie Maxine Koch
Publisher:
ISBN:
Category :
Languages : en
Pages : 192
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Author: David Constantine Radulescu
Publisher:
ISBN:
Category : Doped semiconductors
Languages : en
Pages : 578
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Author: Jukka Varrio
Publisher:
ISBN: 9789517216746
Category :
Languages : en
Pages : 36
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Author: E. Kasper
Publisher: CRC Press
ISBN: 1351093525
Category : Technology & Engineering
Languages : en
Pages : 411
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Book Description
This subject is divided into two volumes. Volume I is on homoepitaxy with the necessary systems, techniques, and models for growth and dopant incorporation. Three chapters on homoepitaxy are followed by two chapters describing the different ways in which MBE may be applied to create insulator/Si stackings which may be used for three-dimensional circuits. The two remaining chapters in Volume I are devoted to device applications. The first three chapters of Volume II treat all aspects of heteroepitaxy with the exception of the epitaxial insulator/Si structures already treated in volume I.
Author: Helmut Kanter
Publisher:
ISBN:
Category :
Languages : en
Pages : 27
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Book Description
The construction and operation of a molecular beam epitaxial (MBE) system for promoting the epitaxial growth of gallium arsenide (GaAs) and gallium aluminum arsenide (FaAlAs) materials is described. These materials are studied in support of development of GaAs-based microwave and millimeter-wave devices as well as fast integrated digital circuits.
Author:
Publisher:
ISBN:
Category : Gallium arsenide semiconductors
Languages : en
Pages : 44
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