Ion Beam Induced Defects and Their Effects in Oxide Materials PDF Download
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Author: Parmod Kumar
Publisher: Springer Nature
ISBN: 303093862X
Category : Science
Languages : en
Pages : 68
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Book Description
This book provides an overview of the applications of ion beam techniques in oxide materials. Oxide materials exhibit defect-induced physical properties relevant to applications in sensing, optoelectronics and spintronics. Defects in these oxide materials also lead to magnetism in non-magnetic materials or to a change of magnetic ordering in magnetic materials. Thus, an understanding of defects is of immense importance. To date, ion beam tools are considered the most effective techniques for producing controlled defects in these oxides. This book will detail the ion beam tools utilized for creating defects in oxides.
Author: Parmod Kumar
Publisher: Springer Nature
ISBN: 303093862X
Category : Science
Languages : en
Pages : 68
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Book Description
This book provides an overview of the applications of ion beam techniques in oxide materials. Oxide materials exhibit defect-induced physical properties relevant to applications in sensing, optoelectronics and spintronics. Defects in these oxide materials also lead to magnetism in non-magnetic materials or to a change of magnetic ordering in magnetic materials. Thus, an understanding of defects is of immense importance. To date, ion beam tools are considered the most effective techniques for producing controlled defects in these oxides. This book will detail the ion beam tools utilized for creating defects in oxides.
Author: J.S. Williams
Publisher: Newnes
ISBN: 0444599746
Category : Science
Languages : en
Pages : 1157
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Book Description
This conference consisted of 15 oral sessions, including three plenary papers covering areas of general interest, 22 specialist invited papers and 51 contributed presentations as well as three poster sessions. There were several scientific highlights covering a diverse spectrum of materials and ion beam processing methods. These included a wide range of conventional and novel applications such as: optical displays and opto-electronics, motor vehicle and tooling parts, coatings tailored for desired properties, studies of fundamental defect properties, the production of novel (often buried) compounds, and treating biomedical materials. The study of nanocrystals produced by ion implantation in a range of host matrices, particularly for opto-electronics applications, was one especially new and exciting development. Despite several decades of study, major progress was reported at the conference in understanding defect evolution in semiconductors and the role of defects in transient impurity diffusion. The use of implantation to tune or isolate optical devices and in forming optically active centres and waveguides in semiconductors, polymers and oxide ceramics was a major focus of several presentations at the conference. The formation of hard coatings by ion assisted deposition or direct implantation was also an area which showed much recent progress. Ion beam techniques had also developed apace, particularly those based on plasma immersion ion implantation or alternative techniques for large area surface treatment. Finally, the use of ion beams for the direct treatment of cancerous tissue was a particularly novel and interesting application of ion beams.
Author: Vijay Kumar
Publisher: Elsevier
ISBN: 0323903592
Category : Technology & Engineering
Languages : en
Pages : 758
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Book Description
Metal Oxide Defects: Fundamentals, Design, Development and Applications provides a broad perspective on the development of advanced experimental techniques to study defects and their chemical activity and catalytic reactivity in various metal oxides. This book highlights advances in characterization and analytical techniques to achieve better understanding of a wide range of defects, most importantly, state-of-the-art methodologies for controlling defects. The book provides readers with pathways to apply basic principles and interpret the behavior of metal oxides. After reviewing characterization and analytical techniques, the book focuses on the relationship of defects to the properties and performance of metal oxides. Finally, there is a review of the methods to control defects and the applications of defect engineering for the design of metal oxides for applications in optoelectronics, energy, sensing, and more. This book is a key reference for materials scientists and engineers, chemists, and physicists. - Reviews advances in characterization and analytical techniques to understand the behavior of defects in metal oxide materials - Introduces defect engineering applied to the design of metal oxide materials with desirable properties - Discusses applications of defect engineering to enhance the performance of materials for a wide range of applications, with an emphasis on optoelectronics
Author: Werner Wesch
Publisher: Springer
ISBN: 3319335618
Category : Science
Languages : en
Pages : 547
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Book Description
This book presents the method of ion beam modification of solids in realization, theory and applications in a comprehensive way. It provides a review of the physical basics of ion-solid interaction and on ion-beam induced structural modifications of solids. Ion beams are widely used to modify the physical properties of materials. A complete theory of ion stopping in matter and the calculation of the energy loss due to nuclear and electronic interactions are presented including the effect of ion channeling. To explain structural modifications due to high electronic excitations, different concepts are presented with special emphasis on the thermal spike model. Furthermore, general concepts of damage evolution as a function of ion mass, ion fluence, ion flux and temperature are described in detail and their limits and applicability are discussed. The effect of nuclear and electronic energy loss on structural modifications of solids such as damage formation, phase transitions and amorphization is reviewed for insulators and semiconductors. Finally some selected applications of ion beams are given.
Author: Parmod Kumar
Publisher: Elsevier
ISBN: 0323909086
Category : Technology & Engineering
Languages : en
Pages : 738
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Book Description
Defect-Induced Magnetism in Oxide Semiconductors provides an overview of the latest advances in defect engineering to create new magnetic materials and enable new technological applications. First, the book introduces the mechanisms, behavior, and theory of magnetism in oxide semiconductors and reviews the methods of inducing magnetism in these materials. Then, strategies such as pulsed laser deposition and RF sputtering to grow oxide nanostructured materials with induced magnetism are discussed. This is followed by a review of the most relevant postdeposition methods to induce magnetism in oxide semiconductors including annealing, ion irradiation, and ion implantation. Examples of defect-induced magnetism in oxide semiconductors are provided along with selected applications. This book is a suitable reference for academic researchers and practitioners and for people engaged in research and development in the disciplines of materials science and engineering. - Reviews the magnetic, electrical, dielectric and optical properties of oxide semiconductors with defect-induced magnetism - Discusses growth and post-deposition strategies to grow oxide nanostructured materials such as oxide thin films with defect-induced magnetism - Provides examples of materials with defect-induced magnetism such as zinc oxide, cerium dioxide, hafnium dioxide, and more
Author: Sarah Fearn
Publisher: Morgan & Claypool Publishers
ISBN: 1681740885
Category : Technology & Engineering
Languages : en
Pages : 67
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Book Description
This book highlights the application of Time-of-Flight Secondary Ion Mass Spectrometry (ToF-SIMS) for high-resolution surface analysis and characterization of materials. While providing a brief overview of the principles of SIMS, it also provides examples of how dual-beam ToF-SIMS is used to investigate a range of materials systems and properties. Over the years, SIMS instrumentation has dramatically changed since the earliest secondary ion mass spectrometers were first developed. Instruments were once dedicated to either the depth profiling of materials using high-ion-beam currents to analyse near surface to bulk regions of materials (dynamic SIMS), or time-of-flight instruments that produced complex mass spectra of the very outer-most surface of samples, using very low-beam currents (static SIMS). Now, with the development of dual-beam instruments these two very distinct fields now overlap.
Author: Hisham Z. Massoud
Publisher: The Electrochemical Society
ISBN: 9781566771306
Category : Computers
Languages : en
Pages : 686
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Book Description
Author: Boris Ildusovich Kharisov
Publisher: CRC Press
ISBN: 1466505230
Category : Science
Languages : en
Pages : 586
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Book Description
Researchers and engineers working in nuclear laboratories, nuclear electric plants, and elsewhere in the radiochemical industries need a comprehensive handbook describing all possible radiation-chemistry interactions between irradiation and materials, the preparation of materials under distinct radiation types, the possibility of damage of material
Author: Michael Nastasi
Publisher: Cambridge University Press
ISBN: 052137376X
Category : Science
Languages : en
Pages : 572
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Book Description
Comprehensive guide to an important materials science technique for students and researchers.
Author: Anthony W. Thompson
Publisher: John Wiley & Sons
ISBN: 1118803272
Category : Technology & Engineering
Languages : en
Pages : 1090
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Book Description
Proceedings of the Fifth International Conference on the Effect of Hydrogen on the Behavior of Materials sponsored by the Structural Materials Division (SMD) Mechanical Metallurgy and Corrosion & Environmental Effects Committees of The Minerals, Metals & Materials Society held at Jackson Lake Lodge, Moran, Wyoming, September 11-14, 1994.
