Author: European Materials Research Society
Publisher:
ISBN:
Category :
Languages : en
Pages :

Get Book Here

Book Description

Author: J.P. Hirtz
Publisher: Elsevier
ISBN: 1483290425
Category : Science
Languages : en
Pages : 365

Get Book Here

Book Description
These three day symposia were designed to provide a link between specialists from university or industry who work in different fields of semiconductor optoelectronics. Symposium A dealt with topics including: epitaxial growth of III-V, II-VI, IV-VI, Si-based structures; selective-area, localized and non-planar epitaxy, shadow-mask epitaxy; bulk and new optoelectronic materials; polymers for optoelectronics. Symposium B dealt with III-V epitaxial layers grown by low temperature molecular beam epitaxy, a subject which has undergone rapid development in the last three years.

Author: Ramamurti Rajesh
Publisher:
ISBN:
Category : Crystal growth
Languages : en
Pages : 218

Get Book Here

Book Description

Author:
Publisher:
ISBN:
Category :
Languages : en
Pages : 81

Get Book Here

Book Description
Surface dynamics dominate the incorporation and segregation of atoms in the molecular beam epitaxy (MBE) of compound semiconductors. A rate equation model is proposed which includes the presence and dynamics of a physisorbed surface layer containing atoms riding the growth surface. The PA layer dictates the incorporation and concentration of various atomic species, such as AS(+)Ga and AS(0)Ga in low temperature GaAs MBE and In in InGaAs MBE growth. Additionally, it influences the RHEED oscillations (ROs) behavior. The model results for the dependence of AS(+)Ga and AS(0)Ga concentrations on beam equivalent pressure (BEP) and growth temperature are in good agreement with experimental data. Using the same kinetic model for the temporal behavior of the surface, the contribution of the PA layer to the RHEED intensity is computed based on kinematical theory of electron diffraction. The experimental observation of the ROs during growth at high and low temperatures with no ROs in the intermediate temperature range of 300-400 deg C is in good agreement with our model results. The same model is extended to investigate the segregation of In in InGaAs at temperatures in the range of 500-700 deg C for As (both dimer and tetramer) BEPs of 17 and 36. The model results of In incorporation rate versus growth temperature, segregation coefficient versus growth temperature and desorption rate versus time, are in excellent agreement with various results for a wide range of growth conditions reported in the literature. Activation energies for the various surface processes are in good agreement with literature.

Author: Mohamed Henini
Publisher: Elsevier
ISBN: 0128121378
Category : Science
Languages : en
Pages : 790

Get Book Here

Book Description
Molecular Beam Epitaxy (MBE): From Research to Mass Production, Second Edition, provides a comprehensive overview of the latest MBE research and applications in epitaxial growth, along with a detailed discussion and 'how to' on processing molecular or atomic beams that occur on the surface of a heated crystalline substrate in a vacuum. The techniques addressed in the book can be deployed wherever precise thin-film devices with enhanced and unique properties for computing, optics or photonics are required. It includes new semiconductor materials, new device structures that are commercially available, and many that are at the advanced research stage. This second edition covers the advances made by MBE, both in research and in the mass production of electronic and optoelectronic devices. Enhancements include new chapters on MBE growth of 2D materials, Si-Ge materials, AIN and GaN materials, and hybrid ferromagnet and semiconductor structures. - Condenses the fundamental science of MBE into a modern reference, speeding up literature review - Discusses new materials, novel applications and new device structures, grounding current commercial applications with modern understanding in industry and research - Includes coverage of MBE as mass production epitaxial technology and how it enhances processing efficiency and throughput for the semiconductor industry and nanostructured semiconductor materials research community

Author: Hajime Asahi
Publisher: John Wiley & Sons
ISBN: 1119355028
Category : Science
Languages : en
Pages : 694

Get Book Here

Book Description
Covers both the fundamentals and the state-of-the-art technology used for MBE Written by expert researchers working on the frontlines of the field, this book covers fundamentals of Molecular Beam Epitaxy (MBE) technology and science, as well as state-of-the-art MBE technology for electronic and optoelectronic device applications. MBE applications to magnetic semiconductor materials are also included for future magnetic and spintronic device applications. Molecular Beam Epitaxy: Materials and Applications for Electronics and Optoelectronics is presented in five parts: Fundamentals of MBE; MBE technology for electronic devices application; MBE for optoelectronic devices; Magnetic semiconductors and spintronics devices; and Challenge of MBE to new materials and new researches. The book offers chapters covering the history of MBE; principles of MBE and fundamental mechanism of MBE growth; migration enhanced epitaxy and its application; quantum dot formation and selective area growth by MBE; MBE of III-nitride semiconductors for electronic devices; MBE for Tunnel-FETs; applications of III-V semiconductor quantum dots in optoelectronic devices; MBE of III-V and III-nitride heterostructures for optoelectronic devices with emission wavelengths from THz to ultraviolet; MBE of III-V semiconductors for mid-infrared photodetectors and solar cells; dilute magnetic semiconductor materials and ferromagnet/semiconductor heterostructures and their application to spintronic devices; applications of bismuth-containing III–V semiconductors in devices; MBE growth and device applications of Ga2O3; Heterovalent semiconductor structures and their device applications; and more. Includes chapters on the fundamentals of MBE Covers new challenging researches in MBE and new technologies Edited by two pioneers in the field of MBE with contributions from well-known MBE authors including three Al Cho MBE Award winners Part of the Materials for Electronic and Optoelectronic Applications series Molecular Beam Epitaxy: Materials and Applications for Electronics and Optoelectronics will appeal to graduate students, researchers in academia and industry, and others interested in the area of epitaxial growth.

Author: Robin F.C. Farrow
Publisher: Elsevier
ISBN: 0815518404
Category : Technology & Engineering
Languages : en
Pages : 795

Get Book Here

Book Description
In this volume, the editor and contributors describe the use of molecular beam epitaxy (MBE) for a range of key materials systems that are of interest for both technological and fundamental reasons. Prior books on MBE have provided an introduction to the basic concepts and techniques of MBE and emphasize growth and characterization of GaAs-based structures. The aim in this book is somewhat different; it is to demonstrate the versatility of the technique by showing how it can be utilized to prepare and explore a range of distinct and diverse materials. For each of these materials systems MBE has played a key role both in their development and application to devices.

Author: Marian A. Herman
Publisher: Springer Science & Business Media
ISBN: 3642970982
Category : Technology & Engineering
Languages : en
Pages : 394

Get Book Here

Book Description
This first-ever monograph on molecular beam epitaxy (MBE) gives a comprehensive presentation of recent developments in MBE, as applied to crystallization of thin films and device structures of different semiconductor materials. MBE is a high-vacuum technology characterized by relatively low growth temperature, ability to cease or initiate growth abruptly, smoothing of grown surfaces and interfaces on an atomic scale, and the unique facility for in situ analysis of the structural parameters of the growing film. The excellent exploitation parameters of such MBE-produced devices as quantum-well lasers, high electron mobility transistors, and superlattice avalanche photodiodes have caused this technology to be intensively developed. The main text of the book is divided into three parts. The first presents and discusses the more important problems concerning MBE equipment. The second discusses the physico-chemical aspects of the crystallization processes of different materials (mainly semiconductors) and device structures. The third part describes the characterization methods which link the physical properties of the grown film or structures with the technological parameters of the crystallization procedure. Latest achievements in the field are emphasized, such as solid source MBE, including silicon MBE, gas source MBE, especially metalorganic MBE, phase-locked epitaxy and atomic-layer epitaxy, photoassisted molecular layer epitaxy and migration enhanced epitaxy.

Author: Morton B. Panish
Publisher: Springer Science & Business Media
ISBN: 3642781276
Category : Science
Languages : en
Pages : 441

Get Book Here

Book Description
The first book to present a unified treatment of hybrid source MBE and metalorganic MBE. Since metalorganic MBE permits selective area growth, the latest information on its application to the INP/GaInAs(P) system is presented. This system has been highlighted because it is one of rising importance, vital to optical communications systems, and has great potential for future ultra-highspeed electronics. The use of such analytical methods as high resolution x-ray diffraction, secondary ion mass spectroscopy, several photoluminescence methods, and the use of active devices for materials evaluation is shown in detail.

Author: J. P. Hirtz
Publisher:
ISBN:
Category :
Languages : en
Pages : 106

Get Book Here

Book Description