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Author: Matthew Mark Sztelle
Publisher:
ISBN: 9780549911173
Category :
Languages : en
Pages : 140
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Book Description
A technique for providing low-temperature, nanometer scale, selective silicon epitaxy using the hydrogen-passivated silicon surface as a lithographic mask has been developed. The STM tip is used to define chemically reactive templates on the monohydride Si(100) surface at temperatures below the monohydride desorption peak, 540 °C. Disilane gas is used to deposit silicon and silicon-hydride species on the exposed clean silicon. For low temperatures (177 °C) or high disilane pressures (1.0x10-8 Torr) the STM tip can be used to remove hydrogen, allowing epitaxy to occur and a fresh silicon surface to be exposed. Repeating this cycle promotes epitaxial growth. At higher temperatures (>177 °C) and lower disilane pressures (≤2.5x10 -9 Torr) short-clean silicon islands form without requiring the STM tip to remove hydrogen in the patterned regions at temperatures below the dihydride desorption peak, 425 °C, thereby adding a processing variable. At sufficient temperatures (310 °C), silicon field-evaporated from the tip may form into an epitaxial film; using this technique, a bilayer of epitaxial growth is demonstrated. The STM tip is used to modify the edges of this structure through the hydrogen removal and selective deposition technique. Also discussed will be the reasonable temperature limits for pattern fidelity.
Author: Matthew Mark Sztelle
Publisher:
ISBN: 9780549911173
Category :
Languages : en
Pages : 140
Get Book Here
Book Description
A technique for providing low-temperature, nanometer scale, selective silicon epitaxy using the hydrogen-passivated silicon surface as a lithographic mask has been developed. The STM tip is used to define chemically reactive templates on the monohydride Si(100) surface at temperatures below the monohydride desorption peak, 540 °C. Disilane gas is used to deposit silicon and silicon-hydride species on the exposed clean silicon. For low temperatures (177 °C) or high disilane pressures (1.0x10-8 Torr) the STM tip can be used to remove hydrogen, allowing epitaxy to occur and a fresh silicon surface to be exposed. Repeating this cycle promotes epitaxial growth. At higher temperatures (>177 °C) and lower disilane pressures (≤2.5x10 -9 Torr) short-clean silicon islands form without requiring the STM tip to remove hydrogen in the patterned regions at temperatures below the dihydride desorption peak, 425 °C, thereby adding a processing variable. At sufficient temperatures (310 °C), silicon field-evaporated from the tip may form into an epitaxial film; using this technique, a bilayer of epitaxial growth is demonstrated. The STM tip is used to modify the edges of this structure through the hydrogen removal and selective deposition technique. Also discussed will be the reasonable temperature limits for pattern fidelity.
Author: Ibrahim Ban
Publisher:
ISBN:
Category : Epitaxy
Languages : en
Pages : 618
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Book Description
Author: Jen-Chung Lou
Publisher:
ISBN:
Category :
Languages : en
Pages : 392
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Book Description
Author: Katherine Elizabeth Violette
Publisher:
ISBN:
Category :
Languages : en
Pages : 502
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Book Description
Author: Tri-Rung Yew
Publisher:
ISBN:
Category :
Languages : en
Pages : 420
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Book Description
Author:
Publisher: Elsevier
ISBN: 0080541003
Category : Science
Languages : en
Pages : 514
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Book Description
Since its inception in 1966, the series of numbered volumes known as Semiconductors and Semimetals has distinguished itself through the careful selection of well-known authors, editors, and contributors. The Willardson and Beer series, as it is widely known, has succeeded in producing numerous landmark volumes and chapters. Not only did many of these volumes make an impact at the time of their publication, but they continue to be well-cited years after their original release. Recently, Professor Eicke R. Weber of the University of California at Berkeley joined as a co-editor of the series. Professor Weber, a well-known expert in the field of semiconductor materials, will further contribute to continuing the series' tradition of publishing timely, highly relevant, and long-impacting volumes. Some of the recent volumes, such as Hydrogen in Semiconductors, Imperfections in III/V Materials, Epitaxial Microstructures, High-Speed Heterostructure Devices, Oxygen in Silicon, and others promise that this tradition will be maintained and even expanded.
Author: Takashi Hariu
Publisher: World Scientific
ISBN: 9789971508395
Category : Technology & Engineering
Languages : en
Pages : 356
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Book Description
Low temperature processes for semiconductors have been recently under intensive development to fabricate controlled device structures with minute dimensions in order to achieve the highest device performance and new device functions as well as high integration density. Comprising reviews by experts long involved in the respective pioneering work, this volume makes a useful contribution toward maturing the process of low temperature epitaxy as a whole.
Author: Simon Deleonibus
Publisher: CRC Press
ISBN: 1351721771
Category : Science
Languages : en
Pages : 256
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Book Description
Since its invention, the integrated circuit has necessitated new process modules and numerous architectural changes to improve application performances, power consumption, and cost reduction. Silicon CMOS is now well established to offer the integration of several tens of billions of devices on a chip or in a system. At present, there are important challenges in the introduction of heterogeneous co-integration of materials and devices with the silicon CMOS 2D- and 3D-based platforms. New fabrication techniques allowing strong energy and variability efficiency come in as possible players to improve the various figures of merit of fabrication technology. Integrated Nanodevice and Nanosystem Fabrication: Breakthroughs and Alternatives is the second volume in the Pan Stanford Series on Intelligent Nanosystems. The book contains 8 chapters and is divided into two parts, the first of which reports breakthrough materials and techniques such as single ion implantation in silicon and diamond, graphene and 2D materials, nanofabrication using scanning probe microscopes, while the second tackles the scaling and architectural aspects of silicon devices through HiK scaling for nanoCMOS, nanoscale epitaxial growth of group IV semiconductors, design for variability co-optimization in SOI FinFETs, and nanowires for CMOS and diversifications.
Author: Guilei Wang
Publisher: Springer Nature
ISBN: 9811500460
Category : Technology & Engineering
Languages : en
Pages : 115
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Book Description
This thesis presents the SiGe source and drain (S/D) technology in the context of advanced CMOS, and addresses both device processing and epitaxy modelling. As the CMOS technology roadmap calls for continuously downscaling traditional transistor structures, controlling the parasitic effects of transistors, e.g. short channel effect, parasitic resistances and capacitances is becoming increasingly difficult. The emergence of these problems sparked a technological revolution, where a transition from planar to three-dimensional (3D) transistor design occurred in the 22nm technology node. The selective epitaxial growth (SEG) method has been used to deposit SiGe as stressor material in S/D regions to induce uniaxial strain in the channel region. The thesis investigates issues of process integration in IC production and concentrates on the key parameters of high-quality SiGe selective epitaxial growth, with a special focus on its pattern dependency behavior and on key integration issues in both 2D and 3D transistor structures, the goal being to improve future applications of SiGe SEG in advanced CMOS.
Author: Kim Ho Yeap
Publisher: BoD – Books on Demand
ISBN: 1789234964
Category : Technology & Engineering
Languages : en
Pages : 162
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Book Description
In this book, Complementary Metal Oxide Semiconductor ( CMOS ) devices are extensively discussed. The topics encompass the technology advancement in the fabrication process of metal oxide semiconductor field effect transistors or MOSFETs (which are the fundamental building blocks of CMOS devices) and the applications of transistors in the present and future eras. The book is intended to provide information on the latest technology development of CMOS to researchers, physicists, as well as engineers working in the field of semiconductor transistor manufacturing and design.
