Materials Research Society Symposium Proceedings. Volume 746. Magnetoelectronics and Magnetic Materials - Novel Phenomena and Advanced Characterization PDF Download
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Languages : en
Pages : 0
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The papers in this volume are drawn from Symposium Q, "Magnetoelectronics-Novel Magnetic Phenomena in Nanostructures," and Symposium R, "Advanced Characterization of Artificially Structured Magnetic Materials," which were held December 1-5 at the 2002 MRS Fall Meeting in Boston, Massachusetts. The common focus of interest was on artificially engineered nanostructured magnetic systems. The two symposia discussed new phenomena in such systems that are interesting for magnetoelectronic applications, their preparation, and advanced methodology for characterization. Interest in nanomagnetism has been catalyzed by advances in two fields of research: (i) Advances in materials synthesis of structures whose length scales transcend magnetic length scales and open the possibility for creating materials with new magnetic properties. Such structures include interfaces, superlattices, tunneling devices, nanostructures, and single-molecule magnets. (ii) Advances in sample characterization techniques for nanomagnetism allow detailed exploration of structure-property relationships in nanostructured magnetic systems. The symposia reviewed current trends in both fields, and provided a forum for discussions about the outlook for further advances and new capabilities.
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Category :
Languages : en
Pages : 0
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Book Description
The papers in this volume are drawn from Symposium Q, "Magnetoelectronics-Novel Magnetic Phenomena in Nanostructures," and Symposium R, "Advanced Characterization of Artificially Structured Magnetic Materials," which were held December 1-5 at the 2002 MRS Fall Meeting in Boston, Massachusetts. The common focus of interest was on artificially engineered nanostructured magnetic systems. The two symposia discussed new phenomena in such systems that are interesting for magnetoelectronic applications, their preparation, and advanced methodology for characterization. Interest in nanomagnetism has been catalyzed by advances in two fields of research: (i) Advances in materials synthesis of structures whose length scales transcend magnetic length scales and open the possibility for creating materials with new magnetic properties. Such structures include interfaces, superlattices, tunneling devices, nanostructures, and single-molecule magnets. (ii) Advances in sample characterization techniques for nanomagnetism allow detailed exploration of structure-property relationships in nanostructured magnetic systems. The symposia reviewed current trends in both fields, and provided a forum for discussions about the outlook for further advances and new capabilities.
Author: Shufeng Zhang
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Category : Technology & Engineering
Languages : en
Pages : 306
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Book Description
This book combines the proceedings of Symposium Q, Magnetoelectronics-Novel Magnetic Phenomena in Nanostructures, and Symposium R, Advanced Characterization of Artificially Structured Magnetic Materials, both from the 2002 MRS Fall Meeting in Boston. The common focus is on artificially engineered nanostructured magnetic systems. The two symposia address new phenomena in magnetoelectronic applications, their preparation, and advanced methodology for characterization. Interest in nanomagnetism has been catalyzed by advances in two fields of research. 1) Advances in materials synthesis of structures whose length scales transcend magnetic length scales and open the possibility for creating materials with new magnetic properties. Such structures include interfaces, superlattices, tunneling devices, nanostructures, and single-molecule magnets. 2) Advances in sample characterization techniques for nano-magnetism which allow detailed exploration of structure-property relationships in nanostructured magnetic systems. The volume highlights current trends in both fields and offers an outlook for further advances and new capabilities.
Author: Mark I. Gardner
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Category : Computers
Languages : en
Pages : 408
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Book Description
Progress in MOS integrated-circuit technology is largely driven by the ability to dimensionally scale the constituent components of individual devices and their associated interconnections. Given a set of materials with fixed properties, this scaling is finite and its predicted limits are rapidly approaching. The International Technology Roadmap for Semiconductors establishes the pace at which this scaling occurs and identifies many of the technological challenges ahead. This volume assembles representatives from the fields of materials science, physics, electrical and chemical engineering to provide an insightful review of current technology and understanding. Specifically, the intent is to discuss materials issues stemming from device scaling to sub-100nm technology nodes. Topics include: high-k characterization; atomic layer deposition; gate metal materials and integration; contacts and ultrashallow junction formation; theory and modeling and crystalline oxides for gate dielectrics.
Author: Materials Research Society. Meeting
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ISBN:
Category : Science
Languages : en
Pages : 320
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The MRS Symposium Proceeding series is an internationally recognised reference suitable for researchers and practitioners. This 2003 volume focuses on experimentally validated multiscale modeling of ductile metals and alloys.
Author: M. Á. Alario-Franco
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ISBN:
Category : Science
Languages : en
Pages : 512
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Book Description
Since its inception in the mid-twentieth century, solid-state chemistry has matured within the chemical sciences. In the same way that chemistry itself is considered a central science, solid-state chemistry is central in its many relations to physics, in particular to solid-state physics and also to materials science and engineering. There are few problems in materials science or engineering in which the preparation of the material itself is not a central issue and, more often than not, this will be a solid-state chemical problem. For these reasons, it is not surprising that in the technological development of the last century, solid-state chemistry has grown in importance. It is not only a synthesis science, it is also the science of structures, defects, stoichiometry, and physical chemical properties. Most of these are explored in the book. Topics include: metal-to-insulator transition; porous materials; dielectric materials; nanomaterials; synthesis of materials; films and catalytic materials; CMR materials; thermoelectric materials; dielectrics, catalysts, phosphors, films and properties and synthesis and crystal growth.
Author: D. G. Schlom
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Category : Technology & Engineering
Languages : en
Pages : 408
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Book Description
This book contains the proceedings of two symposia held at the 2002 MRS Fall Meeting in Boston. Papers from Symposium T, Crystalline Oxides on Semiconductors, bring together experts from different technology areas - high-k gate dielectrics, novel memories, and ferroelectrics, for example - to examine commonality among the fields. These papers offer an overview of the field, highlight interesting experimental results and device ideas, and feature innovative theoretical approaches to understanding these systems. Symposium V, Interfacial Issues for Oxide-Based Electronics, covers a wide range of topics involving the interfaces between electro-optical oxide layers and other materials. Overall, it is clear that a new generation of materials and heterostructures has been enabled by the increasing control of interfacial phenomena. Topics include: epitaxial oxide-silicon heterostructures; ferroelectric thin films on silicon; theory and modeling; crystalline oxides for gate dielectrics; transparent conducting oxides; transparent conducting oxides and oxide growth and properties; field effect devices and gate dielectrics; ferroelectrics, capacitors and sensors; organic devices and interfacial growth issues.
Author: Philippe Knauth
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ISBN:
Category : Technology & Engineering
Languages : en
Pages : 608
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Book Description
The MRS Symposium Proceeding series is an internationally recognised reference suitable for researchers and practitioners.
Author: Materials Research Society. Meeting
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ISBN:
Category : Science
Languages : en
Pages : 900
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Book Description
This year's nitride symposium showed the scope of nitride-related advances spanning basic materials physics over process technology to high-performance devices. Progress was reported in bulk growth of GaN and AlN, growth on various substrates and substrate orientations, optical properties of InN, defect and doping analysis of p-doped GaN, and polarization properties. These led to new performance records in visible light emitter technology, i.e., higher efficiency/higher brightness, UV emitters with shorter wavelength, and UV and photo detectors. Advances in the development of nitride-based electronic devices with new heterostructure FET designs for RF power applications, including those on Si substrates and wafer fusion, are also reported. This book captures the exciting developments in this rapidly progressing field. Topics include: epitaxy - devices and defect reduction; defects and characterization; epitaxy - nonpolar orientations and alloys; optical properties; UV emitters and detectors; visible light emitters; electronic devices; characterization of defects and transport; and contacts, processing and p-type nitrides.
Author: Materials Research Society. Meeting
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ISBN:
Category : Computers
Languages : en
Pages : 336
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Book Description
In the future, because fundamental materials and process limits are being approached, continued transistor scaling will not be as straightforward. Future complementary metal-oxide semiconductor (MOS) transistors will require high-permittivity (high-k) gate dielectrics and metal gate electrodes, as well as low-resistance ultrashallow junctions, in order to meet the stringent specifications of the International Technology Roadmap for Semiconductors. Techniques to improve transconductance and drive current may also be required. Process integration issues must be solved, and reliability must be assured, before any new material or processing technique can be used in IC manufacture. A further complication is that the key challenges will differ according to application. This book reports research results from industry, government labs and academia covering a wide scope of front-end process issues for future CMOS technologies. Topics include: advanced materials and structures; high-k dielectrics; advanced gate stack materials; heterogeneous integration and strained Si technologies; ultrashallow junction technology; strained Si and source/drain technology; and laser annealing and silicide processes.
Author: Materials Research Society. Meeting
Publisher:
ISBN:
Category : Technology & Engineering
Languages : en
Pages : 268
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Book Description
Elemental semiconductors feature fundamental advantages when compared to II-VI and III-V compounds. This is best illustrated by the success of silicon technology and also by the superior purity of germanium and (MOCVD) diamond. However, in contrast to electronic, the optical properties of these materials are inferior, and therefore, their applications remain electronic rather than photonic. Nevertheless, an effort toward optoelectronics continues. In the case of silicon and silicon-based media, this is motivated by the almost unlimited possibilities offered by VLSI technology. Among other methods, quantum confinement in low-dimensional structures, optical doping, development of inhomogeneous media, and applications of microcavities are being vigorously explored as ways to improve emission. When brought to maturity, these approaches could lead to widespread applications ranging from telecommunications to chemical and biological sensing. For silicon, a full on-chip integration of electronic and photonic elements could be realized. This volume brings together researchers from academic, industry and government laboratories around the world to review progress in the field, identify the most promising targets, point out possible bottlenecks and assess future perspectives. A cross-fertilization of ideas from the fields of materials science, spectroscopy, solid-state physics and chemistry, as well as device physics, are presented.
