Author: Lado Filipovic
Publisher: MDPI
ISBN: 3039210106
Category : Technology & Engineering
Languages : en
Pages : 202
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Book Description
What is the future of CMOS? Sustaining increased transistor densities along the path of Moore's Law has become increasingly challenging with limited power budgets, interconnect bandwidths, and fabrication capabilities. In the last decade alone, transistors have undergone significant design makeovers; from planar transistors of ten years ago, technological advancements have accelerated to today's FinFETs, which hardly resemble their bulky ancestors. FinFETs could potentially take us to the 5-nm node, but what comes after it? From gate-all-around devices to single electron transistors and two-dimensional semiconductors, a torrent of research is being carried out in order to design the next transistor generation, engineer the optimal materials, improve the fabrication technology, and properly model future devices. We invite insight from investigators and scientists in the field to showcase their work in this Special Issue with research papers, short communications, and review articles that focus on trends in micro- and nanotechnology from fundamental research to applications.
Author:
Publisher: Office of Technology Assessment
ISBN:
Category : Business & Economics
Languages : en
Pages : 64
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Book Description
Author: D. Nirmal
Publisher: CRC Press
ISBN: 0429862520
Category : Science
Languages : en
Pages : 434
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Book Description
This book focusses on III-V high electron mobility transistors (HEMTs) including basic physics, material used, fabrications details, modeling, simulation, and other important aspects. It initiates by describing principle of operation, material systems and material technologies followed by description of the structure, I-V characteristics, modeling of DC and RF parameters of AlGaN/GaN HEMTs. The book also provides information about source/drain engineering, gate engineering and channel engineering techniques used to improve the DC-RF and breakdown performance of HEMTs. Finally, the book also highlights the importance of metal oxide semiconductor high electron mobility transistors (MOS-HEMT). Key Features Combines III-As/P/N HEMTs with reliability and current status in single volume Includes AC/DC modelling and (sub)millimeter wave devices with reliability analysis Covers all theoretical and experimental aspects of HEMTs Discusses AlGaN/GaN transistors Presents DC, RF and breakdown characteristics of HEMTs on various material systems using graphs and plots
Author: Geert Hellings
Publisher: Springer Science & Business Media
ISBN: 9400763409
Category : Technology & Engineering
Languages : en
Pages : 154
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Book Description
For many decades, the semiconductor industry has miniaturized transistors, delivering increased computing power to consumers at decreased cost. However, mere transistor downsizing does no longer provide the same improvements. One interesting option to further improve transistor characteristics is to use high mobility materials such as germanium and III-V materials. However, transistors have to be redesigned in order to fully benefit from these alternative materials. High Mobility and Quantum Well Transistors: Design and TCAD Simulation investigates planar bulk Germanium pFET technology in chapters 2-4, focusing on both the fabrication of such a technology and on the process and electrical TCAD simulation. Furthermore, this book shows that Quantum Well based transistors can leverage the benefits of these alternative materials, since they confine the charge carriers to the high-mobility material using a heterostructure. The design and fabrication of one particular transistor structure - the SiGe Implant-Free Quantum Well pFET – is discussed. Electrical testing shows remarkable short-channel performance and prototypes are found to be competitive with a state-of-the-art planar strained-silicon technology. High mobility channels, providing high drive current, and heterostructure confinement, providing good short-channel control, make a promising combination for future technology nodes.
Author: Defense Documentation Center (U.S.)
Publisher:
ISBN:
Category : Miniature electronic equipment
Languages : en
Pages : 180
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Book Description
Author: Sneh Saurabh
Publisher: CRC Press
ISBN: 1315350262
Category : Science
Languages : en
Pages : 216
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Book Description
During the last decade, there has been a great deal of interest in TFETs. To the best authors’ knowledge, no book on TFETs currently exists. The proposed book provides readers with fundamental understanding of the TFETs. It explains the interesting characteristics of the TFETs, pointing to their strengths and weaknesses, and describes the novel techniques that can be employed to overcome these weaknesses and improve their characteristics. Different tradeoffs that can be made in designing TFETs have also been highlighted. Further, the book provides simulation example files of TFETs that could be run using a commercial device simulator.
Author: Ram K. Gupta
Publisher: CRC Press
ISBN: 1040040926
Category : Technology & Engineering
Languages : en
Pages : 396
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Book Description
This book provides readers with state-of-the-art knowledge of established and emerging semiconducting materials, their processing, and the fabrication of chips and microprocessors. In addition to covering the fundamentals of these materials, it details the basics and workings of many semiconducting devices and their role in modern electronics and explores emerging semiconductors and their importance in future devices. • Provides readers with latest advances in semiconductors. • Covers diodes, transistors, and other devices using semiconducting materials. • Covers advances and challenges in semiconductors and their technological applications. • Discusses fundamentals and characteristics of emerging semiconductors for chip manufacturing. This book provides directions to scientists, engineers, and researchers in materials engineering and related disciplines to help them better understand the physics, characteristics, and applications of modern semiconductors.
Author:
Publisher:
ISBN:
Category : Employment forecasting
Languages : en
Pages : 824
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Book Description
Author: Swati Sharma
Publisher: Walter de Gruyter GmbH & Co KG
ISBN: 3110620707
Category : Science
Languages : en
Pages : 315
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Book Description
Micro and nano devices are an integral part of modern technology. To address the requirements of the state-of-the-art technology, topics are selected from both chip-based and flexible electronics. A wide range of carbon materials including graphene, carbon nanotube, glass-like carbon, porous carbon, carbon black, graphite, carbon nanofiber, laser-patterned carbon and heteroatom containing carbon are covered. This goal is to elucidate fundamental carbon material science along with compatible micro- and nanofabrication techniques. Real-life example of sensors, energy storage and generation devices, MEMS, NEMS and implantable bioelectronics enable visualization of the outcome of described processes. Students will also benefit from the attractive aspects of carbon science explained in simple terms. Hybridization, allotrope classification and microstructural models are presented with a whole new outlook. Discussions on less-studied, hypothetical and undiscovered carbon forms render the contents futuristic and highly appealing.
Author: Marcelo Ornaghi Orlandi
Publisher: Elsevier
ISBN: 0128162791
Category : Technology & Engineering
Languages : en
Pages : 654
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Book Description
Tin Oxide Materials: Synthesis, Properties, and Applications discusses the latest in metal oxides, an emerging area in electronic materials. As more is learned about this important materials system, more functionalities and applications have been revealed. This key reference on the topic covers important material that is ideal for materials scientists, materials engineers and materials chemists who have been introduced to metal oxides as a general category of materials, but want to take the next step and learn more about a specific material. - Provides a complete resource on tin oxide materials systems, including in-depth discussions of properties, their synthesis, modelling methods, and applications - Presents information on the well-investigated SnO2, but also includes discussions on its emerging stoichiometries, such as SnO and Sn3O4 - Includes the most relevant applications in varistors, sensing devices, fuel cells, transistors, biological studies, and much more
