Author: Stanislaus Johannes Cornelis Henricus Maria Gisbergen
Publisher:
ISBN:
Category :
Languages : en
Pages : 141
Book Description
Magnetic Resonance Studies of 3d Transition Metal Impurities in Compound Semiconductors
Author: Stanislaus Johannes Cornelis Henricus Maria Gisbergen
Publisher:
ISBN:
Category :
Languages : en
Pages : 141
Book Description
Publisher:
ISBN:
Category :
Languages : en
Pages : 141
Book Description
Magnetic resonance studies of 3d transition metal imputities in compound semiconductors
Author: Stanislaus Johannes Cornelis Henricus Maria van Gisbergen
Publisher:
ISBN:
Category :
Languages : nl
Pages : 141
Book Description
Publisher:
ISBN:
Category :
Languages : nl
Pages : 141
Book Description
Magnetic Resonance Studies of 3d Transition Metal Impurities in Compound Semiconductors
Author: van Gisbergen (S.J.C.H.M.)
Publisher:
ISBN:
Category :
Languages : en
Pages : 141
Book Description
Publisher:
ISBN:
Category :
Languages : en
Pages : 141
Book Description
Transition Metal Impurities In Semiconductors
Author: Victor N Fleurov
Publisher: World Scientific
ISBN: 9814501603
Category : Science
Languages : en
Pages : 361
Book Description
This book discusses the theory of the electron states of transition metal impurities in semiconductors in connection with the general theory of isoelectronic impurities. It contains brief descriptions of the experimental data available for transition metal impurities belonging to iron, palladium and platinum groups and for rare-earth impurities in elemental semiconductors (III-IV, II-VI and IV-VI compounds) and in several oxide compounds (TiO2, BaTiO3, SrTiO3). Also included are applications of the theory to the optical, electrical and resonance properties of semiconductors doped by the transition metal impurities.The book presents a theory unifying previously proposed ligand-field and band descriptions of transition metal impurities. It describes the theory in the context of the general theory of neutral impurities in semiconductors and demonstrates the capabilities of this description to explain the basic experimental properties of semiconductors doped by transition metal impurities. A detailed discussion of various experimental results and their theoretical interpretation is carried out.This book comprises three parts. The first two parts consider several exactly solvable models and describe numerical techniques. All the models and simulations constitute a general pattern describing transition metal and rare-earth impurities in semiconductors. The final part uses this theory in order to address various experimentally observed properties of these systems.
Publisher: World Scientific
ISBN: 9814501603
Category : Science
Languages : en
Pages : 361
Book Description
This book discusses the theory of the electron states of transition metal impurities in semiconductors in connection with the general theory of isoelectronic impurities. It contains brief descriptions of the experimental data available for transition metal impurities belonging to iron, palladium and platinum groups and for rare-earth impurities in elemental semiconductors (III-IV, II-VI and IV-VI compounds) and in several oxide compounds (TiO2, BaTiO3, SrTiO3). Also included are applications of the theory to the optical, electrical and resonance properties of semiconductors doped by the transition metal impurities.The book presents a theory unifying previously proposed ligand-field and band descriptions of transition metal impurities. It describes the theory in the context of the general theory of neutral impurities in semiconductors and demonstrates the capabilities of this description to explain the basic experimental properties of semiconductors doped by transition metal impurities. A detailed discussion of various experimental results and their theoretical interpretation is carried out.This book comprises three parts. The first two parts consider several exactly solvable models and describe numerical techniques. All the models and simulations constitute a general pattern describing transition metal and rare-earth impurities in semiconductors. The final part uses this theory in order to address various experimentally observed properties of these systems.
Transition Metal Impurities in Semiconductors,
Author: Ėrazm Mikhaĭlovich Omelʹi︠a︡novskiĭ
Publisher: CRC Press
ISBN:
Category : Doped semiconductors
Languages : en
Pages : 262
Book Description
The study of impurities and defects in semiconductors is of fundamental interest and is important for technological applications. This monograph is a first attempt to generalise experimental data and theoretical interpretation about the nature and behaviour of impurity atoms of transition metals in semiconductors. The nature of impurities and changes in their electronic structure are analysed. The molecualr orbital approach is followed extensively in the theoretical interpretation, with particular emphasis on crystal field splitting, electron paramagnetic resonance and optical absorption spectoscopies. Coverage of experimental data is extensive with more the 300 references to the literature. This is a translation of a Russian text published in 1983. The authors have updated the content for the English language edition. This book will be of interest to scientists and engineers in solid state physics and chemistry, materials science and electronic engineering. It should also be useful for postgraduate students in these fields.
Publisher: CRC Press
ISBN:
Category : Doped semiconductors
Languages : en
Pages : 262
Book Description
The study of impurities and defects in semiconductors is of fundamental interest and is important for technological applications. This monograph is a first attempt to generalise experimental data and theoretical interpretation about the nature and behaviour of impurity atoms of transition metals in semiconductors. The nature of impurities and changes in their electronic structure are analysed. The molecualr orbital approach is followed extensively in the theoretical interpretation, with particular emphasis on crystal field splitting, electron paramagnetic resonance and optical absorption spectoscopies. Coverage of experimental data is extensive with more the 300 references to the literature. This is a translation of a Russian text published in 1983. The authors have updated the content for the English language edition. This book will be of interest to scientists and engineers in solid state physics and chemistry, materials science and electronic engineering. It should also be useful for postgraduate students in these fields.
Scientific and Technical Aerospace Reports
Author:
Publisher:
ISBN:
Category : Aeronautics
Languages : en
Pages : 702
Book Description
Publisher:
ISBN:
Category : Aeronautics
Languages : en
Pages : 702
Book Description
Electronic Structure and Magnetism of 3d-Transition Metal Pnictides
Author: Kazuko Motizuki
Publisher: Springer Science & Business Media
ISBN: 3642034209
Category : Technology & Engineering
Languages : en
Pages : 142
Book Description
This book on the magnetic properties of 3d-transition metal compounds focuses on 3d-metal pnictides. It couples experimental data with phenomenological discussions and explores how certain behaviors can be explained based on an itinerant electron picture.
Publisher: Springer Science & Business Media
ISBN: 3642034209
Category : Technology & Engineering
Languages : en
Pages : 142
Book Description
This book on the magnetic properties of 3d-transition metal compounds focuses on 3d-metal pnictides. It couples experimental data with phenomenological discussions and explores how certain behaviors can be explained based on an itinerant electron picture.
Proceedings of the 16th International Conference on Defects in Semiconductors
Author: Gordon Davies
Publisher:
ISBN:
Category : Semiconductors
Languages : en
Pages : 572
Book Description
Publisher:
ISBN:
Category : Semiconductors
Languages : en
Pages : 572
Book Description
III-Nitride Semiconductors
Author: M.O. Manasreh
Publisher: Elsevier
ISBN: 0080534449
Category : Science
Languages : en
Pages : 463
Book Description
Research advances in III-nitride semiconductor materials and device have led to an exponential increase in activity directed towards electronic and optoelectronic applications. There is also great scientific interest in this class of materials because they appear to form the first semiconductor system in which extended defects do not severely affect the optical properties of devices. The volume consists of chapters written by a number of leading researchers in nitride materials and device technology with the emphasis on the dopants incorporations, impurities identifications, defects engineering, defects characterization, ion implantation, irradiation-induced defects, residual stress, structural defects and phonon confinement. This unique volume provides a comprehensive review and introduction of defects and structural properties of GaN and related compounds for newcomers to the field and stimulus to further advances for experienced researchers. Given the current level of interest and research activity directed towards nitride materials and devices, the publication of the volume is particularly timely. Early pioneering work by Pankove and co-workers in the 1970s yielded a metal-insulator-semiconductor GaN light-emitting diode (LED), but the difficulty of producing p-type GaN precluded much further effort. The current level of activity in nitride semiconductors was inspired largely by the results of Akasaki and co-workers and of Nakamura and co-workers in the late 1980s and early 1990s in the development of p-type doping in GaN and the demonstration of nitride-based LEDs at visible wavelengths. These advances were followed by the successful fabrication and commercialization of nitride blue laser diodes by Nakamura et al at Nichia. The chapters contained in this volume constitutes a mere sampling of the broad range of research on nitride semiconductor materials and defect issues currently being pursued in academic, government, and industrial laboratories worldwide.
Publisher: Elsevier
ISBN: 0080534449
Category : Science
Languages : en
Pages : 463
Book Description
Research advances in III-nitride semiconductor materials and device have led to an exponential increase in activity directed towards electronic and optoelectronic applications. There is also great scientific interest in this class of materials because they appear to form the first semiconductor system in which extended defects do not severely affect the optical properties of devices. The volume consists of chapters written by a number of leading researchers in nitride materials and device technology with the emphasis on the dopants incorporations, impurities identifications, defects engineering, defects characterization, ion implantation, irradiation-induced defects, residual stress, structural defects and phonon confinement. This unique volume provides a comprehensive review and introduction of defects and structural properties of GaN and related compounds for newcomers to the field and stimulus to further advances for experienced researchers. Given the current level of interest and research activity directed towards nitride materials and devices, the publication of the volume is particularly timely. Early pioneering work by Pankove and co-workers in the 1970s yielded a metal-insulator-semiconductor GaN light-emitting diode (LED), but the difficulty of producing p-type GaN precluded much further effort. The current level of activity in nitride semiconductors was inspired largely by the results of Akasaki and co-workers and of Nakamura and co-workers in the late 1980s and early 1990s in the development of p-type doping in GaN and the demonstration of nitride-based LEDs at visible wavelengths. These advances were followed by the successful fabrication and commercialization of nitride blue laser diodes by Nakamura et al at Nichia. The chapters contained in this volume constitutes a mere sampling of the broad range of research on nitride semiconductor materials and defect issues currently being pursued in academic, government, and industrial laboratories worldwide.
Advances in Electronics and Electron Physics
Author:
Publisher: Academic Press
ISBN: 0080577237
Category : Computers
Languages : en
Pages : 429
Book Description
Advances in Electronics and Electron Physics
Publisher: Academic Press
ISBN: 0080577237
Category : Computers
Languages : en
Pages : 429
Book Description
Advances in Electronics and Electron Physics