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Author: Robert S. Mason (2LT, USAF.)
Publisher:
ISBN:
Category : Annealing of crystals
Languages : en
Pages : 120
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Book Description
Author: Robert S. Mason (2LT, USAF.)
Publisher:
ISBN:
Category : Annealing of crystals
Languages : en
Pages : 120
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Book Description
Author: Robert S. Mason
Publisher:
ISBN:
Category :
Languages : en
Pages : 68
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Book Description
Ion implanted GaAs, irradiated by a Q-switched ruby laser, is examined primarily by cathodoluminescence, as well as ellipsometry and electrical measurements, to evaluate the quality of laser anneal. Weak cathodoluminescence spectra from laser irradiated samples indicate far less radiative centers than in thermally annealed samples. Emitted radiation from existing centers is attenuated by the formation of a surface layer on GaAs during exposure to the ruby laser, resulting in spectra which is slightly weaker than spectra representative of the material's condition. This attenuating layer occurs in both virgin and implanted GaAs exposed to ruby laser radiation. Ion implanted Si, exposed to the same Q-switched ruby laser, is examined by Rutherford backscattering and indicates a return to crystallinity of the implant layer. (Author).
Author: Arkady Michael Horak
Publisher:
ISBN:
Category :
Languages : en
Pages : 78
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Author: J. F. Morhange
Publisher:
ISBN:
Category :
Languages : en
Pages : 80
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Book Description
Contents: Raman Spectroscopy of Amorphous GaAs of Crystalline Transition Induced by Laser Annealing; The Vibration of a Gallium Arsenide Microcristallite; Experimental Determination of the Temperature of Silicon at the Spot of a Continuous Laser; Raman Spectroscopy of Very Heavily Doped Silicon; Sub-Picosecond Spectroscopy. Annexes: Lattice Dynamics of Thin Ionic Slabs; Anharmonic Effects in Light Scattering Due to Optical Phonons in Silicon; Fundamental of Laser Annealing.
Author: Gary Lynn Harris
Publisher:
ISBN:
Category : Ion implantation
Languages : en
Pages : 314
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Book Description
Author: J Poate
Publisher: Elsevier
ISBN: 0323145426
Category : Technology & Engineering
Languages : en
Pages : 577
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Book Description
Laser Annealing of Semiconductors deals with the materials science of surfaces that have been subjected to ultrafast heating by intense laser or electron beams. This book is organized into 13 chapters that specifically tackle transient annealing of compound semiconductors. After briefly dealing with an overview of laser annealing, this book goes on discussing the concepts of solidification and crystallization pertinent to the field. These topics are followed by discussions on the main mechanisms of interaction of photon and electron beams with condensed matter; the calculation of thermophysical properties of crystalline materials; and high-speed crystal growth by laser annealing of ion-implanted silicon. The subsequent chapters describe the microstructural and topographical properties of annealed semiconductor layers and the epitaxy of ion-implanted silicon irradiated with a laser or electron beam single pulse. This text also explores the electronic and surface properties and the continuous-wave beam processing of semiconductors. The concluding chapters cover various reactions in metal-semiconductor systems, such as fast and laser-induced melting, solidification, mixing, and quenching. Laser-induced interactions in metal-semiconductor systems and the factors involved in control of the heat treatment process are also discussed in these chapters. Materials scientists and researchers and device engineers will find this book invaluable.
Author: Bill W. Mullins (2LT, USAF.)
Publisher:
ISBN:
Category : Annealing of crystals
Languages : en
Pages : 112
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Book Description
Author: S. S. Kular
Publisher:
ISBN:
Category :
Languages : en
Pages : 285
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Author:
Publisher:
ISBN:
Category :
Languages : en
Pages :
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It is shown that, in the pulsed-laser irradiation of crystalline or lightly damaged GaAs, good agreement is obtained between measured and calculated thresholds for melting, for catastrophic damage due to vaporization, and for the duration of surface melting at various energy densities. Good agreement between theory and experiment is also obtained for dopant profile spreading during pulsed-laser annealing.
Author: Mark R. Wilson
Publisher:
ISBN:
Category :
Languages : en
Pages : 442
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Book Description
