Modèles électriques pour la conception des circuits intégrés silicium PDF Download
Are you looking for read ebook online? Search for your book and save it on your Kindle device, PC, phones or tablets. Download Modèles électriques pour la conception des circuits intégrés silicium PDF full book. Access full book title Modèles électriques pour la conception des circuits intégrés silicium by Jacques Gautier. Download full books in PDF and EPUB format.
Author: Jacques Gautier
Publisher:
ISBN: 9782746209541
Category :
Languages : fr
Pages : 352
Get Book Here
Book Description
Author: Jacques Gautier
Publisher:
ISBN: 9782746209541
Category :
Languages : fr
Pages : 352
Get Book Here
Book Description
Author: Fengyuan Sun
Publisher: Editions Publibook
ISBN: 2753903298
Category :
Languages : en
Pages : 178
Get Book Here
Book Description
The proposal of doubling the number of transistors on an IC chip (with minimum costs and subtle innovations) every 24 months by Gordon Moore in 1965 (the so-called called Moore's law) has been the most powerful driver for the emphasis of the microelectronics industry in the past 50 years. This law enhances lithography scaling and integration, in 2D, of all functions on a single chip, increasingly through system-on-chip (SOC). On the other hand, the integration of all these functions can be achieved through 3D integrations . Generally speaking, 3D integration consists of 3D IC packaging, 3D IC integration, and 3D Si integration. They are different and mostly the TSV (through-silicon via) separates 3D IC packaging from 3D IC/Si integrations since the latter two uses TSVs, but 3D IC packaging does not. TSV (with a new concept that every chip or interposer could have two surfaces with circuits) is the heart of 3D IC/Si integrations. Continued technology scaling together with the integration of disparate technologies in a single chip means that device performance continues to outstrip interconnect and packaging capabilities, and hence there exist many difficult engineering challenges, most notably in power management, noise isolation, and intra and inter-chip communication. 3D Si integration is the right way to go and compete with Moore's law (more than Moore versus more Moore). However, it is still a long way to go. In this book, Fengyuan SUN proposes new substrate network extraction techniques. Using this latter, the substrate coupling and loss in IC's can be analyzed. He implements some Green/TLM (Transmission Line Matrix) algorithms in MATLAB. It permits to extract impedances between any number of embedded contacts or/and TSVS. He does investigate models of high aspect ratio TSV, on both analytical and numerical methods electromagnetic simulations. This model enables to extract substrate and TSV impedance, S parameters and parasitic elements, considering the variable resistivity of the substrate. It is full compatible with SPICE-like solvers and should allow an investigation in depth of TSV impact on circuit performance.
Author:
Publisher:
ISBN:
Category : Electronics
Languages : fr
Pages : 92
Get Book Here
Book Description
Author: M. H. Hamza
Publisher: Anaheim [Calif.] ; Calgary : Acta Press
ISBN:
Category : Computers
Languages : en
Pages : 554
Get Book Here
Book Description
Author: Jean-Pierre Charles
Publisher: Editions de Physique
ISBN:
Category : Science
Languages : fr
Pages : 652
Get Book Here
Book Description
Author:
Publisher:
ISBN:
Category : Astronautics
Languages : fr
Pages : 878
Get Book Here
Book Description
Author:
Publisher:
ISBN:
Category : Automatic control
Languages : fr
Pages : 700
Get Book Here
Book Description
Author:
Publisher:
ISBN:
Category : Computer programming
Languages : fr
Pages : 660
Get Book Here
Book Description
![Canadian Communications & Power Conference : [papers] PDF](https://books.google.com/books/content/images/frontcover/XfdVAAAAMAAJ?fife=w80-h100)
Author:
Publisher:
ISBN:
Category : Electric power
Languages : en
Pages : 516
Get Book Here
Book Description
Author:
Publisher:
ISBN:
Category : Electric power distribution
Languages : en
Pages : 502
Get Book Here
Book Description
