Microwave and RF Vacuum Electronic Power Sources PDF Download
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Author: Richard G. Carter
Publisher: Cambridge University Press
ISBN: 1108660878
Category : Technology & Engineering
Languages : en
Pages : 844
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Book Description
Do you design and build vacuum electron devices, or work with the systems that use them? Quickly develop a solid understanding of how these devices work with this authoritative guide, written by an author with over fifty years of experience in the field. Rigorous in its approach, it focuses on the theory and design of commercially significant types of gridded, linear-beam, crossed-field and fast-wave tubes. Essential components such as waveguides, resonators, slow-wave structures, electron guns, beams, magnets and collectors are also covered, as well as the integration and reliable operation of devices in microwave and RF systems. Complex mathematical analysis is kept to a minimum, and Mathcad worksheets supporting the book online aid understanding of key concepts and connect the theory with practice. Including coverage of primary sources and current research trends, this is essential reading for researchers, practitioners and graduate students working on vacuum electron devices.
Author: Richard G. Carter
Publisher: Cambridge University Press
ISBN: 1108660878
Category : Technology & Engineering
Languages : en
Pages : 844
Get Book Here
Book Description
Do you design and build vacuum electron devices, or work with the systems that use them? Quickly develop a solid understanding of how these devices work with this authoritative guide, written by an author with over fifty years of experience in the field. Rigorous in its approach, it focuses on the theory and design of commercially significant types of gridded, linear-beam, crossed-field and fast-wave tubes. Essential components such as waveguides, resonators, slow-wave structures, electron guns, beams, magnets and collectors are also covered, as well as the integration and reliable operation of devices in microwave and RF systems. Complex mathematical analysis is kept to a minimum, and Mathcad worksheets supporting the book online aid understanding of key concepts and connect the theory with practice. Including coverage of primary sources and current research trends, this is essential reading for researchers, practitioners and graduate students working on vacuum electron devices.
Author: Stanford University Stanford Electronics Laboratories
Publisher:
ISBN:
Category :
Languages : en
Pages : 110
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Book Description
Author: Harry A. Schafft
Publisher:
ISBN:
Category : Sealing (Technology)
Languages : en
Pages : 64
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Book Description
Author:
Publisher:
ISBN:
Category : Physical instruments
Languages : en
Pages : 146
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Book Description
Author: Argonne National Laboratory. Library Services Department
Publisher:
ISBN:
Category : Periodicals
Languages : en
Pages : 286
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Book Description
Author: Library of Congress. Copyright Office
Publisher:
ISBN:
Category : American drama
Languages : en
Pages : 728
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Book Description
Author: Library of Congress. Copyright Office
Publisher:
ISBN:
Category : Copyright
Languages : en
Pages : 586
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Book Description
Author: Paul R. Gray
Publisher: John Wiley & Sons
ISBN: 0470245999
Category : Technology & Engineering
Languages : en
Pages : 896
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Book Description
This is the only comprehensive book in the market for engineers that covers the design of CMOS and bipolar analog integrated circuits. The fifth edition retains its completeness and updates the coverage of bipolar and CMOS circuits. A thorough analysis of a new low-voltage bipolar operational amplifier has been added to Chapters 6, 7, 9, and 11. Chapter 12 has been updated to include a fully differential folded cascode operational amplifier example. With its streamlined and up-to-date coverage, more engineers will turn to this resource to explore key concepts in the field.
Author: Arokia Nathan
Publisher: John Wiley & Sons
ISBN: 1394202466
Category : Technology & Engineering
Languages : en
Pages : 469
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Book Description
75th Anniversary of the Transistor 75th anniversary commemorative volume reflecting the transistor's development since inception to current state of the art 75th Anniversary of the Transistor is a commemorative anniversary volume to celebrate the invention of the transistor. The anniversary volume was conceived by the IEEE Electron Devices Society (EDS) to provide comprehensive yet compact coverage of the historical perspectives underlying the invention of the transistor and its subsequent evolution into a multitude of integration and manufacturing technologies and applications. The book reflects the transistor's development since inception to the current state of the art that continues to enable scaling to very large-scale integrated circuits of higher functionality and speed. The stages in this evolution covered are in chronological order to reflect historical developments. Narratives and experiences are provided by a select number of venerated industry and academic leaders, and retired veterans, of the semiconductor industry. 75th Anniversary of the Transistor highlights: Historical perspectives of the state-of-the-art pre-solid-state-transistor world (pre-1947) leading to the invention of the transistor Invention of the bipolar junction transistor (BJT) and analytical formulations by Shockley (1948) and their impact on the semiconductor industry Large scale integration, Moore's Law (1965) and transistor scaling (1974), and MOS/LSI, including flash memories — SRAMs, DRAMs (1963), and the Toshiba NAND flash memory (1989) Image sensors (1986), including charge-coupled devices, and related microsensor applications With comprehensive yet succinct and accessible coverage of one of the cornerstones of modern technology, 75th Anniversary of the Transistor is an essential reference for engineers, researchers, and undergraduate students looking for historical perspective from leaders in the field.
Author: Rohit Dhiman
Publisher: CRC Press
ISBN: 1000777782
Category : Technology & Engineering
Languages : en
Pages : 299
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Book Description
The incessant scaling of complementary metal-oxide semiconductor (CMOS) technology has resulted in significant performance improvements in very-large-scale integration (VLSI) design techniques and system architectures. This trend is expected to continue in the future, but this requires breakthroughs in the design of nano-CMOS and post-CMOS technologies. Nanoelectronics refers to the possible future technologies beyond conventional CMOS scaling limits. This volume addresses the current state-of-the-art nanoelectronic technologies and presents potential options for next-generation integrated circuits. Nanoelectronics for Next-generation Integrated Circuits is a useful reference guide for researchers, engineers, and advanced students working on the frontier of the design and modeling of nanoelectronic devices and their integration aspects with future CMOS circuits. This comprehensive volume eloquently presents the design methodologies for spintronics memories, quantum-dot cellular automata, and post-CMOS FETs, including applications in emerging integrated circuit technologies.
