Author: Sandhya Gunasekara
Publisher:
ISBN:
Category : Boron nitride
Languages : en
Pages : 196
Book Description
Microstructural Characterization of Post Ion-implanted Cubic Boron Nitride Thin Films by Transmission Electron Microscopy
Author: Sandhya Gunasekara
Publisher:
ISBN:
Category : Boron nitride
Languages : en
Pages : 196
Book Description
Publisher:
ISBN:
Category : Boron nitride
Languages : en
Pages : 196
Book Description
Microstructural Characterization of Movpe Grown Aluminum Nitride Thin Films on Silicon (111) Substrates
Author: Vivek Thummala
Publisher:
ISBN:
Category :
Languages : en
Pages : 176
Book Description
Publisher:
ISBN:
Category :
Languages : en
Pages : 176
Book Description
Advanced Techniques for Microstructural Characterization
Author: R. Krishnan
Publisher:
ISBN:
Category : Science
Languages : en
Pages : 312
Book Description
Coverage includes: metallic glasses; X-ray topography; auger spectroscopy; positron annihilation; and field ion microscopy.
Publisher:
ISBN:
Category : Science
Languages : en
Pages : 312
Book Description
Coverage includes: metallic glasses; X-ray topography; auger spectroscopy; positron annihilation; and field ion microscopy.
Ion-induced Stress Relaxation During the Growth of Cubic Boron Nitride Thin Films
Author:
Publisher:
ISBN:
Category :
Languages : en
Pages :
Book Description
The aim of the presented work was to deposit cubic boron nitride thin films by magnetron sputtering under simultaneous stress relaxation by ion implantation. An in situ instrument based on laser deflectometry on cantilever structures and in situ ellipsometry, was used for in situ stress measurements. The characteristic evolution of the instantaneous stress during the layered growth of cBN films observed in IBAD experiments, could be reproduced for magnetron sputter deposition. To achieve simultaneous stress relaxation by ion implantation, a complex bipolar pulsed substrate bias source was constructed. This power supply enables the growth of cBN thin films under low energy ion irradiation (up to 200 eV) and, for the first time, the simultaneous implantation of ions with an energy of up to 8 keV during high voltage pulses. It was demonstrated that the instantaneous stress in cBN thin films can be released down to -1.1 GPa by simultaneous ion bombardment during the high voltage pulses. A simultaneous stress relaxation during growth is possible in the total investigated ion energy range between 2.5 and 8 keV. These are the lowest ion energies reported for the stress relaxation in cBN. Since such a substrate bias power supply is easy to integrate in existing process lines, this result is important for industrial deposition of thin films, not only for cubic boron nitride films. It was found that the amount of stress relaxation depends on the number of atomic displacements (displacements per atom: dpa) that are induced by the high energy ion bombardment and is therefore dependent on the ion energy and the high energy ion flux. In practise, this means that the stress relaxation is controlled by the product of the pulse voltage and the pulse duty cycle or frequency. The cantilever bending measurements were complemented on microscopic scale by x-ray diffraction (XRD). The analysis of the cBN (111) lattice distances revealed a pronounced biaxial compressive state of stress in.
Publisher:
ISBN:
Category :
Languages : en
Pages :
Book Description
The aim of the presented work was to deposit cubic boron nitride thin films by magnetron sputtering under simultaneous stress relaxation by ion implantation. An in situ instrument based on laser deflectometry on cantilever structures and in situ ellipsometry, was used for in situ stress measurements. The characteristic evolution of the instantaneous stress during the layered growth of cBN films observed in IBAD experiments, could be reproduced for magnetron sputter deposition. To achieve simultaneous stress relaxation by ion implantation, a complex bipolar pulsed substrate bias source was constructed. This power supply enables the growth of cBN thin films under low energy ion irradiation (up to 200 eV) and, for the first time, the simultaneous implantation of ions with an energy of up to 8 keV during high voltage pulses. It was demonstrated that the instantaneous stress in cBN thin films can be released down to -1.1 GPa by simultaneous ion bombardment during the high voltage pulses. A simultaneous stress relaxation during growth is possible in the total investigated ion energy range between 2.5 and 8 keV. These are the lowest ion energies reported for the stress relaxation in cBN. Since such a substrate bias power supply is easy to integrate in existing process lines, this result is important for industrial deposition of thin films, not only for cubic boron nitride films. It was found that the amount of stress relaxation depends on the number of atomic displacements (displacements per atom: dpa) that are induced by the high energy ion bombardment and is therefore dependent on the ion energy and the high energy ion flux. In practise, this means that the stress relaxation is controlled by the product of the pulse voltage and the pulse duty cycle or frequency. The cantilever bending measurements were complemented on microscopic scale by x-ray diffraction (XRD). The analysis of the cBN (111) lattice distances revealed a pronounced biaxial compressive state of stress in.
Microstructure Analysis of Boron Nitride
Author:
Publisher:
ISBN:
Category :
Languages : en
Pages : 12
Book Description
Transmission electron microscopy and electron diffraction technique revealed boron nitride nanotube (BNNT) and nanoparticles in thin film baron nitride prepared by chemical vapor deposition method. Electron micrographs show single walled nanotubes containing these nanoparticles. Electron diffraction pattern confirms this boron nitride has a hexagonal crystal structure.
Publisher:
ISBN:
Category :
Languages : en
Pages : 12
Book Description
Transmission electron microscopy and electron diffraction technique revealed boron nitride nanotube (BNNT) and nanoparticles in thin film baron nitride prepared by chemical vapor deposition method. Electron micrographs show single walled nanotubes containing these nanoparticles. Electron diffraction pattern confirms this boron nitride has a hexagonal crystal structure.
Chemical Abstracts
Author:
Publisher:
ISBN:
Category : Chemistry
Languages : en
Pages : 2566
Book Description
Publisher:
ISBN:
Category : Chemistry
Languages : en
Pages : 2566
Book Description
Residual Stresses in Cubic Boron Nitride Thin Films Deposited by Ion-assisted Laser Ablation
Author: Gregory Frank Cardinale
Publisher:
ISBN:
Category :
Languages : en
Pages : 336
Book Description
Publisher:
ISBN:
Category :
Languages : en
Pages : 336
Book Description
Growth of Semiconducting Cubic Boron Nitride Thin Films
Author: Dmitri Litvinov
Publisher:
ISBN:
Category :
Languages : en
Pages : 220
Book Description
Publisher:
ISBN:
Category :
Languages : en
Pages : 220
Book Description
Nucleation and Growth of Ion-beam-deposited Cubic Boron Nitride Thin Films
Author: Horst Feldermann
Publisher: Cuvillier Verlag
ISBN: 9783898734202
Category : Hochschulschrift
Languages : en
Pages : 130
Book Description
Publisher: Cuvillier Verlag
ISBN: 9783898734202
Category : Hochschulschrift
Languages : en
Pages : 130
Book Description
Initial Stages of Thin Film Deposition
Author: Christopher Collazo-Davila
Publisher:
ISBN:
Category :
Languages : en
Pages :
Book Description
Finally, in-situ high energy electron bombardment and high-resolution electron microscopy are used to reveal the formation of nanoarches in hexagonal boron nitride. The nanoarch structures are shown to be possible nucleation sites for the cubic phase of boron nitride, and the growth of cubic boron nitride thin films is explained based on this new nucleation mechanism.
Publisher:
ISBN:
Category :
Languages : en
Pages :
Book Description
Finally, in-situ high energy electron bombardment and high-resolution electron microscopy are used to reveal the formation of nanoarches in hexagonal boron nitride. The nanoarch structures are shown to be possible nucleation sites for the cubic phase of boron nitride, and the growth of cubic boron nitride thin films is explained based on this new nucleation mechanism.