Kinetics of Silicon Epitaxy Using SiH4 in a Rapid Thermal Chemical Vapor Deposition Reactor PDF Download
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Author: M. Liehr
Publisher:
ISBN:
Category :
Languages : en
Pages : 3
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Book Description
The equilibrium hydrogen surface coverage on Si(100) during silicon epitaxy using SiH4 has been measured in a rapid thermal chemical vapor deposition reactor. The hydrogen coverage could be 'frozen out' completely on the surface by a rapid cool-down and pump-down of the reactor up to temperatures of 575 C; at temperatures above 575 C only partial 'freeze-out' is achieved. Surface hydrogen was titrated in situ using the reactor as a thermal desorption spectrometer. Epitaxial silicon films were grown in the temperature range 450-700 C and the film growth kinetics was correlated with the equilibrium hydrogen coverage. The growth mechanism changes from the low-temperature regime, where the surface is hydrogen covered, to the high-temperature regime, where the surface is essentially clean. (jes).
Author: M. Liehr
Publisher:
ISBN:
Category :
Languages : en
Pages : 3
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Book Description
The equilibrium hydrogen surface coverage on Si(100) during silicon epitaxy using SiH4 has been measured in a rapid thermal chemical vapor deposition reactor. The hydrogen coverage could be 'frozen out' completely on the surface by a rapid cool-down and pump-down of the reactor up to temperatures of 575 C; at temperatures above 575 C only partial 'freeze-out' is achieved. Surface hydrogen was titrated in situ using the reactor as a thermal desorption spectrometer. Epitaxial silicon films were grown in the temperature range 450-700 C and the film growth kinetics was correlated with the equilibrium hydrogen coverage. The growth mechanism changes from the low-temperature regime, where the surface is hydrogen covered, to the high-temperature regime, where the surface is essentially clean. (jes).
Author: Victor E. Borisenko
Publisher: Springer Science & Business Media
ISBN: 1489918043
Category : Technology & Engineering
Languages : en
Pages : 374
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Book Description
Rapid thermal processing has contributed to the development of single wafer cluster processing tools and other innovations in integrated circuit manufacturing environments. Borisenko and Hesketh review theoretical and experimental progress in the field, discussing a wide range of materials, processes, and conditions. They thoroughly cover the work of international investigators in the field.
Author: John D. Cressler
Publisher: CRC Press
ISBN: 1351834797
Category : Technology & Engineering
Languages : en
Pages : 373
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Book Description
What seems routine today was not always so. The field of Si-based heterostructures rests solidly on the shoulders of materials scientists and crystal growers, those purveyors of the semiconductor “black arts” associated with the deposition of pristine films of nanoscale dimensionality onto enormous Si wafers with near infinite precision. We can now grow near-defect free, nanoscale films of Si and SiGe strained-layer epitaxy compatible with conventional high-volume silicon integrated circuit manufacturing. SiGe and Si Strained-Layer Epitaxy for Silicon Heterostructure Devices tells the materials side of the story and details the many advances in the Si-SiGe strained-layer epitaxy for device applications. Drawn from the comprehensive and well-reviewed Silicon Heterostructure Handbook, this volume defines and details the many advances in the Si/SiGe strained-layer epitaxy for device applications. Mining the talents of an international panel of experts, the book covers modern SiGe epitaxial growth techniques, epi defects and dopant diffusion in thin films, stability constraints, and electronic properties of SiGe, strained Si, and Si-C alloys. It includes appendices on topics such as the properties of Si and Ge, the generalized Moll-Ross relations, integral charge-control relations, and sample SiGe HBT compact model parameters.
Author: H. Q. Hou
Publisher: The Electrochemical Society
ISBN: 9781566771948
Category : Technology & Engineering
Languages : en
Pages : 664
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Book Description
Author: Mahesh Kumar Sanganeria
Publisher:
ISBN:
Category :
Languages : en
Pages : 446
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Book Description
Author: John D. Cressler
Publisher: CRC Press
ISBN: 1420026585
Category : Technology & Engineering
Languages : en
Pages : 1248
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Book Description
An extraordinary combination of material science, manufacturing processes, and innovative thinking spurred the development of SiGe heterojunction devices that offer a wide array of functions, unprecedented levels of performance, and low manufacturing costs. While there are many books on specific aspects of Si heterostructures, the Silicon Heterostructure Handbook: Materials, Fabrication, Devices, Circuits, and Applications of SiGe and Si Strained-Layer Epitaxy is the first book to bring all aspects together in a single source. Featuring broad, comprehensive, and in-depth discussion, this handbook distills the current state of the field in areas ranging from materials to fabrication, devices, CAD, circuits, and applications. The editor includes "snapshots" of the industrial state-of-the-art for devices and circuits, presenting a novel perspective for comparing the present status with future directions in the field. With each chapter contributed by expert authors from leading industrial and research institutions worldwide, the book is unequalled not only in breadth of scope, but also in depth of coverage, timeliness of results, and authority of references. It also includes a foreword by Dr. Bernard S. Meyerson, a pioneer in SiGe technology. Containing nearly 1000 figures along with valuable appendices, the Silicon Heterostructure Handbook authoritatively surveys materials, fabrication, device physics, transistor optimization, optoelectronics components, measurement, compact modeling, circuit design, and device simulation.
Author: Katherine Elizabeth Violette
Publisher:
ISBN:
Category :
Languages : en
Pages : 502
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Book Description
Author:
Publisher: Elsevier
ISBN: 0080931200
Category : Science
Languages : en
Pages : 1037
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Book Description
This volume of the Handbook of Surface Science covers all aspects of the dynamics of surface processes. Two dozen world leading experts in this field address the subjects of energy exchange in gas atoms, surface collisions, the rules governing dissociative adsorption on surfaces, the formation of nanostructures on surfaces by self-assembly, and the study of surface phenomena using ultra-fast lasers. The chapters are written for both newcomers to the field as well as researchers. • Covers all aspects of the dynamics of surface processes • Provides understanding of this unique field utilizing a multitude of accurate experiments and advanced microscopic theory that allows quantum-level comparisons • Presents the concepts and tools relevant beyond surface science for catalysis, nanotechnology, biology, medicine, and materials
Author: John D. Leighton
Publisher:
ISBN:
Category :
Languages : en
Pages : 246
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Book Description
Author: Y. Shiraki
Publisher: Elsevier
ISBN: 0444596895
Category : Science
Languages : en
Pages : 289
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Book Description
The preparation of silicon germanium microstructures, their physical, chemical and electrical characterization, and their device processing and application are reviewed in this book. Special emphasis is given to ultrathin Si/Ge superlattices. Topics covered include: Wafer preparation and epitaxial growth; surface effects driven phenomena, such as clustering, segregation, 'surfactants'; Analysis, both in situ and ex situ; Strain adjustment methods; High quality buffers; Modification of material properties by quantum wells and superlattices; Devices: Novel concepts, processing, modelling, demonstrators. The questions highlighted, particularly those articles comparing related or competing activities, will provide a wealth of knowledge for all those interested in the future avenues of theory and applications in this field.
