Ion Implantation Into GaN PDF Download
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Author: Sergei O. Kucheyev
Publisher:
ISBN:
Category :
Languages : en
Pages : 57
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Author: Sergei O. Kucheyev
Publisher:
ISBN:
Category :
Languages : en
Pages : 57
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Author: Emanuele Rimini
Publisher: Springer Science & Business Media
ISBN: 1461522595
Category : Technology & Engineering
Languages : en
Pages : 400
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Book Description
Ion implantation offers one of the best examples of a topic that starting from the basic research level has reached the high technology level within the framework of microelectronics. As the major or the unique procedure to selectively dope semiconductor materials for device fabrication, ion implantation takes advantage of the tremendous development of microelectronics and it evolves in a multidisciplinary frame. Physicists, chemists, materials sci entists, processing, device production, device design and ion beam engineers are all involved in this subject. The present monography deals with several aspects of ion implantation. The first chapter covers basic information on the physics of devices together with a brief description of the main trends in the field. The second chapter is devoted to ion im planters, including also high energy apparatus and a description of wafer charging and contaminants. Yield is a quite relevant is sue in the industrial surrounding and must be also discussed in the academic ambient. The slowing down of ions is treated in the third chapter both analytically and by numerical simulation meth ods. Channeling implants are described in some details in view of their relevance at the zero degree implants and of the available industrial parallel beam systems. Damage and its annealing are the key processes in ion implantation. Chapter four and five are dedicated to this extremely important subject.
Author: Sergei O. Kucheyev
Publisher:
ISBN:
Category :
Languages : en
Pages : 57
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Author: Ishaq Ahmad
Publisher: BoD – Books on Demand
ISBN: 9535132377
Category : Science
Languages : en
Pages : 154
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Book Description
Ion implantation is one of the promising areas of sciences and technologies. It has been observed as a continuously evolving technology. In this book, there is a detailed overview of the recent ion implantation research and innovation along with the existing ion implantation technological issues especially in microelectronics. The book also reviews the basic knowledge of the radiation-induced defects production during the ion implantation in case of a semiconductor structure for fabrication and development of the required perfect microelectronic devices. The improvement of the biocompatibility of biomaterials by ion implantation, which is a hot research topic, has been summarized in the book as well. Moreover, advanced materials characterization techniques are also covered in this book to evaluate the ion implantation impact on the materials.
Author: Abdul Majid
Publisher: LAP Lambert Academic Publishing
ISBN: 9783845474991
Category :
Languages : en
Pages : 168
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Book Description
A detailed and systematic study of ion implanted MOCVD grown wurtzite gallium nitride (GaN) and aluminum indium nitride (AlInN) is conducted. As-grown samples were characterized using XRD and Hall measurements to check the structural and electrical properties of the samples. Neon (Ne), manganese (Mn) and cerium (Ce) ions were implanted into the materials with different doses in ranges 1014 9x1015, 1014 5x1016 and 3x1014 2x1015cm-2 respectively. Using rapid thermal annealing (RTA) furnace implanted GaN samples were annealed at 800, 850, 900 and 1000oC and implanted AlInN samples were annealed at 750 and 850 oC for lattice recovery and activation of the dopants. Structural and optical characterizations were made using Rutherford backscattering spectroscopy (RBS), X-Ray diffraction (XRD), Photoluminescence (PL), Optical transmission and Raman scattering spectroscopy. Moreover, magnetic characterization of Mn and Ce implanted samples was also carried out with vibrating sample magnetometer (VSM) and superconducting quantum interference device (SQUID)."
Author: G. D. Jaroschenko
Publisher:
ISBN:
Category :
Languages : en
Pages :
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Author: Susumu Namba
Publisher: Springer Science & Business Media
ISBN: 1468421514
Category : Science
Languages : en
Pages : 716
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Book Description
The technique of ion implantation has become a very useful and stable technique in the field of semiconductor device fabrication. This use of ion implantation is being adopted by industry. Another important application is the fundamental study of the physical properties of materials. The First Conference on Ion Implantation in Semiconductors was held at Thousand Oaks, California in 1970. The second conference in this series was held at Garmish-Partenkirchen, Germany, in 1971. At the third conference, which convened at Yorktown Heights, New York in 1973, the emphasis was broadened to include metals and insulators as well as semiconductors. This scope of the conference was still accepted at the fourth conference which was held at Osaka, Japan, in 1974. A huge number of papers had been submitted to this conference. All papers which were presented at the Fourth International Conference on Ion Implantation in Semiconductors and Other Materials are included in this proceedings. The success of this conference was due to technical presentations and discussions of 224 participants from 14 countries as well as to financial support from many companies in Japan. On behalf of the committee, I wish to thank the authors for their excellent papers and the sponsors for their financial support. The International Committee responsible for advising this conference consisted of B.L. Crowder, J.A. Davies, G. Dearna1ey, F.H. Eisen, Ph. G1otin, T. Itoh, A.U. MacRae, J.W. Mayer, S. Namba, I. Ruge, and F.L. Vook.
Author: Geoffrey Dearnaley
Publisher: North-Holland
ISBN:
Category : Science
Languages : en
Pages : 828
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Author: James A. Fellows
Publisher:
ISBN: 9781423526537
Category : Ion implantation
Languages : en
Pages : 221
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A comprehensive and systematic electrical activation study of Si- implanted GaN was performed as a function of ion implantation dose, anneal temperature, and implantation temperature. Additionally, Mg-implanted GaN was also investigated. Temperature-dependent Hall effect measurements and photoluminescence (PL) spectra were used to characterize the samples. GaN wafers capped with AlN were implanted with Si ions at doses ranging from 1x1013 to 5x1015 cm-2 and annealed from 1050 to 1350 oC. The optimum anneal temperature for samples implanted with the higher Si doses is around 1350 oC, exhibiting nearly 100% electrical activation efficiency. Exceptional mobilities and carrier concentrations were obtained on all Si-implanted samples. PL spectra revealed nearly complete implantation damage recovery as well as the nature of the yellow luminescence plaguing nearly all Si-doped GaN. Additionally, GaN wafers were implanted with Mg and various coimplants and annealed from 1100 to 1350 oC. All of the Mg-implanted and most of the Mg-coimplanted GaN samples became extremely resistive, and did not show definite p-type conductivity even after annealing at 1350 oC, remaining highly resistive even at a sample temperature as high as 800 K. A dominant 2.36 eV green luminescence band observed in the PL spectra of all Mg-implanted samples is attributed to a Mg-related deep complex DAP transition. The inefficient electrical activation of Mg acceptors implanted into GaN is attributed to these Mg-related deep complexes.
Author: Agajan Suvkhanov
Publisher:
ISBN:
Category : Annealing of metals
Languages : en
Pages : 448
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Book Description
