In-Situ Studies of the Growth of Amorphous and Microcrystalline Silicon Using Real-Time Spectroscopic Ellipsometry PDF Download
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Author:
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ISBN:
Category :
Languages : en
Pages : 7
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Book Description
Real-time, in-situ characterization of hot-wire chemical vapor deposition (HWCVD) growth of hydrogenated silicon (Si:H) thin films offers unique insight into the properties of the materials and mechanisms of their growth. We have used in-situ spectroscopic ellipsometry to characterize Si:H crystallinity as a function of film thickness and deposition conditions. We find that the transition from amorphous to microcrystalline growth is a strong function of film thickness and hydrogen dilution, and a weak function of substrate temperature. We have expressed this information in terms of a color-coded phase-space map of the amorphous to microcrystalline transition in HWCVD growth on crystalline Si substrates.
Author:
Publisher:
ISBN:
Category :
Languages : en
Pages : 7
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Book Description
Real-time, in-situ characterization of hot-wire chemical vapor deposition (HWCVD) growth of hydrogenated silicon (Si:H) thin films offers unique insight into the properties of the materials and mechanisms of their growth. We have used in-situ spectroscopic ellipsometry to characterize Si:H crystallinity as a function of film thickness and deposition conditions. We find that the transition from amorphous to microcrystalline growth is a strong function of film thickness and hydrogen dilution, and a weak function of substrate temperature. We have expressed this information in terms of a color-coded phase-space map of the amorphous to microcrystalline transition in HWCVD growth on crystalline Si substrates.
Author: Hiroyuki Fujiwara
Publisher: John Wiley & Sons
ISBN: 9780470060186
Category : Technology & Engineering
Languages : en
Pages : 388
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Book Description
Ellipsometry is a powerful tool used for the characterization of thin films and multi-layer semiconductor structures. This book deals with fundamental principles and applications of spectroscopic ellipsometry (SE). Beginning with an overview of SE technologies the text moves on to focus on the data analysis of results obtained from SE, Fundamental data analyses, principles and physical backgrounds and the various materials used in different fields from LSI industry to biotechnology are described. The final chapter describes the latest developments of real-time monitoring and process control which have attracted significant attention in various scientific and industrial fields.
Author: Gertjan Koster
Publisher: Elsevier
ISBN: 0857094955
Category : Technology & Engineering
Languages : en
Pages : 295
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Book Description
Advanced techniques for characterizing thin film growth in situ help to develop improved understanding and faster diagnosis of issues with the process. In situ characterization of thin film growth reviews current and developing techniques for characterizing the growth of thin films, covering an important gap in research. Part one covers electron diffraction techniques for in situ study of thin film growth, including chapters on topics such as reflection high-energy electron diffraction (RHEED) and inelastic scattering techniques. Part two focuses on photoemission techniques, with chapters covering ultraviolet photoemission spectroscopy (UPS), X-ray photoelectron spectroscopy (XPS) and in situ spectroscopic ellipsometry for characterization of thin film growth. Finally, part three discusses alternative in situ characterization techniques. Chapters focus on topics such as ion beam surface characterization, real time in situ surface monitoring of thin film growth, deposition vapour monitoring and the use of surface x-ray diffraction for studying epitaxial film growth. With its distinguished editors and international team of contributors, In situ characterization of thin film growth is a standard reference for materials scientists and engineers in the electronics and photonics industries, as well as all those with an academic research interest in this area. Chapters review electron diffraction techniques, including the methodology for observations and measurements Discusses the principles and applications of photoemission techniques Examines alternative in situ characterisation techniques
Author: Yue Kuo
Publisher: Springer Science & Business Media
ISBN: 9781402075056
Category : Thin film transistors
Languages : en
Pages : 538
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Book Description
This is the first reference on amorphous silicon and polycrystalline silicon thin film transistors that gives a systematic global review of all major topics in the field. These volumes include sections on basic materials and substrates properties, fundamental device physics, critical fabrication processes (structures, a-Si: H, dielectric, metallization, catalytic CVD), and existing and new applications. The chapters are written by leading researchers who have extensive experience with reputed track records. Thin Film Transistors provides practical information on preparing individual functional a-Si: H TFTs and poly-Si TFTs as well as large-area TFT arrays. Also covered are basic theories on the a-Si: H TFT operations and unique material characteristics. Readers are also exposed to a wide range of existing and new applications in industries.
Author: Prashant Kumta
Publisher: Elsevier
ISBN: 0323851819
Category : Technology & Engineering
Languages : en
Pages : 538
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Book Description
Silicon Anode Systems for Lithium-Ion Batteries is an introduction to silicon anodes as an alternative to traditional graphite-based anodes. The book provides a comprehensive overview including abundance, system voltage, and capacity. It provides key insights into the basic challenges faced by the materials system such as new configurations and concepts for overcoming the expansion and contraction related problems. This book has been written for the practitioner, researcher or developer of commercial technologies. - Provides a thorough explanation of the advantages, challenge, materials science, and commercial prospects of silicon and related anode materials for lithium-ion batteries - Provides insights into practical issues including processing and performance of advanced Si-based materials in battery-relevant materials systems - Discusses suppressants in electrolytes to minimize adverse effects of solid electrolyte interphase (SEI) formation and safety limitations associated with this technology
Author: Monica Katiyar
Publisher:
ISBN:
Category :
Languages : en
Pages : 258
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Book Description
A new, optically enhanced reflection infrared spectroscopy technique is presented to study thin film growth in real time. Here, real time means under actual processing conditions, with a short data acquisition time compared to film changes or growth rates. This technique has industrial application in monitoring and controlling processes which involve a large or complex parameter space. These include interface control and the fundamentals of crystal growth, plasma deposition, and etching. These applications are illustrated in the thesis by studying the deposition of hydrogenated amorphous silicon (a-Si:H), microcrystalline silicon ($mu$c-Si:H), and hydrogenated amorphous silicon carbide $rm (a-Sisb{1-x}Csb{x}$:H) thin films by reactive magnetron sputtering. Complimentary information about the film microstructure is obtained from real time spectroscopic ellipsometry measurements. For a-Si:H growth, we present the first detailed and quantitative set of experimental data on hydrogen incorporation and release processes. The absorption due to the stretching modes of Si-H bonds (1800-2300 cm$sp{-1}$) is used to quantify the increase or loss of H during film growth. A narrow component at $sim$2100 cm$sp{-1}$ corresponding to all SiH$sb{rm X}$ bonds on the physical surface is identified for the first time; the line width of this mode is used to distinguish signals from the bulk and the surface. Various combinations of growth flux (isotope labelling, hydrogen partial pressure between 0.1 and 2.0 mTorr) and substrate material (on SiO$sb2$, a-Si, or a-Si:D) at substrate temperatures between 120 to 350$spcirc$C are used to quantify surface hydrogen coverage, hydrogen implantation, and H removal from surface and sub-surface. We analyze the growth of $mu$c-Si:H on SiO$sb2$ substrate; no evidence of etching during $mu$c-Si deposition is found. We also study the phase transformation of amorphous to microcrystalline silicon when an a-Si film is exposed to a pure H$sb2$ plasma. The a-Si is first heavily hydrogenated and then transforms to $mu$c-Si with a concomitant decrease in H content. During a-Si$rmsb{1-x}$C$rmsb{x}$:H growth, a transition layer rich in hydrogen and carbon is observed between the film and the substrate; steady state growth is not achieved until $>$250 on A SiO$sb2$, and $sim$70 A on a-Si:H substrates.
Author: Zexian Cao
Publisher: Elsevier
ISBN: 0857093290
Category : Technology & Engineering
Languages : en
Pages : 433
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Book Description
Thin film technology is used in many applications such as microelectronics, optics, hard and corrosion resistant coatings and micromechanics, and thin films form a uniquely versatile material base for the development of novel technologies within these industries. Thin film growth provides an important and up-to-date review of the theory and deposition techniques used in the formation of thin films.Part one focuses on the theory of thin film growth, with chapters covering nucleation and growth processes in thin films, phase-field modelling of thin film growth and surface roughness evolution. Part two covers some of the techniques used for thin film growth, including oblique angle deposition, reactive magnetron sputtering and epitaxial growth of graphene films on single crystal metal surfaces. This section also includes chapters on the properties of thin films, covering topics such as substrate plasticity and buckling of thin films, polarity control, nanostructure growth dynamics and network behaviour in thin films.With its distinguished editor and international team of contributors, Thin film growth is an essential reference for engineers in electronics, energy materials and mechanical engineering, as well as those with an academic research interest in the topic. - Provides an important and up-to-date review of the theory and deposition techniques used in the formation of thin films - Focusses on the theory and modelling of thin film growth, techniques and mechanisms used for thin film growth and properties of thin films - An essential reference for engineers in electronics, energy materials and mechanical engineering
Author:
Publisher:
ISBN:
Category : Amorphous semiconductors
Languages : en
Pages : 1046
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Book Description
Author: Jef Poortmans
Publisher: John Wiley & Sons
ISBN: 0470091266
Category : Science
Languages : en
Pages : 504
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Book Description
Thin-film solar cells are either emerging or about to emerge from the research laboratory to become commercially available devices finding practical various applications. Currently no textbook outlining the basic theoretical background, methods of fabrication and applications currently exist. Thus, this book aims to present for the first time an in-depth overview of this topic covering a broad range of thin-film solar cell technologies including both organic and inorganic materials, presented in a systematic fashion, by the scientific leaders in the respective domains. It covers a broad range of related topics, from physical principles to design, fabrication, characterization, and applications of novel photovoltaic devices.
Author:
Publisher:
ISBN:
Category : Amorphous semiconductors
Languages : en
Pages : 760
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Book Description
