Integration and Characterization of Atomic Layer Deposited TiO2 Thin Films for Resistive Switching Applications PDF Download
Are you looking for read ebook online? Search for your book and save it on your Kindle device, PC, phones or tablets. Download Integration and Characterization of Atomic Layer Deposited TiO2 Thin Films for Resistive Switching Applications PDF full book. Access full book title Integration and Characterization of Atomic Layer Deposited TiO2 Thin Films for Resistive Switching Applications by Marcel Reiners. Download full books in PDF and EPUB format.
Author: Marcel Reiners
Publisher:
ISBN: 9783893369706
Category :
Languages : en
Pages : 166
Get Book Here
Book Description
Author: Marcel Reiners
Publisher:
ISBN: 9783893369706
Category :
Languages : en
Pages : 166
Get Book Here
Book Description
Author: Lin Yang
Publisher: Forschungszentrum Jülich
ISBN: 3893367071
Category :
Languages : en
Pages : 141
Get Book Here
Book Description
Author: Irina Kärkkänen
Publisher: Forschungszentrum Jülich
ISBN: 3893369716
Category :
Languages : en
Pages : 151
Get Book Here
Book Description
Author: Francesco Parrino
Publisher: Elsevier
ISBN: 0128204346
Category : Technology & Engineering
Languages : en
Pages : 735
Get Book Here
Book Description
Scientific interest in TiO2-based materials has exponentially grown in the last few decades. Titanium Dioxide (TiO2) and Its Applications introduces the main physicochemical properties of TiO2 which are the basis of its applications in various fields. While the basic principles of the TiO2 properties have been the subject of various previous publications, this book is mainly devoted to TiO2 applications. The book includes contributions written by experts from a wide range of disciplines in order to address titanium dioxide's utilization in energy, consumer, materials, devices, and catalytic applications. The various applications identified include: photocatalysis, catalysis, optics, electronics, energy storage and production, ceramics, pigments, cosmetics, sensors, and heat transfer. Titanium Dioxide (TiO2) and Its Applications is suitable for a wide readership in the disciplines of materials science, chemistry, and engineering in both academia and industry. Includes a wide range of current and emerging applications of titanium dioxide in the fields of energy, consumer applications, materials, and devices Provides a brief overview of titanium dioxide and its properties, as well as techniques to design, deposit, and study the material Discusses the relevant properties, preparation methods, and other apposite considerations in each application-focused chapter
Author: Ali Mahmoodinezhad
Publisher:
ISBN:
Category :
Languages : en
Pages : 0
Get Book Here
Book Description
Author: Cheol Seong Hwang
Publisher: Springer Science & Business Media
ISBN: 146148054X
Category : Science
Languages : en
Pages : 266
Get Book Here
Book Description
Offering thorough coverage of atomic layer deposition (ALD), this book moves from basic chemistry of ALD and modeling of processes to examine ALD in memory, logic devices and machines. Reviews history, operating principles and ALD processes for each device.
Author: Rungthiwa Methaapanon
Publisher:
ISBN:
Category :
Languages : en
Pages :
Get Book Here
Book Description
The demand of smaller, higher capacity and higher performance devices in microelectronics has driven the necessity of uniform, conformal, and pinhole-free thin film production. Furthermore, the design toward more complex structures and higher aspect ratios requires the processes to be highly controllable, down to the nanoscale. Atomic layer deposition (ALD) is a powerful technique that produces thin films with these desired properties, through a series of alternating self-limited surface reactions. The self-saturated nature of the technique allows for precise thickness control at the atomic scale. Despite increasing interest in ALD, there is still a lack of understanding of the mechanisms behind the process at a molecular level. The nucleation and growth fundamentals are crucial for better control and development of the process and, hence, need to be systematically studied. Due to the vulnerability of the reactions to ambient conditions, ex situ analysis techniques alone may not provide complete information on the surface chemistries needed to elucidate the mechanisms governing the processes. In situ analysis techniques, which allow surface investigation without disruption from contaminants and other species, are required. Therefore, in this work we have designed and constructed various in situ systems for this purpose. The in situ systems are ALD reactors integrated with different analysis tools, able to operate as fully functional deposition system so as to replicate the actual conditions of typical ALD reactors. Through in situ X-ray photoelectron spectroscopy (XPS), we studied ALD of TiO2 at 100 °C using titanium tetrachloride (TiCl4) and water (H2O) on two different surfaces. The initial growth rate on hydroxyl-enriched silicon dioxide (SiO2) is found to be higher than on hydrogen-terminated silicon. The XPS results provide evidence of Si-O-Ti bonds on the SiO2 surface and Si-Ti bonds on the hydrogen-terminated Si surface, without a trace of interfacial oxide. However, a silicon oxide layer forms at the interface between Si and TiO2 after vacuum annealing, concurrent with the reduction of TiO2. The results hence suggest TiO2 as an oxygen source for silicon oxidation under these conditions. In addition, we studied ruthenium thermal ALD using a new precursor, bis(2,4-dimethylpentadienyl) ruthenium, and oxygen. The process is achievable at a low operating temperature of 185 °C. Variation in the exposure time and pressure of oxygen has significant effects on the nucleation, growth rate and composition of the deposited ruthenium films. We propose that the subsurface oxygen formation, which involves slow diffusion of oxygen, is a rate-limiting step in the RuO2 formation process. The crystal growth and structures of Ru and RuO2 deposited on amorphous SiO2 by the same ALD process were measured by ex situ and in situ synchrotron X-ray diffraction. Interestingly, in situ XRD studies reveal that RuO2 films initially nucleate as metallic Ru crystallites. The hindered formation of subsurface oxygen in small nanocrystals is hypothesized as the cause that prohibits the growth of the initial oxide. Although metallic ruthenium films are textured with a (002) preference in the growth direction, RuO2 films nucleating on the metallic Ru nanoparticles have no preferential orientation. We also studied surface chemistries of Ru reactions during half ALD cycles via in situ synchrotron photoemission spectroscopy (PES). After long oxygen exposures, Ru oxide and carbon-oxygen species, which localize near the top surface, were detected. The peak intensities of these species noticeably decreased after reaction with the Ru precursor, indicating the reactions of Ru precursor with both O-Ru and O-C species. In brief, we fabricated and utilized in situ ALD/analysis systems, together with ex situ analysis tools, for studies of TiO2 ALD and Ru/RuO2 ALD. The studies not only demonstrate the power of the in situ systems for mechanistic studies, but also provide information on possible bond formation, surface reactions, and nucleation and growth mechanisms in the ALD processes.
Author: Heba Abunahla
Publisher: Springer
ISBN: 3319656996
Category : Technology & Engineering
Languages : en
Pages : 118
Get Book Here
Book Description
This book provides readers with a single-source guide to fabricate, characterize and model memristor devices for sensing applications. The authors describe a correlated, physics-based model to simulate and predict the behavior of devices fabricated with different oxide materials, active layer thickness, and operating temperature. They discuss memristors from various perspectives, including working mechanisms, different synthesis methods, characterization procedures, and device employment in radiation sensing and security applications.
Author: Gül Dogan
Publisher:
ISBN:
Category :
Languages : en
Pages : 0
Get Book Here
Book Description
Author: P. Shen
Publisher:
ISBN:
Category :
Languages : en
Pages : 5
Get Book Here
Book Description
Spin-on deposited Sio2-TiO2 thin films (pure and doped with dyes) are produced. Their optical and mechanical properties are determined and their use for a number of applications is investigated. The spin-on deposited SiO2 film has been successfully doped with coumarin as a colour center and characterized as a waveguide overlay. Solution deposited thin films of silicon and titanium dioxide, and their mixtures, are suitable for a number of applications such as antireflection coating and waveguides for integrated optics. Both dipping and spinning methods can be used to obtain good quality films 1 2. For the dipping process, processing standardization ensures good reproducibility of refractive index and thickness 1. In this paper, we use a spin-on and baking process to produce pure and doped SiO2 and TiO2 films and we study some of their optical and mechanical properties. The solution we used is commercially available E. Merck liquicoat solutions 3. They are metal alkoxide colloidal solutions containing 7% and 9% SiO2 and TiO2 respectively. By varying the volume ratio of the two component solutions, films of various thickness (80-250 nm) and refractive index (1.4-2.0) can be obtained. We used 0.02 inch thick P-doped 100 silicon, Coming 0211 glass, and 1 mm thick Fisher microscope slides as three substrate materials. We use standard silicon and glass cleaning procedures and carried out the film deposition in a class 100 clean room. The solution were mixed immediately before coating to ensure.
