Materials Research Society Symposium Proceedings. Volume 743. GaN and Related Alloys - 2002 PDF Download
Are you looking for read ebook online? Search for your book and save it on your Kindle device, PC, phones or tablets. Download Materials Research Society Symposium Proceedings. Volume 743. GaN and Related Alloys - 2002 PDF full book. Access full book title Materials Research Society Symposium Proceedings. Volume 743. GaN and Related Alloys - 2002 by . Download full books in PDF and EPUB format.
Author:
Publisher:
ISBN:
Category :
Languages : en
Pages : 0
Get Book Here
Book Description
Symposium L, "GaN and Related Alloys-2002," was held December 2-6 at the 2002 MRS Fall Meeting in Boston, Massachusetts During nine half-day oral sessions, nine invited talks and 53 contributed talks were given in three poster sessions, 161 posters were presented. This year's nitride symposium again was characterized by a wide scope of nitride related advances spanning from basic materials physics over process technology to high performance devices. Strong development was reported in bulk growth of GaN and AIN, growth on various substrates and substrate orientations, optical properties of InN, defect and doping analysis of p-doped GaN, and full consideration of polarization properties. These led to new performance records in visible light emitter technology, i.e., higher efficiency/higher brightness, UV emitters with shorter wavelength, and UV and photo detectors. A strong development is also seen in nitride-based electronic devices with new heterostructure FET designs for RF power applications including such on Si substrates and wafer fusion. These symposium proceedings capture a crosscut of the exciting developments in this rapidly progressing and commercializing field. This volume will be useful for researchers working in the field of nitrides, and for students who seek entry into the subject.
Author:
Publisher:
ISBN:
Category :
Languages : en
Pages : 0
Get Book Here
Book Description
Symposium L, "GaN and Related Alloys-2002," was held December 2-6 at the 2002 MRS Fall Meeting in Boston, Massachusetts During nine half-day oral sessions, nine invited talks and 53 contributed talks were given in three poster sessions, 161 posters were presented. This year's nitride symposium again was characterized by a wide scope of nitride related advances spanning from basic materials physics over process technology to high performance devices. Strong development was reported in bulk growth of GaN and AIN, growth on various substrates and substrate orientations, optical properties of InN, defect and doping analysis of p-doped GaN, and full consideration of polarization properties. These led to new performance records in visible light emitter technology, i.e., higher efficiency/higher brightness, UV emitters with shorter wavelength, and UV and photo detectors. A strong development is also seen in nitride-based electronic devices with new heterostructure FET designs for RF power applications including such on Si substrates and wafer fusion. These symposium proceedings capture a crosscut of the exciting developments in this rapidly progressing and commercializing field. This volume will be useful for researchers working in the field of nitrides, and for students who seek entry into the subject.
Author:
Publisher:
ISBN:
Category :
Languages : en
Pages : 861
Get Book Here
Book Description
Symposium L, "GaN and Related Alloys-2002," was held December 2-6 at the 2002 MRS Fall Meeting in Boston, Massachusetts. During nine half-day oral sessions, nine invited talks and 55 contributed talks were given. In three poster sessions, 161 posters were presented. This year's nitride symposium again was characterized by a wide scope of nitride related advances spanning from basic materials physics over process technology to high performance devices. Strong development was reported in bulk growth of GaN and AIN, growth on various substrates and substrate orientations, optical properties of InN, defect and doping analysis of p-doped GaN, and full consideration of polarization properties. These led to new performance records in visible light emitter technology, i.e., higher efficiency/ higher brightness, UV emitters with shorter wavelength, and UV and photo detectors. A strong development is also seen in nitride-based electronic devices with new heterostructure FET designs for RF power applications including such on Si substrates and wafer fusion. These symposium proceedings capture a crosscut of the exciting developments in this rapidly progressing and commercializing field. This volume will be useful for researchers working in the field of nitrides, and for students who seek entry into the subject.
Author: Materials Research Society. Meeting
Publisher:
ISBN:
Category : Science
Languages : en
Pages : 900
Get Book Here
Book Description
This year's nitride symposium showed the scope of nitride-related advances spanning basic materials physics over process technology to high-performance devices. Progress was reported in bulk growth of GaN and AlN, growth on various substrates and substrate orientations, optical properties of InN, defect and doping analysis of p-doped GaN, and polarization properties. These led to new performance records in visible light emitter technology, i.e., higher efficiency/higher brightness, UV emitters with shorter wavelength, and UV and photo detectors. Advances in the development of nitride-based electronic devices with new heterostructure FET designs for RF power applications, including those on Si substrates and wafer fusion, are also reported. This book captures the exciting developments in this rapidly progressing field. Topics include: epitaxy - devices and defect reduction; defects and characterization; epitaxy - nonpolar orientations and alloys; optical properties; UV emitters and detectors; visible light emitters; electronic devices; characterization of defects and transport; and contacts, processing and p-type nitrides.
Author:
Publisher:
ISBN:
Category : Electroluminescent devices
Languages : en
Pages : 896
Get Book Here
Book Description
Author: Philippe Knauth
Publisher:
ISBN:
Category : Technology & Engineering
Languages : en
Pages : 608
Get Book Here
Book Description
The MRS Symposium Proceeding series is an internationally recognised reference suitable for researchers and practitioners.
Author: Materials Research Society. Meeting
Publisher:
ISBN:
Category : Technology & Engineering
Languages : en
Pages : 376
Get Book Here
Book Description
The objective of this 2003 volume from the Materials Research Society is twofold - to provide an overview of advances in membrane science and technology and to enhance communication among membrane researchers from a variety of disciplines including chemistry, biology, biotechnology, chemical engineering and materials science. Membranes can be used for inert or reactive separations in a variety of fields including gas purification, water treatment, energy storage and conversion, bio-technology and biomedicine. The book brings together scientists involved in the entire spectrum of modern approaches to membrane science and technology to address synthesis, characterization and transport properties and their use in established and emerging applications. Topics include: membrane synthesis and preparation; surface modification and additives; hybrid and composite membranes; membrane characterization; transport phenomena in membranes; charged membranes and ion transfer; gas permeation and separation; pervaporation and vapor permeation; dense membranes for hydrogen separation; applications in biotechnology and biomedicine; and membrane R&D for industrial and emerging applications.
Author: Stephen E. Saddow
Publisher:
ISBN:
Category : Technology & Engineering
Languages : en
Pages : 432
Get Book Here
Book Description
Advances in silicon carbide materials, processing and device design have recently resulted in implementation of SiC-based electronic systems and offer great promise in high-voltage, high-temperature and high-frequency applications. This volume focuses on new developments in basic science of SiC materials as well as rapidly maturing device technologies. The challenges in this field include understanding and decreasing defect densities in bulk SiC crystals, controlling morphology and residual impurities in epilayers, optimization of implant activation and oxide-SiC interfaces, and developing novel device structures. This book brings together the crystal growers, physicists and device experts needed to continue the rapid pace of silicon-carbide-based technology. Topics include: epitaxial growth; characterization/defects; MOS technology; SiC processing and devices.
Author: D. G. Schlom
Publisher:
ISBN:
Category : Technology & Engineering
Languages : en
Pages : 408
Get Book Here
Book Description
This book contains the proceedings of two symposia held at the 2002 MRS Fall Meeting in Boston. Papers from Symposium T, Crystalline Oxides on Semiconductors, bring together experts from different technology areas - high-k gate dielectrics, novel memories, and ferroelectrics, for example - to examine commonality among the fields. These papers offer an overview of the field, highlight interesting experimental results and device ideas, and feature innovative theoretical approaches to understanding these systems. Symposium V, Interfacial Issues for Oxide-Based Electronics, covers a wide range of topics involving the interfaces between electro-optical oxide layers and other materials. Overall, it is clear that a new generation of materials and heterostructures has been enabled by the increasing control of interfacial phenomena. Topics include: epitaxial oxide-silicon heterostructures; ferroelectric thin films on silicon; theory and modeling; crystalline oxides for gate dielectrics; transparent conducting oxides; transparent conducting oxides and oxide growth and properties; field effect devices and gate dielectrics; ferroelectrics, capacitors and sensors; organic devices and interfacial growth issues.
Author: H. M. Ng
Publisher: The Electrochemical Society
ISBN: 9781566774192
Category : Technology & Engineering
Languages : en
Pages : 616
Get Book Here
Book Description
Author: Mark I. Gardner
Publisher:
ISBN:
Category : Computers
Languages : en
Pages : 408
Get Book Here
Book Description
Progress in MOS integrated-circuit technology is largely driven by the ability to dimensionally scale the constituent components of individual devices and their associated interconnections. Given a set of materials with fixed properties, this scaling is finite and its predicted limits are rapidly approaching. The International Technology Roadmap for Semiconductors establishes the pace at which this scaling occurs and identifies many of the technological challenges ahead. This volume assembles representatives from the fields of materials science, physics, electrical and chemical engineering to provide an insightful review of current technology and understanding. Specifically, the intent is to discuss materials issues stemming from device scaling to sub-100nm technology nodes. Topics include: high-k characterization; atomic layer deposition; gate metal materials and integration; contacts and ultrashallow junction formation; theory and modeling and crystalline oxides for gate dielectrics.
