Lateral Solid Phase Epitaxy of Silicon and Application to the Fabrication of Metal Oxide Semiconductor Field Effect Transistors

Lateral Solid Phase Epitaxy of Silicon and Application to the Fabrication of Metal Oxide Semiconductor Field Effect Transistors PDF Author: Brian Joseph Greene
Publisher:
ISBN:
Category :
Languages : en
Pages : 180

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Oriented Crystallization on Amorphous Substrates

Oriented Crystallization on Amorphous Substrates PDF Author: E.I. Givargizov
Publisher: Springer Science & Business Media
ISBN: 1489925600
Category : Technology & Engineering
Languages : en
Pages : 377

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Book Description
Present-day scienceand technology have become increasingly based on studies and applications of thin films. This is especiallytrue of solid-state physics, semiconduc tor electronics, integrated optics, computer science, and the like. In these fields, it is necessary to use filmswith an ordered structure, especiallysingle-crystallinefilms, because physical phenomena and effects in such films are most reproducible. Also, active parts of semiconductor and other devices and circuits are created, as a rule, in single-crystal bodies. To date, single-crystallinefilms have been mainly epitaxial (or heteroepitaxial); i.e., they have been grown on a single-crystalline substrate, and principal trends, e.g., in the evolution of integrated circuits (lCs), have been based on continuing reduction in feature size and increase in the number of components per chip. However, as the size decreases into the submicrometer range, technological and physical limitations in integrated electronics become more and more severe. It is generally believed that a feature size of about 0.1um will have a crucial character. In other words, the present two-dimensional ICs are anticipated to reach their limit of minimization in the near future, and it is realized that further increase of packing density and/or functions might depend on three-dimensional integration. To solve the problem, techniques for preparation of single-crystalline films on arbitrary (including amorphous) substrates are essential.

JJAP

JJAP PDF Author:
Publisher:
ISBN:
Category : Engineering
Languages : en
Pages : 424

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Japanese Journal of Applied Physics

Japanese Journal of Applied Physics PDF Author:
Publisher:
ISBN:
Category : Physics
Languages : en
Pages : 1218

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JJAP Letters

JJAP Letters PDF Author:
Publisher:
ISBN:
Category : Physics
Languages : en
Pages : 678

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Semiconductor-On-Insulator Materials for Nanoelectronics Applications

Semiconductor-On-Insulator Materials for Nanoelectronics Applications PDF Author: Alexei Nazarov
Publisher: Springer Science & Business Media
ISBN: 3642158684
Category : Technology & Engineering
Languages : en
Pages : 437

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Book Description
"Semiconductor-On-Insulator Materials for NanoElectronics Applications” is devoted to the fast evolving field of modern nanoelectronics, and more particularly to the physics and technology of nanoelectronic devices built on semiconductor-on-insulator (SemOI) systems. The book contains the achievements in this field from leading companies and universities in Europe, USA, Brazil and Russia. It is articulated around four main topics: 1. New semiconductor-on-insulator materials; 2. Physics of modern SemOI devices; 3. Advanced characterization of SemOI devices; 4. Sensors and MEMS on SOI. "Semiconductor-On-Insulator Materials for NanoElectonics Applications” is useful not only to specialists in nano- and microelectronics but also to students and to the wider audience of readers who are interested in new directions in modern electronics and optoelectronics.

Scientific and Technical Aerospace Reports

Scientific and Technical Aerospace Reports PDF Author:
Publisher:
ISBN:
Category : Aeronautics
Languages : en
Pages : 456

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Book Description
Lists citations with abstracts for aerospace related reports obtained from world wide sources and announces documents that have recently been entered into the NASA Scientific and Technical Information Database.

Silicon Molecular Beam Epitaxy

Silicon Molecular Beam Epitaxy PDF Author: E. Kasper
Publisher: CRC Press
ISBN: 1351093525
Category : Technology & Engineering
Languages : en
Pages : 411

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Book Description
This subject is divided into two volumes. Volume I is on homoepitaxy with the necessary systems, techniques, and models for growth and dopant incorporation. Three chapters on homoepitaxy are followed by two chapters describing the different ways in which MBE may be applied to create insulator/Si stackings which may be used for three-dimensional circuits. The two remaining chapters in Volume I are devoted to device applications. The first three chapters of Volume II treat all aspects of heteroepitaxy with the exception of the epitaxial insulator/Si structures already treated in volume I.

Nanoscale Devices

Nanoscale Devices PDF Author: Brajesh Kumar Kaushik
Publisher: CRC Press
ISBN: 1351670212
Category : Science
Languages : en
Pages : 414

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Book Description
The primary aim of this book is to discuss various aspects of nanoscale device design and their applications including transport mechanism, modeling, and circuit applications. . Provides a platform for modeling and analysis of state-of-the-art devices in nanoscale regime, reviews issues related to optimizing the sub-nanometer device performance and addresses simulation aspect and/or fabrication process of devices Also, includes design problems at the end of each chapter

Silicon Epitaxy

Silicon Epitaxy PDF Author:
Publisher: Elsevier
ISBN: 0080541003
Category : Science
Languages : en
Pages : 514

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Book Description
Since its inception in 1966, the series of numbered volumes known as Semiconductors and Semimetals has distinguished itself through the careful selection of well-known authors, editors, and contributors. The Willardson and Beer series, as it is widely known, has succeeded in producing numerous landmark volumes and chapters. Not only did many of these volumes make an impact at the time of their publication, but they continue to be well-cited years after their original release. Recently, Professor Eicke R. Weber of the University of California at Berkeley joined as a co-editor of the series. Professor Weber, a well-known expert in the field of semiconductor materials, will further contribute to continuing the series' tradition of publishing timely, highly relevant, and long-impacting volumes. Some of the recent volumes, such as Hydrogen in Semiconductors, Imperfections in III/V Materials, Epitaxial Microstructures, High-Speed Heterostructure Devices, Oxygen in Silicon, and others promise that this tradition will be maintained and even expanded.