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Author: Michael Reisch
Publisher: Springer Science & Business Media
ISBN: 364255900X
Category : Technology & Engineering
Languages : en
Pages : 671
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Book Description
This modern book-length treatment gives a detailed presentation of high-frequency bipolar transistors in silicon or silicon-germanium technology, with particular emphasis placed on today's advanced compact models and their physical foundations.
Author: Michael Reisch
Publisher: Springer Science & Business Media
ISBN: 364255900X
Category : Technology & Engineering
Languages : en
Pages : 671
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Book Description
This modern book-length treatment gives a detailed presentation of high-frequency bipolar transistors in silicon or silicon-germanium technology, with particular emphasis placed on today's advanced compact models and their physical foundations.
Author: Jung Han Choi
Publisher: CRC Press
ISBN: 1466590122
Category : Science
Languages : en
Pages : 258
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Book Description
Presenting the cutting-edge results of new device developments and circuit implementations, High-Speed Devices and Circuits with THz Applications covers the recent advancements of nano devices for terahertz (THz) applications and the latest high-speed data rate connectivity technologies from system design to integrated circuit (IC) design, providing relevant standard activities and technical specifications. Featuring the contributions of leading experts from industry and academia, this pivotal work: Discusses THz sensing and imaging devices based on nano devices and materials Describes silicon on insulator (SOI) multigate nanowire field-effect transistors (FETs) Explains the theory underpinning nanoscale nanowire metal-oxide-semiconductor field-effect transistors (MOSFETs), simulation methods, and their results Explores the physics of the silicon-germanium (SiGe) heterojunction bipolar transistor (HBT), as well as commercially available SiGe HBT devices and their applications Details aspects of THz IC design using standard silicon (Si) complementary metal-oxide-semiconductor (CMOS) devices, including experimental setups for measurements, detection methods, and more An essential text for the future of high-frequency engineering, High-Speed Devices and Circuits with THz Applications offers valuable insight into emerging technologies and product possibilities that are attractive in terms of mass production and compatibility with current manufacturing facilities.
Author: Niccolò Rinaldi
Publisher: River Publishers
ISBN: 8793519613
Category : Technology & Engineering
Languages : en
Pages : 378
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Book Description
The semiconductor industry is a fundamental building block of the new economy, there is no area of modern life untouched by the progress of nanoelectronics. The electronic chip is becoming an ever-increasing portion of system solutions, starting initially from less than 5% in the 1970 microcomputer era, to more than 60% of the final cost of a mobile telephone, 50% of the price of a personal computer (representing nearly 100% of the functionalities) and 30% of the price of a monitor in the early 2000's. Interest in utilizing the (sub-)mm-wave frequency spectrum for commercial and research applications has also been steadily increasing. Such applications, which constitute a diverse but sizeable future market, span a large variety of areas such as health, material science, mass transit, industrial automation, communications, and space exploration. Silicon-Germanium Heterojunction Bipolar Transistors for mm-Wave Systems Technology, Modeling and Circuit Applications provides an overview of results of the DOTSEVEN EU research project, and as such focusses on key material developments for mm-Wave Device Technology. It starts with the motivation at the beginning of the project and a summary of its major achievements. The subsequent chapters provide a detailed description of the obtained research results in the various areas of process development, device simulation, compact device modeling, experimental characterization, reliability, (sub-)mm-wave circuit design and systems.
Author: Michael Schrter
Publisher: World Scientific
ISBN: 981427321X
Category : Technology & Engineering
Languages : en
Pages : 753
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Book Description
Compact Hierarchical Bipolar Transistor Modeling with HICUM will be of great practical benefit to professionals from the process development, modeling and circuit design community who are interested in the application of bipolar transistors, which include the SiGe:C HBTs fabricated with existing cutting-edge process technology. The book begins with an overview on the different device designs of modern bipolar transistors, along with their relevant operating conditions; while the subsequent chapter on transistor theory is subdivided into a review of mostly classical theories, brought into context with modern technology, and a chapter on advanced theory that is required for understanding modern device designs. This book aims to provide a solid basis for the understanding of modern compact models.
Author: M. F. Chang
Publisher: World Scientific
ISBN: 9789810220976
Category : Technology & Engineering
Languages : en
Pages : 448
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Book Description
Recent advances in communication, digital signal processing and computational systems demand very high performance electronic circuits. Heterojunction Bipolar Transistors (HBTs) have the potential of providing a more efficient solution to many key system requirements through intrinsic device advantages. This book reviews the present status of GaAs, InP and silicon-based HBT technologies and their applications to digital, analog, microwave and mixed-signal circuits and systems. It represents the first major effort to cover the complete scope of the HBT technology development in the past decade, starting from the fundamental device physics, material growth, device reliability, scaling, processing, modeling to advanced HBT integrated circuit design for various system applications.
Author: Gennady Gildenblat
Publisher: Springer Science & Business Media
ISBN: 9048186145
Category : Technology & Engineering
Languages : en
Pages : 531
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Book Description
Most of the recent texts on compact modeling are limited to a particular class of semiconductor devices and do not provide comprehensive coverage of the field. Having a single comprehensive reference for the compact models of most commonly used semiconductor devices (both active and passive) represents a significant advantage for the reader. Indeed, several kinds of semiconductor devices are routinely encountered in a single IC design or in a single modeling support group. Compact Modeling includes mostly the material that after several years of IC design applications has been found both theoretically sound and practically significant. Assigning the individual chapters to the groups responsible for the definitive work on the subject assures the highest possible degree of expertise on each of the covered models.
Author: Shuqing Cao
Publisher: Stanford University
ISBN:
Category :
Languages : en
Pages : 137
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Book Description
It is the main objective of this work to address the scaling and design challenges of ESD protection in deeply scaled technologies. First, the thesis introduces the on-chip ESD events, the scaling and design challenges, and the nomenclatures necessary for later chapters. The ESD design window and the I/O schematics for both rail clamping and local clamping ESD schemes are illustrated. Then, the thesis delves into the investigation of the input and output driver devices and examines their robustness under ESD. The input driver's oxide breakdown levels are evaluated in deeply scaled technologies. The output driver's trigger and breakdown voltages are improved appreciably by applying circuit and device design techniques. The ESD device sections first discuss rail-based clamping, a widely used protection scheme. Two diode-based devices, namely the gated diode and substrate diode, are investigated in detail with SOI test structures. Characterization is based on DC current-voltage (I-V), Very Fast Transmission Line Pulse (VF-TLP), capacitance, and leakage measurements. Improvements in performance are realized. Technology computer aided design (TCAD) simulations help understand the physical effects and design tradeoffs. Then, the following section focuses on the local clamping scheme. Two devices, the field-effect diode (FED) and the double-well FED (DWFED), are developed and optimized in an SOI technology. Trigger circuits are designed to improve the turn-on speed. The advantages of local clamping is highlighted and compared with the rail-based clamping. The results show that the FED is a suitable option for power clamping applications and the DWFED is most suitable for pad-based local clamping. The thesis presents an ESD protection design methodology, which takes advantage of the results and techniques from pervious chapters and put each element into a useful format. Based on the correlation of package level and in-lab test results, a design process based on CDM target definition and device optimization, discharge path analysis, parasitic minimization, I/O data rate estimation and finally ESD and performance characterization is used sequentially to systematically realize the overall design goals.
Author: Robert Leoni
Publisher: World Scientific
ISBN: 9814480800
Category : Technology & Engineering
Languages : en
Pages : 314
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Book Description
This volume presents state-of-the-art works from top academic and research institutions in the areas of high performance semiconductor materials, devices, and circuits. A broad coverage of topics relating to high performance devices and circuits is featured here. There are 46 contributed papers covering a wide range of materials, device types, and applications. These papers describe the results of ongoing research in three general areas: high speed technologies for advanced mixed signal and terahertz applications, advanced technologies for high performance optical links and light sources, and high power density and high efficiency technologies for next generation microwave front ends and power electronics.
Author: John D. Cressler
Publisher: CRC Press
ISBN: 1351832808
Category : Technology & Engineering
Languages : en
Pages : 1044
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Book Description
Unfriendly to conventional electronic devices, circuits, and systems, extreme environments represent a serious challenge to designers and mission architects. The first truly comprehensive guide to this specialized field, Extreme Environment Electronics explains the essential aspects of designing and using devices, circuits, and electronic systems intended to operate in extreme environments, including across wide temperature ranges and in radiation-intense scenarios such as space. The Definitive Guide to Extreme Environment Electronics Featuring contributions by some of the world’s foremost experts in extreme environment electronics, the book provides in-depth information on a wide array of topics. It begins by describing the extreme conditions and then delves into a description of suitable semiconductor technologies and the modeling of devices within those technologies. It also discusses reliability issues and failure mechanisms that readers need to be aware of, as well as best practices for the design of these electronics. Continuing beyond just the "paper design" of building blocks, the book rounds out coverage of the design realization process with verification techniques and chapters on electronic packaging for extreme environments. The final set of chapters describes actual chip-level designs for applications in energy and space exploration. Requiring only a basic background in electronics, the book combines theoretical and practical aspects in each self-contained chapter. Appendices supply additional background material. With its broad coverage and depth, and the expertise of the contributing authors, this is an invaluable reference for engineers, scientists, and technical managers, as well as researchers and graduate students. A hands-on resource, it explores what is required to successfully operate electronics in the most demanding conditions.
Author:
Publisher: Allied Publishers
ISBN: 9788177641004
Category : Computer networks
Languages : en
Pages : 444
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Book Description
