Materials, Processes, Integration and Reliability in Advanced Interconnects for Micro- and Nanoelectronics: Volume 990

Materials, Processes, Integration and Reliability in Advanced Interconnects for Micro- and Nanoelectronics: Volume 990 PDF Author: Qinghuang Lin
Publisher: Cambridge University Press
ISBN: 9781107408715
Category : Technology & Engineering
Languages : en
Pages : 358

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Book Description
In 2004, the microelectronics industry quietly ushered in the Nanoelectronics Era with the mass production of sub-100nm node devices. The current leading-edge semiconductor chips in mass production - the so-called 90nm node devices - have a transistor gate length of less than 50nm. This rapid technological advancement in the semiconductor industry has been made possible by innovations in materials employed in both transistor fabrication (front-end-of-the-line, FEOL) and interconnect fabrication (back-end-of-the-line, BEOL). The 90nm node BEOL features copper (Cu) interconnects and dielectric materials with a low-dielectric constant (k) of about 3.0. However, for the next generations of 65nm node and beyond, evolutionary and revolutionary innovations in BEOL materials and processes are needed to fuel the continued, healthy growth of the semiconductor. This book provides a forum to exchange advances in materials, processes, integration, and reliability in advanced interconnects and packaging. The book also addresses interconnects for emerging technologies, including 3D chip stacking and optical interconnects, as well as interconnects for optoelectronics, plastic electronics and molecular electronics.

Materials, Processes, Integration and Reliability in Advanced Interconnects for Micro- and Nanoelectronics: Volume 990

Materials, Processes, Integration and Reliability in Advanced Interconnects for Micro- and Nanoelectronics: Volume 990 PDF Author: Qinghuang Lin
Publisher: Cambridge University Press
ISBN: 9781107408715
Category : Technology & Engineering
Languages : en
Pages : 358

Get Book

Book Description
In 2004, the microelectronics industry quietly ushered in the Nanoelectronics Era with the mass production of sub-100nm node devices. The current leading-edge semiconductor chips in mass production - the so-called 90nm node devices - have a transistor gate length of less than 50nm. This rapid technological advancement in the semiconductor industry has been made possible by innovations in materials employed in both transistor fabrication (front-end-of-the-line, FEOL) and interconnect fabrication (back-end-of-the-line, BEOL). The 90nm node BEOL features copper (Cu) interconnects and dielectric materials with a low-dielectric constant (k) of about 3.0. However, for the next generations of 65nm node and beyond, evolutionary and revolutionary innovations in BEOL materials and processes are needed to fuel the continued, healthy growth of the semiconductor. This book provides a forum to exchange advances in materials, processes, integration, and reliability in advanced interconnects and packaging. The book also addresses interconnects for emerging technologies, including 3D chip stacking and optical interconnects, as well as interconnects for optoelectronics, plastic electronics and molecular electronics.

Materials, Processes, Integration and Reliability in Advanced Interconnects for Micro- and Nanoelectronics: Volume 990

Materials, Processes, Integration and Reliability in Advanced Interconnects for Micro- and Nanoelectronics: Volume 990 PDF Author: Qinghuang Lin
Publisher:
ISBN:
Category : Science
Languages : en
Pages : 366

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Book Description
The MRS Symposium Proceeding series is an internationally recognised reference suitable for researchers and practitioners.

Materials, Processes, and Reliability for Advanced Interconnects for Micro- and Nanoelectronics - 2011: Volume 1335

Materials, Processes, and Reliability for Advanced Interconnects for Micro- and Nanoelectronics - 2011: Volume 1335 PDF Author: Mikhail R. Baklanov
Publisher: Materials Research Society
ISBN: 9781605113128
Category : Technology & Engineering
Languages : en
Pages : 0

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Book Description
This volume includes selected papers based on the presentations given at Symposium O, "Materials, Processes, and Reliability for Advanced Interconnects for Micro- and Nanoelectronics," held at the April 25−29, 2011 MRS Spring Meeting in San Francisco, California. The symposium included topics relating to low-k dielectrics, integration, reliability, metallization, packaging and emerging technologies.

Materials, Processes and Reliability for Advanced Interconnects for Micro- and Nanoelectronics - 2009:

Materials, Processes and Reliability for Advanced Interconnects for Micro- and Nanoelectronics - 2009: PDF Author: Martin Gall
Publisher: Cambridge University Press
ISBN: 9781107408319
Category : Technology & Engineering
Languages : en
Pages : 204

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Book Description
Enabled by the development and introduction of new materials, the semiconductor industry continues to follow Moore's law into 32nm and 22nm technologies. Advanced interconnect structures require the use of porous dielectrics with further reduced k-values and even weaker mechanical properties, as well as much thinner metallization liners. In addition, the increasing resistivity of Cu at decreasing dimensions must be addressed in order to maintain the performance of continuously shrinking devices. To deal with these issues, and to maintain the reliability of the interconnects, innovations in materials, processes and architectures are needed. This book brings together researchers from around the world to exchange the latest advances in materials, processes, integration and reliability in advanced interconnects and packaging, and to discuss interconnects for emerging technologies. Papers from a joint session with Symposium F, Packaging, Chip-Package Interactions and Solder Materials Challenges, are also included and focus on 3D chip stacking and molecular electronics.

Advanced Interconnects for Micro- and Nanoelectronics

Advanced Interconnects for Micro- and Nanoelectronics PDF Author: E. Kondoh
Publisher:
ISBN: 9781632661418
Category : Microelectronics
Languages : en
Pages : 133

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Book Description


Materials, Processes, and Reliability for Advanced Interconnects for Micro- and Nanoelectronics--2011

Materials, Processes, and Reliability for Advanced Interconnects for Micro- and Nanoelectronics--2011 PDF Author:
Publisher:
ISBN:
Category : Integrated circuits
Languages : en
Pages : 127

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Book Description


Semiconductor Defect Engineering: Volume 994

Semiconductor Defect Engineering: Volume 994 PDF Author: S. Ashok
Publisher:
ISBN:
Category : Technology & Engineering
Languages : en
Pages : 400

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Book Description
The MRS Symposium Proceeding series is an internationally recognised reference suitable for researchers and practitioners. This book, first published in 2007, focuses on the application of defects and impurities in current and emerging semiconductor technologies.

Ion-Beam-Based Nanofabrication: Volume 1020

Ion-Beam-Based Nanofabrication: Volume 1020 PDF Author: Daryush Ila
Publisher:
ISBN:
Category : Science
Languages : en
Pages : 264

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Book Description
The MRS Symposium Proceeding series is an internationally recognised reference suitable for researchers and practitioners.

Semiconductor Defect Engineering: Volume 994

Semiconductor Defect Engineering: Volume 994 PDF Author: S. Ashok
Publisher: Cambridge University Press
ISBN: 9781558999541
Category : Technology & Engineering
Languages : en
Pages : 392

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Book Description
This book, first published in 2007, focuses on the application of defects and impurities in current and emerging semiconductor technologies. The role of defects in the evolution of semiconductor technology is now recognized as one of refined control - in density, properties, spatial location, and perhaps even temporal variation during device operating lifetime. The concept of defect engineering has found numerous applications in the fabrication of semiconductors and devices with improved and/or new properties, and new trends extend defect engineering in structures with nm dimensions. This book shows interaction among researchers pursing effective use of defect incorporation and control at various facets of technology and widely different semiconductor materials systems. Topics include: dopant and defect issues in oxide and nitride semiconductors; defect properties, activation and passivation; defects in nanostructures and organic semiconductors; ion implantation and beam processing; defect characterization; heterojunctions and interfaces; process-induced defects; dopants and defects in group-IV semiconductors and defects in devices.

Organic/Inorganic Hybrid Materials - 2007: Volume 1007

Organic/Inorganic Hybrid Materials - 2007: Volume 1007 PDF Author: Christophe Barbé
Publisher:
ISBN:
Category : Technology & Engineering
Languages : en
Pages : 344

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Book Description
The field of organic/inorganic hybrids has evolved significantly, providing materials with increasing architectural complexities and functionalities. Scientists involved in this field are gradually moving from building materials using a classical molecular approach (e.g. polymerization) to assembling materials on the nanoscale, using a variety of innovative strategies which can vary from the assembly of DNA motifs, to the formation of mesoporous materials by spinodal decomposition, or the use of nanoparticles or oxoclusters as nanobuilding blocks for building complex structures such as nacre-like transition metal oxides. This precise control over the materials architecture also adds functionality to the hybrid materials, whether it is for designing special membranes for phase separation and chromatography or thin films for photonic or magnetic applications. This book presents contributions from researchers worldwide and discusses organosiloxane-based materials; mesoporous materials and films; layered materials; surface and interface modification and characterization; controlled release and biological applications; nanoparticles synthesis and assembly; nanocomposites and new concepts.