Investigation of III-Nitride Alloys for Ultraviolet Photodetectors and Blue-Green Lasers PDF Download
Are you looking for read ebook online? Search for your book and save it on your Kindle device, PC, phones or tablets. Download Investigation of III-Nitride Alloys for Ultraviolet Photodetectors and Blue-Green Lasers PDF full book. Access full book title Investigation of III-Nitride Alloys for Ultraviolet Photodetectors and Blue-Green Lasers by . Download full books in PDF and EPUB format.
Author:
Publisher:
ISBN:
Category :
Languages : en
Pages : 29
Get Book Here
Book Description
This AASERT contract was intended to support one graduate and one undergraduate students for three years, with the objective of conducting research work on the growth and characterization of wide bandgap GaN based semiconductors for ultraviolet photodetectors and visible light emitters. The research was directed toward optimizing the metalorganic chemical vapor deposition (MOCVD) growth and characterization of undoped, n-type and p-type doped wide bandgap GaN and AlxGa1-xN semiconductors, for x ranging from 0 to 1, on sapphire substrates. The optical and electrical properties of GaN grown using two different organometallic precursors, TMGa and TEGa, have been compared. The fabrication and characterization of GaN and GaN:Mg MSM photodetectors, with high speed and visible rejection is reported. GaN p-i-n photodiodes with a UV-to- visible rejection ratio of 6 orders of magnitude were demonstrated. The responsivity of these devices was analytically modeled and allowed the extraction of the minority carrier diffusion length for electrons in the p-type GaN material. Highly efficient AlxGa1-xN based visible blind and solar blind p-i-n photodiodes have been demonstrated which cover the widest spectral range ever reported, form 225 to 362 nm. By varying the doping of the GaInN active layer in GaInN/GaN double heterostructures, blue (525 nm) and green (560 nm) light emitting diodes were demonstrated and characterized.
Author:
Publisher:
ISBN:
Category :
Languages : en
Pages : 29
Get Book Here
Book Description
This AASERT contract was intended to support one graduate and one undergraduate students for three years, with the objective of conducting research work on the growth and characterization of wide bandgap GaN based semiconductors for ultraviolet photodetectors and visible light emitters. The research was directed toward optimizing the metalorganic chemical vapor deposition (MOCVD) growth and characterization of undoped, n-type and p-type doped wide bandgap GaN and AlxGa1-xN semiconductors, for x ranging from 0 to 1, on sapphire substrates. The optical and electrical properties of GaN grown using two different organometallic precursors, TMGa and TEGa, have been compared. The fabrication and characterization of GaN and GaN:Mg MSM photodetectors, with high speed and visible rejection is reported. GaN p-i-n photodiodes with a UV-to- visible rejection ratio of 6 orders of magnitude were demonstrated. The responsivity of these devices was analytically modeled and allowed the extraction of the minority carrier diffusion length for electrons in the p-type GaN material. Highly efficient AlxGa1-xN based visible blind and solar blind p-i-n photodiodes have been demonstrated which cover the widest spectral range ever reported, form 225 to 362 nm. By varying the doping of the GaInN active layer in GaInN/GaN double heterostructures, blue (525 nm) and green (560 nm) light emitting diodes were demonstrated and characterized.
Author: M Razeghi
Publisher: Elsevier
ISBN: 9780080444260
Category : Science
Languages : en
Pages : 602
Get Book Here
Book Description
Tremendous progress has been made in the last few years in the growth, doping and processing technologies of the wide bandgap semiconductors. As a result, this class of materials now holds significant promis for semiconductor electronics in a broad range of applications. The principal driver for the current revival of interest in III-V Nitrides is their potential use in high power, high temperature, high frequency and optical devices resistant to radiation damage. This book provides a wide number of optoelectronic applications of III-V nitrides and covers the entire process from growth to devices and applications making it essential reading for those working in the semiconductors or microelectronics. Broad review of optoelectronic applications of III-V nitrides
Author: Zhe Chuan Feng
Publisher: World Scientific
ISBN: 1786343207
Category : Science
Languages : en
Pages : 424
Get Book Here
Book Description
Group III-Nitrides semiconductor materials, including GaN, InN, AlN, InGaN, AlGaN and AlInGaN, i.e. (Al, In, Ga)N, are excellent semiconductors, covering the spectral range from deep ultraviolet (DUV) to UV, visible and infrared, with unique properties very suitable for modern electronic and optoelectronic applications. Remarkable breakthroughs have been achieved in recent years for research and development (R&D) in these materials and devices, such as high-power and high brightness UV-blue-green-white light emitting diodes (LEDs), UV-blue-green laser diodes (LDs), photo-detectors and various optoelectronics and electronics devices and applications.The Nobel Prize in Physics 2014 was awarded jointly to Isamu Akasaki, Hiroshi Amano and Shuji Nakamura 'for the invention of efficient blue light-emitting diodes which has enabled bright and energy-saving white light sources'. Red and green diodes had been invented since 1960s-70s but without blue LED. Despite considerable efforts, the blue LED had remained a challenge for a long time. The success and inventions on GaN-based LEDs were revolutionary and benefiting for mankind. III-Nitrides-based industry has formed and acquired rapid developments over the world. Incandescent light bulbs lit the 20th century and the 21st century will be lit by LED lamps.Before this book, the editor has edited two books, III-Nitride Semiconductor Materials (2006) and III-Nitride Devices and Nanoengineering (2008), both published by ICP/WSP, in the fields of III-Nitride. The developments of these materials and devices are moving rapidly. Many data or knowledge, some even just published only recently, have been modified and needed to be upgraded. This new book, III-Nitride Materials, Devices and Nano-Structures as the third instalment, will cover the rapid new developments and achievements in the III-Nitride fields, particularly those made since 2009.
Author: Edward T. Yu
Publisher: CRC Press
ISBN: 1000715957
Category : Technology & Engineering
Languages : en
Pages : 715
Get Book Here
Book Description
The concepts in this book will provide a comprehensive overview of the current state for a broad range of nitride semiconductor devices, as well as a detailed introduction to selected materials and processing issues of general relevance for these applications. This compilation is very timely given the level of interest and the current stage of research in nitride semiconductor materials and device applications. This volume consists of chapters written by a number of leading researchers in nitride materials and device technology addressing Ohmic and Schottky contacts, AIGalnN multiple quantum well laser diodes, nitride vertical cavity emitting lasers, and ultraviolet photodetectors. This unique volume provides a comprehensive review and introduction to application and devices based on GaN and related compounds for newcomers to the field and stimulus to further advances for experienced researchers.
Author: Akihiko Yoshikawa
Publisher: IOS Press
ISBN:
Category : Science
Languages : en
Pages : 608
Get Book Here
Book Description
Realization of the semiconductor laser diodes (LDs) operating in the blue wavelength region had been a 'dream' for a long time for the scientists working on widegap materials until just a few years ago. Quite remarkable progress has been made in the last few years the dream has come true. The first ZnSe-based blue/green LD was fabricated about four years ago and its officially reported life-time in CW operation exceeds 100 hours now; it is quickly approaching a practical use level. Further, GaN-based blue LDs have also been realized. In this way, the progress in these research fields is quite rapid. The work includes articles on bulk growth, epitaxy, doping and characterization, blue LDs and LEDs, and future prospects in both ZnSe-based and GaN-based areas.
Author: Laxman Raju Thoutam
Publisher: Springer Nature
ISBN: 9811913129
Category : Science
Languages : en
Pages : 472
Get Book Here
Book Description
This book serves as a quick guide on the latest material systems including their synthesis, fabrication and characterization techniques. It discusses recent developments in different material systems and discusses their novel applications in various branches of science and engineering. The book briefs latest computational tools and techniques that are used to discover new material systems. The book also briefs applications of new emerging materials in various fields including, healthcare, sensors, opto-electronics, high power devices and nano-electronics. This book helps to create a synergy between computational and experimental research methods to better understand a particular material system.
Author: Yuan Lin
Publisher: John Wiley & Sons
ISBN: 3527340254
Category : Technology & Engineering
Languages : en
Pages : 328
Get Book Here
Book Description
This concise reference summarizes the latest results in nano-structured thin films, the first to discuss both deposition methods and electronic applications in detail. Following an introduction to this rapidly developing field, the authors present a variety of organic and inorganic materials along with new deposition techniques, and conclude with an overview of applications and considerations for their technology deployment.
Author: Yu-Lun Chueh
Publisher: The Electrochemical Society
ISBN: 1607686775
Category :
Languages : en
Pages : 113
Get Book Here
Book Description
Author: Zhe Chuan Feng
Publisher: World Scientific
ISBN: 1848162235
Category : Technology & Engineering
Languages : en
Pages : 477
Get Book Here
Book Description
Devices, nanoscale science and technologies based on GaN and related materials, have achieved great developments in recent years. New GaN-based devices such as UV detectors, fast p-HEMT and microwave devices are developed far more superior than other semiconductor materials-based devices.Written by renowned experts, the review chapters in this book cover the most important topics and achievements in recent years, discuss progress made by different groups, and suggest future directions. Each chapter also describes the basis of theory and experiment.This book is an invaluable resource for device design and processing engineers, material growers and evaluators, postgraduates and scientists as well as newcomers in the GaN field.
Author:
Publisher:
ISBN:
Category : Electroluminescent devices
Languages : en
Pages : 1018
Get Book Here
Book Description
