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Author: Lado Filipovic
Publisher:
ISBN: 9783036541709
Category :
Languages : en
Pages : 0
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Book Description
In this book, we aim to address the ever-advancing progress in microelectronic device scaling. Complementary Metal-Oxide-Semiconductor (CMOS) devices continue to endure miniaturization, irrespective of the seeming physical limitations, helped by advancing fabrication techniques. We observe that miniaturization does not always refer to the latest technology node for digital transistors. Rather, by applying novel materials and device geometries, a significant reduction in the size of microelectronic devices for a broad set of applications can be achieved. The achievements made in the scaling of devices for applications beyond digital logic (e.g., high power, optoelectronics, and sensors) are taking the forefront in microelectronic miniaturization. Furthermore, all these achievements are assisted by improvements in the simulation and modeling of the involved materials and device structures. In particular, process and device technology computer-aided design (TCAD) has become indispensable in the design cycle of novel devices and technologies. It is our sincere hope that the results provided in this Special Issue prove useful to scientists and engineers who find themselves at the forefront of this rapidly evolving and broadening field. Now, more than ever, it is essential to look for solutions to find the next disrupting technologies which will allow for transistor miniaturization well beyond silicon's physical limits and the current state-of-the-art. This requires a broad attack, including studies of novel and innovative designs as well as emerging materials which are becoming more application-specific than ever before.
Author: Lado Filipovic
Publisher:
ISBN: 9783036541709
Category :
Languages : en
Pages : 0
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Book Description
In this book, we aim to address the ever-advancing progress in microelectronic device scaling. Complementary Metal-Oxide-Semiconductor (CMOS) devices continue to endure miniaturization, irrespective of the seeming physical limitations, helped by advancing fabrication techniques. We observe that miniaturization does not always refer to the latest technology node for digital transistors. Rather, by applying novel materials and device geometries, a significant reduction in the size of microelectronic devices for a broad set of applications can be achieved. The achievements made in the scaling of devices for applications beyond digital logic (e.g., high power, optoelectronics, and sensors) are taking the forefront in microelectronic miniaturization. Furthermore, all these achievements are assisted by improvements in the simulation and modeling of the involved materials and device structures. In particular, process and device technology computer-aided design (TCAD) has become indispensable in the design cycle of novel devices and technologies. It is our sincere hope that the results provided in this Special Issue prove useful to scientists and engineers who find themselves at the forefront of this rapidly evolving and broadening field. Now, more than ever, it is essential to look for solutions to find the next disrupting technologies which will allow for transistor miniaturization well beyond silicon's physical limits and the current state-of-the-art. This requires a broad attack, including studies of novel and innovative designs as well as emerging materials which are becoming more application-specific than ever before.
Author: Lado Filipovic
Publisher: MDPI
ISBN: 3039210106
Category : Technology & Engineering
Languages : en
Pages : 202
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Book Description
What is the future of CMOS? Sustaining increased transistor densities along the path of Moore's Law has become increasingly challenging with limited power budgets, interconnect bandwidths, and fabrication capabilities. In the last decade alone, transistors have undergone significant design makeovers; from planar transistors of ten years ago, technological advancements have accelerated to today's FinFETs, which hardly resemble their bulky ancestors. FinFETs could potentially take us to the 5-nm node, but what comes after it? From gate-all-around devices to single electron transistors and two-dimensional semiconductors, a torrent of research is being carried out in order to design the next transistor generation, engineer the optimal materials, improve the fabrication technology, and properly model future devices. We invite insight from investigators and scientists in the field to showcase their work in this Special Issue with research papers, short communications, and review articles that focus on trends in micro- and nanotechnology from fundamental research to applications.
Author: Lado Filipovic
Publisher:
ISBN: 9783039210114
Category : Engineering (General). Civil engineering (General)
Languages : en
Pages : 202
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Book Description
What is the future of CMOS? Sustaining increased transistor densities along the path of Moore's Law has become increasingly challenging with limited power budgets, interconnect bandwidths, and fabrication capabilities. In the last decade alone, transistors have undergone significant design makeovers; from planar transistors of ten years ago, technological advancements have accelerated to today's FinFETs, which hardly resemble their bulky ancestors. FinFETs could potentially take us to the 5-nm node, but what comes after it? From gate-all-around devices to single electron transistors and two-dimensional semiconductors, a torrent of research is being carried out in order to design the next transistor generation, engineer the optimal materials, improve the fabrication technology, and properly model future devices. We invite insight from investigators and scientists in the field to showcase their work in this Special Issue with research papers, short communications, and review articles that focus on trends in micro- and nanotechnology from fundamental research to applications.
Author:
Publisher: Office of Technology Assessment
ISBN:
Category : Business & Economics
Languages : en
Pages : 64
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Book Description
Author: Sina Ebnesajjad
Publisher: William Andrew
ISBN: 1455731986
Category : Technology & Engineering
Languages : en
Pages : 766
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Book Description
Fluoroplastics, Volume 2: Melt Processible Fluoropolymers - The Definitive User's Guide and Data Book compiles the working knowledge of the polymer chemistry and physics of melt processible fluoropolymers with detailed descriptions of commercial processing methods, material properties, fabrication and handling information, technologies, and applications, also including history, market statistics, and safety and recycling aspects. Both volumes of Fluoroplastics contain a large amount of specific property data useful for users to readily compare different materials and align material structure with end use applications. Volume Two concentrates on melt-processible fluoropolymers used across a broad range of industries, including automotive, aerospace, electronic, food, beverage, oil/gas, and medical devices. This new edition is a thoroughly updated and significantly expanded revision covering new technologies and applications, and addressing the changes that have taken place in the fluoropolymer markets. Exceptionally broad and comprehensive coverage of melt processible fluoropolymers processing and applications Provides a practical approach, written by long-standing authorities in the fluoropolymers industry Thoroughly updated and significantly expanded revision covering new technologies and applications, and addressing the changes that have taken place in the fluoropolymer markets
Author: Sina Ebnesajjad
Publisher: William Andrew
ISBN: 0815517289
Category : Technology & Engineering
Languages : en
Pages : 689
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Book Description
This is the second of a two volume series of books about fluoroplastics. Volume 1 covers the non-melt processible homopolymers, requiring non-traditional processing techniques. Volume 2 is devoted to the melt-processible fluoropolymers, their polymerization and fabrication techniques including injection molding, wire, tube, and film extrusion, rotational molding, blow molding, compression molding, and transfer molding. Both a source of data and a reference, the properties, characteristics, applications, safety, disposal, and recycling of melt-processible fluoropolymers are comprehensively detailed for immediate use by today's practicing engineering and scientists in the plastics industry. Students will benefit from the book's arrangement and extensive references.
Author: Alain Vignes
Publisher: John Wiley & Sons
ISBN: 1394297637
Category : Technology & Engineering
Languages : en
Pages : 175
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Book Description
Silicon is the material of the digital revolution, of solar energy and of digital photography, which has revolutionized both astronomy and medical imaging. It is also the material of microelectromechanical systems (MEMS), indispensable components of smart objects. The discovery of the electronic and optoelectronic properties of germanium and silicon during the Second World War, followed by the invention of the transistor, ushered in the digital age. Although the first transistors were made from germanium, silicon eventually became the preferred material for these technologies. Silicon, From Sand to Chips 2 traces the history of the discoveries, inventions and developments in basic components and chips that these two materials enabled one after the other. The book is divided into two volumes and this second volume is devoted to microelectronic and optoelectronic chips, solar cells and MEMS.
Author: D. Nirmal
Publisher: CRC Press
ISBN: 0429862520
Category : Science
Languages : en
Pages : 446
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Book Description
This book focusses on III-V high electron mobility transistors (HEMTs) including basic physics, material used, fabrications details, modeling, simulation, and other important aspects. It initiates by describing principle of operation, material systems and material technologies followed by description of the structure, I-V characteristics, modeling of DC and RF parameters of AlGaN/GaN HEMTs. The book also provides information about source/drain engineering, gate engineering and channel engineering techniques used to improve the DC-RF and breakdown performance of HEMTs. Finally, the book also highlights the importance of metal oxide semiconductor high electron mobility transistors (MOS-HEMT). Key Features Combines III-As/P/N HEMTs with reliability and current status in single volume Includes AC/DC modelling and (sub)millimeter wave devices with reliability analysis Covers all theoretical and experimental aspects of HEMTs Discusses AlGaN/GaN transistors Presents DC, RF and breakdown characteristics of HEMTs on various material systems using graphs and plots
Author: Geert Hellings
Publisher: Springer Science & Business Media
ISBN: 9400763409
Category : Technology & Engineering
Languages : en
Pages : 154
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Book Description
For many decades, the semiconductor industry has miniaturized transistors, delivering increased computing power to consumers at decreased cost. However, mere transistor downsizing does no longer provide the same improvements. One interesting option to further improve transistor characteristics is to use high mobility materials such as germanium and III-V materials. However, transistors have to be redesigned in order to fully benefit from these alternative materials. High Mobility and Quantum Well Transistors: Design and TCAD Simulation investigates planar bulk Germanium pFET technology in chapters 2-4, focusing on both the fabrication of such a technology and on the process and electrical TCAD simulation. Furthermore, this book shows that Quantum Well based transistors can leverage the benefits of these alternative materials, since they confine the charge carriers to the high-mobility material using a heterostructure. The design and fabrication of one particular transistor structure - the SiGe Implant-Free Quantum Well pFET – is discussed. Electrical testing shows remarkable short-channel performance and prototypes are found to be competitive with a state-of-the-art planar strained-silicon technology. High mobility channels, providing high drive current, and heterostructure confinement, providing good short-channel control, make a promising combination for future technology nodes.
Author: Alain Vignes
Publisher: John Wiley & Sons
ISBN: 1394297602
Category : Technology & Engineering
Languages : en
Pages : 260
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Book Description
Silicon is the material of the digital revolution, of solar energy and of digital photography, which has revolutionized both astronomy and medical imaging. It is also the material of microelectromechanical systems (MEMS), indispensable components of smart objects. The discovery of the electronic and optoelectronic properties of germanium and silicon during the Second World War, followed by the invention of the transistor, ushered in the digital age. Although the first transistors were made from germanium, silicon eventually became the preferred material for these technologies. Silicon, From Sand to Chips 1 traces the history of the discoveries, inventions and developments in basic components and chips that these two materials enabled one after the other. The book is divided into two volumes and this first volume is devoted to basic microelectronic components.
