Liquid Phase Deposited Titanium Oxide as the Gate Insulator for AlGaN/GaN Heterostructure Field Effect Transistors PDF Download

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Liquid Phase Deposited Titanium Oxide as the Gate Insulator for AlGaN/GaN Heterostructure Field Effect Transistors

Author: 蔡明記
Publisher:
ISBN:
Category :
Languages : en
Pages : 71

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Author: 蔡明記
Publisher:
ISBN:
Category :
Languages : en
Pages : 71

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Book Description

Liquid-phase-deposited High Dielectric Barium-Doped Titanium Oxide for AlGaN/GaN Metal-Oxide-Semiconductor High Electron Mobility Transistor Applications PDF

Author: 林茂森
Publisher:
ISBN:
Category :
Languages : en
Pages : 142

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Liquid-Phase-Deposited High Dielectric Zirconium Oxide for AlGaN/GaN Metal-Oxide-Semiconductor High Electron Mobility Transistors PDF

Author: 邱處安
Publisher:
ISBN:
Category :
Languages : en
Pages : 59

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Thermal Analysis of AlGaN/GaN Heterostructure Field Effect Transistors Using Nematic Liquid Crystals and In-house Codes PDF

Author: Dimitri Kakovitch
Publisher:
ISBN:
Category : Field-effect transistors
Languages : en
Pages : 58

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Process Development and Characterization of AlGaN/GaN Heterostructure Field-Effect Transistors PDF

Author:
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Category :
Languages : en
Pages :

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Fabrication and Investigation of AlGaN/GaN Metal-oxide-semiconductor High-electron Mobility Field-effect Transistors with Gate Insulators Grown Using PEC Oxidation Method PDF

Author: 黃立賢
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ISBN:
Category :
Languages : en
Pages : 102

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Current Collapse and Device Degradation in AlGaN/GaN Heterostructure Field Effect Transistors PDF

Author: Daniel Balaz
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ISBN:
Category : Electronic apparatus and appliances
Languages : en
Pages : 157

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Device Design and Fabrication of AlGaN/GaN Metal-oxide-semiconductor Heterostructure Field-effect Transistors PDF

Author: Xuhong Hu
Publisher:
ISBN:
Category :
Languages : en
Pages : 286

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Evaluation of a Gate-first Process for AlGaN/GaN Metal-oxide-semiconductor Heterostructure Field-effect Transistors with Low Ohmic Annealing Temperature*Project Supported by the International Science and Technology Collaboration Program of China (Grant No. 2012DFG52260). PDF

Author:
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Category :
Languages : en
Pages :

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Design and Implementation of Heterostructure Field Effect Transistor on AlGaN/GaN PDF

Author: Adi Horn
Publisher:
ISBN:
Category :
Languages : en
Pages : 160

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Book Description