Modelling and Experimental Study of Plasma Enhanced Chemical Vapor Deposition of Silicon Nitride Films PDF Download
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Author: Chue-san Yoo
Publisher:
ISBN:
Category : Vapor-plating
Languages : en
Pages : 210
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Author: Chue-san Yoo
Publisher:
ISBN:
Category : Vapor-plating
Languages : en
Pages : 210
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Author: Ronald James Spence
Publisher:
ISBN:
Category : Plasma-enhanced chemical vapor deposition
Languages : en
Pages : 460
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Author: Sui-Yuan Lynn
Publisher:
ISBN:
Category : Silicon nitride
Languages : en
Pages : 212
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Author: Todd Alan Brooks
Publisher:
ISBN:
Category :
Languages : en
Pages : 286
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Author:
Publisher:
ISBN:
Category :
Languages : en
Pages : 31
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Crystalline thin films of silicon nitride have been grown on a variety of substrates by microwave plasma-enhanced chemical vapor deposition using N2, O2, and CH4 gases at a temperature of 800 deg C. X-ray diffraction and Rutherford backscattering measurements indicate the deposits are stoichiometric silicon nitride with varying amounts of the alpha and beta phases. Scanning electron microscope imaging indicates beta-Si3N4 possesses six-fold symmetry with particles size in the submicron range. In one experiment, the silicon necessary for growth comes from the single crystal silicon substrate due to etching/sputtering by the nitrogen plasma. The dependence of the grain size on the methane concentration is investigated. In an another experiment, an organo- silicon source, methoxytrimethylsilane, is used to grow silicon nitride with controlled introduction of the silicon necessary for growth. Thin crystalline films are deposited at rates of 0.1 micrometer/hr as determined by profilometry. A growth mechanism for both cases is proposed.
Author: Giridhar Nallapati
Publisher:
ISBN:
Category :
Languages : en
Pages : 108
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Author: Rhett Eugene Livengood
Publisher:
ISBN:
Category :
Languages : en
Pages : 304
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Author: Chris R. Kleijn
Publisher: Birkhäuser
ISBN: 3034877412
Category : Science
Languages : en
Pages : 138
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Book Description
Semiconductor equipment modeling has in recent years become a field of great interest, because it offers the potential to support development and optimization of manufacturing equipment and hence reduce the cost and improve the quality of the reactors. This book is the result of two parallel lines of research dealing with the same subject - Modeling of Tungsten CVD processes -, which were per formed independently under very different boundary conditions. On the one side, Chris Kleijn, working in an academic research environment, was able to go deep enough into the subject to laya solid foundation and prove the validity of all the assumptions made in his work. On the other side, Christoph Werner, working in the context of an industrial research lab, was able to closely interact with manufacturing and development engineers in a modern submicron semiconductor processing line. Because of these different approaches, the informal collaboration during the course of the projects proved to be extremely helpful to both sides, even though - or perhaps because - different computer codes, different CVD reactors and also slightly different models were used. In spite of the inconsistencies which might arise from this double approach, we feel that the presentation of both sets of results in one book will be very useful for people working in similar projects.
Author: Yanyao Yu
Publisher:
ISBN:
Category : Diethysilane
Languages : en
Pages : 116
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Author: Kevin John Grannen
Publisher:
ISBN:
Category :
Languages : en
Pages :
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