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Author: Jean-Luc Pelouard
Publisher:
ISBN:
Category :
Languages : fr
Pages : 209
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Book Description
SIMULATION DES PHENOMENES DE TRANSPORT. REALISATION DE TRANSISTORS BIPOLAIRES A HETEROJONCTION INGAALAS-INGAAS-INGAALAS EN TECHNOLOGIE DOUBLE MESA ET TECHNOLOGIE DIFFUSEE A PARTIR DE COUCHES OBTENUES PAR EPITAXIE PAR JETS MOLECULAIRES
Author: Jean-Luc Pelouard
Publisher:
ISBN:
Category :
Languages : fr
Pages : 209
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Book Description
SIMULATION DES PHENOMENES DE TRANSPORT. REALISATION DE TRANSISTORS BIPOLAIRES A HETEROJONCTION INGAALAS-INGAAS-INGAALAS EN TECHNOLOGIE DOUBLE MESA ET TECHNOLOGIE DIFFUSEE A PARTIR DE COUCHES OBTENUES PAR EPITAXIE PAR JETS MOLECULAIRES
Author: Virginie Nodjiadjim
Publisher:
ISBN:
Category :
Languages : fr
Pages : 158
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Book Description
Cette thèse présente l'optimisation des performances du transistor bipolaire à double hétérojonction (TBDH) InP/InGaAs aux dimensions submicroniques. Tout d'abord nous présenterons le développement d'un modèle analytique tenant compte des spécificités du dessin et de la technologie de ce composant. Ce modèle, qui sera confronté aux résultats de mesures de paramètre S, servira à déterminer les dimensions optimales permettant d'atteindre des fréquences de coupure élevées et de mettre en évidence les principaux axes d'optimisation des performances. Puis nous étudierons plusieurs structures de couche pour la transition base collecteur visant à améliorer les propriétés de transport du TBH et repousser la densité de courant au seuil d'effet Kirk en vue d'augmenter les performances fréquentielles maximales du composant. Enfin, étant donné que les TBH fonctionnent à des densités de courant pouvant dépasser 800 kA/cm2, ceux-ci sont sujets à un auto-échauffement qui contribue à la dégradation de leurs performances fréquentielles et à un vieillissement prématuré. Nous nous intéresserons donc à l'influence de la température sur les performances et présenterons les solutions apportées pour réduire l'auto-échauffement et améliorer la fiabilité des TBH. Ce travail a permis de valider une filière de TBH possédant des fréquences de coupure fT et fmax comprises dans la gamme 250-300 GHz ainsi qu'une tension de claquage de l'ordre de 5 V. Ainsi, ces composants ont pu être utilisés pour la réalisation de circuits destinés aux transmissions à 100 Gbit/s.
Author:
Publisher:
ISBN:
Category : Physics
Languages : en
Pages : 918
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Book Description
Author: Lorenzo Pavesi
Publisher: Springer Science & Business Media
ISBN: 9783540210221
Category : Science
Languages : en
Pages : 424
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Book Description
This book gives a fascinating picture of the state-of-the-art in silicon photonics and a perspective on what can be expected in the near future. It is composed of a selected number of reviews authored by world leaders in the field and is written from both academic and industrial viewpoints. An in-depth discussion of the route towards fully integrated silicon photonics is presented. This book will be useful not only to physicists, chemists, materials scientists, and engineers but also to graduate students who are interested in the fields of microphotonics and optoelectronics.
Author: Robert G. Hunsperger
Publisher: Springer
ISBN: 3662135655
Category : Science
Languages : en
Pages : 337
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Book Description
Our intent in producing this book was to provide a text that would be comprehensive enough for an introductory course in integrated optics, yet concise enough in its mathematical derivations to be easily readable by a practicing engineer who desires an overview of the field. The response to the first edition has indeed been gratifying; unusually strong demand has caused it to be sold out during the initial year of publication, thus providing us with an early opportunity to produce this updated and improved second edition. This development is fortunate, because integrated optics is a very rapidly progressing field, with significant new research being regularly reported. Hence, a new chapter (Chap. 17) has been added to review recent progress and to provide numerous additional references to the relevant technical literature. Also, thirty-five new problems for practice have been included to supplement those at the ends of chapters in the first edition. Chapters I through 16 are essentially unchanged, except for brief updating revisions and corrections of typographical errors. Because of the time limitations imposed by the need to provide an uninterrupted supply of this book to those using it as a course text, it has been possible to include new references and to briefly describe recent developments only in Chapter 17. However, we hope to provide details of this continuing progress in a future edition.
Author: Henri H. Arsenault
Publisher: SPIE Press
ISBN: 9780819408259
Category : Computers
Languages : en
Pages : 150
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Book Description
This volume surveys the entire field of optical computing. The emphasis is on breadth of coverage. The book is descriptive, the authors minimize the use of mathematics, and it is therefore most suitable for those who require an overall view of what is going on in this field. A detailed comparison is given of the capabilities of electronics and optics, and the degree to which these capabilities have been achieved is indicated. Other areas of focus include optical computing architectures, components and technologies, optical interconnects, and optical neural nets. Approximately 300 references to key works in the field are included.
Author: Ginés Lifante
Publisher: Information Gatekeepers Inc
ISBN:
Category :
Languages : en
Pages : 50
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Book Description
Author: Marvin L. Cohen
Publisher: Springer Science & Business Media
ISBN: 3642613381
Category : Science
Languages : en
Pages : 272
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Book Description
Author: Katsunari Okamoto
Publisher: Elsevier
ISBN: 0080455069
Category : Technology & Engineering
Languages : en
Pages : 578
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Book Description
Fundamentals of Optical Waveguides is an essential resource for any researcher, professional or student involved in optics and communications engineering. Any reader interested in designing or actively working with optical devices must have a firm grasp of the principles of lightwave propagation. Katsunari Okamoto has presented this difficult technology clearly and concisely with several illustrations and equations. Optical theory encompassed in this reference includes coupled mode theory, nonlinear optical effects, finite element method, beam propagation method, staircase concatenation method, along with several central theorems and formulas. Since the publication of the well-received first edition of this book, planar lightwave circuits and photonic crystal fibers have fully matured. With this second edition the advances of these fibers along with other improvements on existing optical technologies are completely detailed. This comprehensive volume enables readers to fully analyze, design and simulate optical atmospheres. - Exceptional new chapter on Arrayed-Waveguide Grating (AWG) - In-depth discussion of Photonic Crystal Fibers (PCFs) - Thorough explanation of Multimode Interference Devices (MMI) - Full coverage of polarization Mode Dispersion (PMD)
Author: Yijie Huo
Publisher: Stanford University
ISBN:
Category :
Languages : en
Pages : 139
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Book Description
The on-chip interconnect bandwidth limitation is becoming an increasingly critical challenge for integrated circuits (ICs) as device scaling continues to push the speed and density of ICs. Silicon photonics has the ability to solve this emerging problem due to its high speed, high bandwidth, low power consumption, and ability to be monolithically integrated on silicon. Most of the key devices for Si photonic ICs have already been demonstrated. However, a practical CMOS compatible coherent light source is still a major challenge. Germanium (Ge) has already been demonstrated to be a promising material for optoelectronic devices, such as photo-detectors and modulators. However, Ge is an indirect band gap semiconductor, which makes Ge-based light sources very inefficient and limits their practical use. Fortunately, the direct [uppercase Gamma] valley of the Ge conduction band is only 0.14 eV higher than the indirect L valley, suggesting that with band-structure engineering, Ge has the potential to become a direct band gap material and an efficient light emitter. In this dissertation, we first discuss our work on highly biaxial tensile strained Ge grown by molecular beam epitaxy (MBE). Relaxed step-graded InGaAs buffer layers, which are prepared with low temperature growth and high temperature annealing, are used to provide a larger lattice constant substrate to produce tensile strain in Ge epitaxial layers. Up to 2.3% in-plane biaxial tensile strained thin Ge epitaxial layers were achieved with smooth surfaces and low threading dislocation density. A strong increase of photoluminescence with highly tensile strained Ge layers at low temperature suggests that a direct band gap semiconductor has been achieved. This dissertation also presents our work on more than 9% Sn incorporation in epitaxial GeSn alloys using a low temperature MBE growth method. This amount of Sn is 10 times greater than the solid-solubility of Sn in crystalline Ge. Material characterization shows good crystalline quality without Sn precipitation or phase segregation. With increasing Sn percentage, direct band gap narrowing is observed by optical transmission measurements. The studies described in this dissertation will help enable efficient germanium based CMOS compatible coherent light sources. Other possible applications of this work are also discussed in the concluding chapter.
