Investigation of Optical and Electrical Properties of Laser Deposited CdS Thin Films to be Used in Photoelectric Applications PDF Download
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Author: Atef Dedieu
Publisher:
ISBN: 9783346180612
Category :
Languages : en
Pages : 140
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Author: Atef Dedieu
Publisher:
ISBN: 9783346180612
Category :
Languages : en
Pages : 140
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Author: Cliff Orori Mosiori
Publisher: GRIN Verlag
ISBN: 3656718407
Category : Science
Languages : en
Pages : 118
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Master's Thesis from the year 2011 in the subject Physics - Applied physics, grade: A, Kenyatta University, course: Master of Science ( Physics), language: English, abstract: In this research an n-type CdxZn1-xS and p-type PbS thin films were optimised for solar cell applications employing chemical bath deposition technique. The thin films were prepared using thiourea and nitrates of cadmium, zinc and lead. Deposition of optimised CdxZn1-xS was done by CBD at 820 C and in alkaline conditions while that of PbS was done at room temperature and both films at normal atmospheric pressure utilizing aqueous conditions. This study concentrated on optimising optical and electrical characterization of the films. Optical constant suitable for photovoltaic applications were sort for and for this purpose a UV VIS IR spectrophotometer 3700 DUV was utilised while the electrical properties were investigated using a four point probe connected to a Keithley 2400 source meter interfaced with computer. The optical band gap of the as deposited CdxZn1-xS films varied from 2.47eV (x =0.6) to 2.72 eV (x =1.0), and transmittance above 79% in the VIS - NIR region for the concentration range of x = 0.6 to 1.0, that is, the band gap increased with increasing Zn concentration of the alloy and Cd06Zn0.4S sample showed the widest band gap. It was obtained that the presence of zinc increased optical band gap. The average extinction coefficients for the as deposited CdxZn1-xS samples were very low revealing that they absorb very little radiation hence a good window layer material. As measured by the four point probe connected to a Keithley 2400 source meter, electrical resistivity increased with increase in Zn in the bath in CdxZn1-xS and a resistivity range of 9.5×101 – 1.22× 102 Ω-cm was obtained. These properties are appropriate for window layers used for photovoltaic cell applications. PbS thin films had a band gap of 0.89 eV and a transmittance of below 55% appropriate for absorber layers of photovoltaic cells and a resistivity range of 6.78 × 103 to 1.26 × 104 Ω-cm. The fabricated photovoltaic cell had a short circuit current, Isc = 0.031 A, open voltage, Voc = 0.37V, efficiency, η = 0.9% and a fill factor, FF = 0.66 implying that the two materials are appropriate for photovoltaic applications especially in the VIS and IR light spectrum.
Author: Albert LeRoy Hanson
Publisher:
ISBN:
Category : Laser-plasma interactions
Languages : en
Pages : 34
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Author:
Publisher:
ISBN:
Category : Aeronautics
Languages : en
Pages : 1278
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Author: C.E. Morosanu
Publisher: Elsevier
ISBN: 1483291731
Category : Technology & Engineering
Languages : en
Pages : 720
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The explosive growth in the semiconductor industry has caused a rapid evolution of thin film materials that lend themselves to the fabrication of state-of-the-art semiconductor devices. Early in the 1960s an old research technique named chemical vapour phase deposition (CVD), which has several unique advantages, developed into the most widely used technique for thin film preparation in electronics technology. In the last 25 years, tremendous advances have been made in the science and technology of thin films prepared by means of CVD. This book presents in a single volume, an up-to-date overview of the important field of CVD processes which has never been completely reviewed previously. Contents: Part I. 1. Evolution of CVD Films. Introductory remarks. Short history of CVD thin films. II. Fundamentals. 2. Techniques of Preparing Thin Films. Electrolytic deposition techniques. Vacuum deposition techniques. Plasma deposition techniques. Liquid-phase deposition techniques. Solid-phase deposition techniques. Chemical vapour conversion of substrate. Chemical vapour deposition. Comparison between CVD and other thin film deposition techniques. 3. Chemical Processes Used in CVD. Introduction. Description of chemical reactions used in CVD. 4. Thermodynamics of CVD. Feasibility of a CVD process. Techniques for equilibrium calculations in CVD systems. Examples of thermodynamic studies of CVD systems. 5. Kinetics of CVD. Steps and control type of a CVD heterogeneous reaction. Influence of experimental parameters on thin film deposition rate. Continuous measurement of the deposition rate. Experimental methods for studying CVD kinetics. Role of homogeneous reactions in CVD. Mechanism of CVD processes. Kinetics and mechanism of dopant incorporation. Transport phenomena in CVD. Status of kinetic and mechanism investigations in CVD systems. 6. Measurement of Thin Film Thickness. Mechanical methods. Mechanical-optical methods. Optical methods. Electrical methods. Miscellaneous methods. 7. Nucleation and Growth of CVD Films. Stages in the nucleation and growth mechanism. Regimes of nucleation and growth. Nucleation theory. Dependence of nucleation on deposition parameters. Heterogeneous nucleation and CVD film structural forms. Homogeneous nucleation. Experimental techniques. Experimental results of CVD film nucleation. 8. Thin Film Structure. Techniques for studying thin film structure. Structural defects in CVD thin films. 9. Analysis of CVD Films. Analysis techniques of thin film bulk. Analysis techniques of thin film surfaces. Film composition measurement. Depth concentration profiling. 10. Properties of CVD Films. Mechanical properties. Thermal properties. Optical properties. Photoelectric properties. Electrical properties. Magnetic properties. Chemical properties. Part III. 11. Equipment and Substrates. Equipment for CVD. Safety in CVD. Substrates. 12. Preparation and Properties of Semiconducting Thin Films. Homoepitaxial semiconducting films. Heteroepitaxial semiconducting films. 13. Preparation and Properties of Amorphous Insulating Thin Films. Oxides. Nitrides and Oxynitrides. Polymeric thin films. 14. Preparation and Properties of Conductive Thin Films. Metals and metal alloys. Resistor materials. Transparent conducting films. Miscellaneous materials. 15. Preparation and Properties of Superconducting and Magnetic Thin Films. Superconducting materials. Magnetic materials. 16. Uses of CVD Thin Films. Applications in electronics and microelectronics. Applications in the field of microwaves and optoelectronics. Miscellaneous applications. Artificial heterostructures (Quantum wells, superlattices, monolayers, two-dimensional electron gases). Part V. 17. Present and Future Importance of CVD Films.
Author:
Publisher:
ISBN:
Category : Power resources
Languages : en
Pages : 756
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Author: American Ceramic Society
Publisher:
ISBN:
Category : Ceramics
Languages : en
Pages : 1000
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Author: Evan Kimberly
Publisher:
ISBN:
Category : Argon
Languages : en
Pages :
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In this research, the optical and electrical properties of cadmium stannate thin films were studied in order to determine how these properties depend on the deposition and heat treatment conditions used during film formation. Trends in band gap energy, transmittance, mobility, resistivity and carrier density were studied, as well as the growth rate and the indices of refraction and extinction. Optical data was primarily measured using variable angle spectroscopic ellipsometry. In the process of acquiring this data, a procedure for accurately determining the optical properties using variable angle spectroscopic ellipsometry was developed. Ultimately, samples achieved the highest quality when deposited in 5% atmospheric oxygen at room temperature and heat treated at 600 °C in contact with a cadmium sulfide layer in an argon atmosphere. It was found that oxygen content and film thickness may affect the heat treatment process, while temperature treatments below 600 °C will not sufficiently induce crystallization. Further study should be given to controlling the cadmium sulfide diffusion rate in order to optimize carrier density and mobility.
Author: United States. National Aeronautics and Space Administration Scientific and Technical Information Division
Publisher:
ISBN:
Category : Aeronautics
Languages : en
Pages : 2300
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Author:
Publisher:
ISBN:
Category : Aeronautics
Languages : en
Pages : 974
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