In Situ Optical Characterization and Control of Epitaxial III-V Crystal Growth PDF Download
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Author: W. E. Quinn
Publisher:
ISBN:
Category :
Languages : en
Pages : 4
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Book Description
Device designers are placing new demands on crystal growers by requesting increasingly complex structures with more stringent constraints on composition, layer thickness and interface abruptness. Post growth analysis is no longer sufficient to meet these constraints and efforts are now underway to develop real lime methods of monitoring and controlling crystal growth. A number of diagnostic techniques are available for studying semiconductor surfaces during the growth process. Optical methods are preferred because they may be used at atmospheric pressure, in any transparent medium, and the photon flux is low so that the growth process is riot disturbed. However, optical techniques have a limited spectral range, and low surface sensitivity. Fortunately, the 1.5 to 6 eV energy range of quartz-optics systems contains most of the bonding-antibonding transitions for materials used in the growth of III-V semiconductors.
Author: W. E. Quinn
Publisher:
ISBN:
Category :
Languages : en
Pages : 4
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Book Description
Device designers are placing new demands on crystal growers by requesting increasingly complex structures with more stringent constraints on composition, layer thickness and interface abruptness. Post growth analysis is no longer sufficient to meet these constraints and efforts are now underway to develop real lime methods of monitoring and controlling crystal growth. A number of diagnostic techniques are available for studying semiconductor surfaces during the growth process. Optical methods are preferred because they may be used at atmospheric pressure, in any transparent medium, and the photon flux is low so that the growth process is riot disturbed. However, optical techniques have a limited spectral range, and low surface sensitivity. Fortunately, the 1.5 to 6 eV energy range of quartz-optics systems contains most of the bonding-antibonding transitions for materials used in the growth of III-V semiconductors.
Author: Tom Kuech
Publisher: Elsevier
ISBN: 0444633057
Category : Science
Languages : en
Pages : 1384
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Book Description
Volume IIIA Basic Techniques Handbook of Crystal Growth, Second Edition Volume IIIA (Basic Techniques), edited by chemical and biological engineering expert Thomas F. Kuech, presents the underpinning science and technology associated with epitaxial growth as well as highlighting many of the chief and burgeoning areas for epitaxial growth. Volume IIIA focuses on major growth techniques which are used both in the scientific investigation of crystal growth processes and commercial development of advanced epitaxial structures. Techniques based on vacuum deposition, vapor phase epitaxy, and liquid and solid phase epitaxy are presented along with new techniques for the development of three-dimensional nano-and micro-structures. Volume IIIB Materials, Processes, and Technology Handbook of Crystal Growth, Second Edition Volume IIIB (Materials, Processes, and Technology), edited by chemical and biological engineering expert Thomas F. Kuech, describes both specific techniques for epitaxial growth as well as an array of materials-specific growth processes. The volume begins by presenting variations on epitaxial growth process where the kinetic processes are used to develop new types of materials at low temperatures. Optical and physical characterizations of epitaxial films are discussed for both in situ and exit to characterization of epitaxial materials. The remainder of the volume presents both the epitaxial growth processes associated with key technology materials as well as unique structures such as monolayer and two dimensional materials. Volume IIIA Basic Techniques Provides an introduction to the chief epitaxial growth processes and the underpinning scientific concepts used to understand and develop new processes. Presents new techniques and technologies for the development of three-dimensional structures such as quantum dots, nano-wires, rods and patterned growth Introduces and utilizes basic concepts of thermodynamics, transport, and a wide cross-section of kinetic processes which form the atomic level text of growth process Volume IIIB Materials, Processes, and Technology Describes atomic level epitaxial deposition and other low temperature growth techniques Presents both the development of thermal and lattice mismatched streams as the techniques used to characterize the structural properties of these materials Presents in-depth discussion of the epitaxial growth techniques associated with silicone silicone-based materials, compound semiconductors, semiconducting nitrides, and refractory materials
Author: Günther Bauer
Publisher: Springer Science & Business Media
ISBN: 3642796788
Category : Technology & Engineering
Languages : en
Pages : 446
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Book Description
The characterization of epitaxial layers and their surfaces has benefitted a lot from the enormous progress of optical analysis techniques during the last decade. In particular, the dramatic improvement of the structural quality of semiconductor epilayers and heterostructures results to a great deal from the level of sophistication achieved with such analysis techniques. First of all, optical techniques are nondestructive and their sensitivity has been improved to such an extent that nowadays the epilayer analysis can be performed on layers with thicknesses on the atomic scale. Furthermore, the spatial and temporal resolution have been pushed to such limits that real time observation of surface processes during epitaxial growth is possible with techniques like reflectance difference spectroscopy. Of course, optical spectroscopies complement techniques based on the inter action of electrons with matter, but whereas the latter usually require high or ultrahigh vacuum conditions, the former ones can be applied in different environments as well. This advantage could turn out extremely important for a rather technological point of view, i.e. for the surveillance of modern semiconductor processes. Despite the large potential of techniques based on the interaction of electromagnetic waves with surfaces and epilayers, optical techniques are apparently moving only slowly into this area of technology. One reason for this might be that some prejudices still exist regarding their sensitivity.
Author: Holloway
Publisher: American Institute of Physics
ISBN:
Category : Science
Languages : en
Pages : 252
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Book Description
Author: Udo W. Pohl
Publisher: Springer Nature
ISBN: 3030438694
Category : Technology & Engineering
Languages : en
Pages : 546
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Book Description
The extended and revised edition of this textbook provides essential information for a comprehensive upper-level graduate course on the crystalline growth of semiconductor heterostructures. Heteroepitaxy is the basis of today’s advanced electronic and optoelectronic devices, and it is considered one of the most important fields in materials research and nanotechnology. The book discusses the structural and electronic properties of strained epitaxial layers, the thermodynamics and kinetics of layer growth, and it describes the major growth techniques: metalorganic vapor-phase epitaxy, molecular-beam epitaxy, and liquid-phase epitaxy. It also examines in detail cubic and hexagonal semiconductors, strain relaxation by misfit dislocations, strain and confinement effects on electronic states, surface structures, and processes during nucleation and growth. Requiring only minimal knowledge of solid-state physics, it provides natural sciences, materials science and electrical engineering students and their lecturers elementary introductions to the theory and practice of epitaxial growth, supported by references and over 300 detailed illustrations. In this second edition, many topics have been extended and treated in more detail, e.g. in situ growth monitoring, application of surfactants, properties of dislocations and defects in organic crystals, and special growth techniques like vapor-liquid-solid growth of nanowires and selective-area epitaxy.
Author: Gertjan Koster
Publisher: Elsevier
ISBN: 0857094955
Category : Technology & Engineering
Languages : en
Pages : 295
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Book Description
Advanced techniques for characterizing thin film growth in situ help to develop improved understanding and faster diagnosis of issues with the process. In situ characterization of thin film growth reviews current and developing techniques for characterizing the growth of thin films, covering an important gap in research. Part one covers electron diffraction techniques for in situ study of thin film growth, including chapters on topics such as reflection high-energy electron diffraction (RHEED) and inelastic scattering techniques. Part two focuses on photoemission techniques, with chapters covering ultraviolet photoemission spectroscopy (UPS), X-ray photoelectron spectroscopy (XPS) and in situ spectroscopic ellipsometry for characterization of thin film growth. Finally, part three discusses alternative in situ characterization techniques. Chapters focus on topics such as ion beam surface characterization, real time in situ surface monitoring of thin film growth, deposition vapour monitoring and the use of surface x-ray diffraction for studying epitaxial film growth. With its distinguished editors and international team of contributors, In situ characterization of thin film growth is a standard reference for materials scientists and engineers in the electronics and photonics industries, as well as all those with an academic research interest in this area. Chapters review electron diffraction techniques, including the methodology for observations and measurements Discusses the principles and applications of photoemission techniques Examines alternative in situ characterisation techniques
Author: Theodore Sidney Moise
Publisher:
ISBN:
Category :
Languages : en
Pages :
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Book Description
Author:
Publisher: Academic Press
ISBN: 0080864376
Category : Science
Languages : en
Pages : 457
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Book Description
Newly developed semiconductor microstructures can now guide light and electrons resulting in important consequences for state-of-the-art electronic and photonic devices. This volume introduces a new generation of epitaxial microstructures. Special emphasis has been given to atomic control during growth and the interrelationship between the atomic arrangements and the properties of the structures. Atomic-level control of semiconductor microstructures Molecular beam epitaxy, metal-organic chemical vapor deposition Quantum wells and quantum wires Lasers, photon(IR)detectors, heterostructure transistors
Author:
Publisher:
ISBN:
Category : Physics
Languages : en
Pages : 1058
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Book Description
Author: John E. Ayers
Publisher: CRC Press
ISBN: 135183780X
Category : Technology & Engineering
Languages : en
Pages : 356
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Book Description
Heteroepitaxy has evolved rapidly in recent years. With each new wave of material/substrate combinations, our understanding of how to control crystal growth becomes more refined. Most books on the subject focus on a specific material or material family, narrowly explaining the processes and techniques appropriate for each. Surveying the principles common to all types of semiconductor materials, Heteroepitaxy of Semiconductors: Theory, Growth, and Characterization is the first comprehensive, fundamental introduction to the field. This book reflects our current understanding of nucleation, growth modes, relaxation of strained layers, and dislocation dynamics without emphasizing any particular material. Following an overview of the properties of semiconductors, the author introduces the important heteroepitaxial growth methods and provides a survey of semiconductor crystal surfaces, their structures, and nucleation. With this foundation, the book provides in-depth descriptions of mismatched heteroepitaxy and lattice strain relaxation, various characterization tools used to monitor and evaluate the growth process, and finally, defect engineering approaches. Numerous examples highlight the concepts while extensive micrographs, schematics of experimental setups, and graphs illustrate the discussion. Serving as a solid starting point for this rapidly evolving area, Heteroepitaxy of Semiconductors: Theory, Growth, and Characterization makes the principles of heteroepitaxy easily accessible to anyone preparing to enter the field.
