Linear and Non-linear Magneto-optical Spectroscopy of Spatially Separated Electrons and Holes in InAs/AlxGa1-xSb Quantum Wells

Linear and Non-linear Magneto-optical Spectroscopy of Spatially Separated Electrons and Holes in InAs/AlxGa1-xSb Quantum Wells PDF Author: Shailesh K. Singh
Publisher:
ISBN:
Category :
Languages : en
Pages : 430

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Linear and Non-linear Magneto-optical Spectroscopy of Spatially Separated Electrons and Holes in InAs/AlxGa1-xSb Quantum Wells

Linear and Non-linear Magneto-optical Spectroscopy of Spatially Separated Electrons and Holes in InAs/AlxGa1-xSb Quantum Wells PDF Author: Shailesh K. Singh
Publisher:
ISBN:
Category :
Languages : en
Pages : 430

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Book Description


Dissertation Abstracts International

Dissertation Abstracts International PDF Author:
Publisher:
ISBN:
Category : Dissertations, Academic
Languages : en
Pages : 862

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American Doctoral Dissertations

American Doctoral Dissertations PDF Author:
Publisher:
ISBN:
Category : Dissertation abstracts
Languages : en
Pages : 784

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Spin-orbit Coupling Effects in Two-Dimensional Electron and Hole Systems

Spin-orbit Coupling Effects in Two-Dimensional Electron and Hole Systems PDF Author: Roland Winkler
Publisher: Springer Science & Business Media
ISBN: 9783540011873
Category : Technology & Engineering
Languages : en
Pages : 244

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Book Description
The first part provides a general introduction to the electronic structure of quasi-two-dimensional systems with a particular focus on group-theoretical methods. The main part of the monograph is devoted to spin-orbit coupling phenomena at zero and nonzero magnetic fields. Throughout the book, the main focus is on a thorough discussion of the physical ideas and a detailed interpretation of the results. Accurate numerical calculations are complemented by simple and transparent analytical models that capture the important physics.

Topology in Condensed Matter

Topology in Condensed Matter PDF Author: Michael I. Monastyrsky
Publisher: Springer Science & Business Media
ISBN: 3540312641
Category : Science
Languages : en
Pages : 263

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Book Description
This book reports new results in condensed matter physics for which topological methods and ideas are important. It considers, on the one hand, recently discovered systems such as carbon nanocrystals and, on the other hand, new topological methods used to describe more traditional systems such as the Fermi surfaces of normal metals, liquid crystals and quasicrystals. The authors of the book are renowned specialists in their fields and present the results of ongoing research, some of it obtained only very recently and not yet published in monograph form.

Compound Semiconductor Photonics

Compound Semiconductor Photonics PDF Author: Chua Soo-Jin
Publisher: CRC Press
ISBN: 9814310441
Category : Science
Languages : en
Pages : 230

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Book Description
This proceeding is a collection of selected papers presented at Symposium O of Compound Semiconductor Photonics in the International Conference on Materials for Advanced Technology (ICMAT), which was held in Singapore from 28 June to 3 July 2009. The symposium covers a wide range of topics from fundamental semiconductor materials study to photonic device fabrication and application. The papers collected are of recent progress in the active and wide range of semiconductor photonics research. They include materials-related papers on III-As/P, III-nitride, quantum dot/wire/dash growth, ZnO, and chalcogenide, and devices-related papers on photonic crystals, VCSEL, quantum dot/dash lasers, LEDs, waveguides, solar cells and heterogeneous integrat

Physical Foundations of Solid-State Devices

Physical Foundations of Solid-State Devices PDF Author: E. Fred Schubert
Publisher: E. Fred Schubert
ISBN: 0986382620
Category : Technology & Engineering
Languages : en
Pages : 318

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Book Description
It is beneficial for technical personnel working in the field of microelectronics, optoelectronics, and photonics to get a good understanding of the physical foundations of modern semiconductor devices. Questions that technical personnel may ask are: How are electrons propagating in the periodic potential of a crystal lattice? What are the foundations of semiconductor heterostructure devices? How does quantum mechanics relate to semiconductor heterostructures? This book tries to answer questions such as these. The book provides a basis for the understanding of modern semiconductor devices that have dimensions in the nanometer range, that is, comparable to the electron de Broglie wavelength. For such small spatial dimensions, classical physics no longer gives a full description of physical processes. The inclusion of quantum mechanical principles becomes mandatory and provides a useful description of common physical processes in electronic, optoelectronic, and photonic devices. Chapters 1 to 11 teach the quantum‐mechanical principles, including the postulates of quantum mechanics, operators, the uncertainty principle, the Schrödinger equation, non‐periodic and periodic potentials, quantum wells, and perturbation theory. Chapters 12 to 20 apply these principles to semiconductor devices and discuss the density of states, semiconductor statistics, carrier concentrations, doping, tunneling, and aspects of heterostructure devices. The 2022 edition is a complete revision of the 2015 edition and also updates the formatting to make it easily viewable with electronic display devices.

X-Ray Absorption Spectroscopy of Semiconductors

X-Ray Absorption Spectroscopy of Semiconductors PDF Author: Claudia S. Schnohr
Publisher: Springer
ISBN: 3662443627
Category : Technology & Engineering
Languages : en
Pages : 367

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Book Description
X-ray Absorption Spectroscopy (XAS) is a powerful technique with which to probe the properties of matter, equally applicable to the solid, liquid and gas phases. Semiconductors are arguably our most technologically-relevant group of materials given they form the basis of the electronic and photonic devices that now so widely permeate almost every aspect of our society. The most effective utilisation of these materials today and tomorrow necessitates a detailed knowledge of their structural and vibrational properties. Through a series of comprehensive reviews, this book demonstrates the versatility of XAS for semiconductor materials analysis and presents important research activities in this ever growing field. A short introduction of the technique, aimed primarily at XAS newcomers, is followed by twenty independent chapters dedicated to distinct groups of materials. Topics span dopants in crystalline semiconductors and disorder in amorphous semiconductors to alloys and nanometric material as well as in-situ measurements of the effects of temperature and pressure. Summarizing research in their respective fields, the authors highlight important experimental findings and demonstrate the capabilities and applications of the XAS technique. This book provides a comprehensive review and valuable reference guide for both XAS newcomers and experts involved in semiconductor materials research.

Metalorganic Vapor Phase Epitaxy (MOVPE)

Metalorganic Vapor Phase Epitaxy (MOVPE) PDF Author: Stuart Irvine
Publisher: John Wiley & Sons
ISBN: 1119313015
Category : Technology & Engineering
Languages : en
Pages : 582

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Book Description
Systematically discusses the growth method, material properties, and applications for key semiconductor materials MOVPE is a chemical vapor deposition technique that produces single or polycrystalline thin films. As one of the key epitaxial growth technologies, it produces layers that form the basis of many optoelectronic components including mobile phone components (GaAs), semiconductor lasers and LEDs (III-Vs, nitrides), optical communications (oxides), infrared detectors, photovoltaics (II-IV materials), etc. Featuring contributions by an international group of academics and industrialists, this book looks at the fundamentals of MOVPE and the key areas of equipment/safety, precursor chemicals, and growth monitoring. It covers the most important materials from III-V and II-VI compounds to quantum dots and nanowires, including sulfides and selenides and oxides/ceramics. Sections in every chapter of Metalorganic Vapor Phase Epitaxy (MOVPE): Growth, Materials Properties and Applications cover the growth of the particular materials system, the properties of the resultant material, and its applications. The book offers information on arsenides, phosphides, and antimonides; nitrides; lattice-mismatched growth; CdTe, MCT (mercury cadmium telluride); ZnO and related materials; equipment and safety; and more. It also offers a chapter that looks at the future of the technique. Covers, in order, the growth method, material properties, and applications for each material Includes chapters on the fundamentals of MOVPE and the key areas of equipment/safety, precursor chemicals, and growth monitoring Looks at important materials such as III-V and II-VI compounds, quantum dots, and nanowires Provides topical and wide-ranging coverage from well-known authors in the field Part of the Materials for Electronic and Optoelectronic Applications series Metalorganic Vapor Phase Epitaxy (MOVPE): Growth, Materials Properties and Applications is an excellent book for graduate students, researchers in academia and industry, as well as specialist courses at undergraduate/postgraduate level in the area of epitaxial growth (MOVPE/ MOCVD/ MBE).

Electron and Photon Confinement in Semiconductor Nanostructures

Electron and Photon Confinement in Semiconductor Nanostructures PDF Author: Benoît Deveaud
Publisher: IOS Press
ISBN: 9781586033521
Category : Science
Languages : en
Pages : 584

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Book Description
The purpose of this course was to give an overview of the physics of artificial semiconductor structures confining electrons and photons. It furnishes the background for several applications in particular in the domain of optical devices, lasers, light emitting diodes or photonic crystals. The effects related to the microactivity polaritons, which are mixed electromagnetic radiation-exciton states inside a semiconconductor microactivity are covered. The study of the characteristics of such states shows strong relations with the domain of cavity quantum electrodynamics and thus with the investigation of some fundamental theoretical concepts.