Improved Techniques for the Growth of High Quality Cadmium Telluride Crystals PDF Download
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Author: R. S. Feigelson
Publisher:
ISBN:
Category :
Languages : en
Pages : 79
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Book Description
This report summarizes two years' work as part of a multiyear program on improved techniques for the growth of high quality cadmium telluride crystals and represents one of the most comprehensive studies of melt growth and defect characterization in CdTe reported to date. Extensive melt growth studied were carried out using te vertical Bridgman method. Growth parameters were systematically varied in order to determine the influence of seed orientation, thermal environment, and growth rate on crystal quality. Growth interface shapes were revealed using autoradiographic dopant tracing methods. Melt thermal profiling was also carried out to further evaluate growth interface shapes. Controlled convex growth interface shapes were generated by using the heat exchanger method. By this means some improvement in grain structure of the typically polycrystalline boules was accomplished. Low frequency melt vibrations during growth were also observed to improve grain structure and reduce dislocation density. Extensive defect characterization was alos carried out using chemical etching methods, and later, synchrotron x-ray topography. Comparative studies of a broad selection of commercial CdTe substrates was carried out, and extensive defect structure was observed in all cases. Reduced dislocation densities and defect structures were accomplished using both low amplitude melt vibrations and doping with In 1IIC13. In the second case, solution hardening was assumed to be the mechanism responsible. For the case of melt vibration, the mechanism is not yet understood.
Author: R. S. Feigelson
Publisher:
ISBN:
Category :
Languages : en
Pages : 79
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Book Description
This report summarizes two years' work as part of a multiyear program on improved techniques for the growth of high quality cadmium telluride crystals and represents one of the most comprehensive studies of melt growth and defect characterization in CdTe reported to date. Extensive melt growth studied were carried out using te vertical Bridgman method. Growth parameters were systematically varied in order to determine the influence of seed orientation, thermal environment, and growth rate on crystal quality. Growth interface shapes were revealed using autoradiographic dopant tracing methods. Melt thermal profiling was also carried out to further evaluate growth interface shapes. Controlled convex growth interface shapes were generated by using the heat exchanger method. By this means some improvement in grain structure of the typically polycrystalline boules was accomplished. Low frequency melt vibrations during growth were also observed to improve grain structure and reduce dislocation density. Extensive defect characterization was alos carried out using chemical etching methods, and later, synchrotron x-ray topography. Comparative studies of a broad selection of commercial CdTe substrates was carried out, and extensive defect structure was observed in all cases. Reduced dislocation densities and defect structures were accomplished using both low amplitude melt vibrations and doping with In 1IIC13. In the second case, solution hardening was assumed to be the mechanism responsible. For the case of melt vibration, the mechanism is not yet understood.
Author: Kenneth R. Zanio
Publisher:
ISBN:
Category : Cadmium telluride
Languages : en
Pages : 136
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Book Description
Author:
Publisher:
ISBN:
Category : Military research
Languages : en
Pages : 644
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Book Description
Author: August F. Witt
Publisher:
ISBN:
Category :
Languages : en
Pages : 42
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Book Description
The thrust of this research project was directed at the development of new approaches leading to growth of CdTe single crystals with improved crystalline and chemical perfection. In pursuit of this objective a theoretical analysis was made of the stability of the growth interface as a function of crystallographic orientation. Using the concept of dangling bond densities, it was found that experimentally observed solitary and lamellar twinning phenomena during growth can be directly related to anisotropy in the energetics of unavoidably curved crystal melt interfaces. The theoretical results obtained led to the development of a vertical Bridgman growth configuration in which heat transfer control is accomplished through an axially aligned heat exchange system comprising a heat pipe, a gradient control zone, and a heat levelling device. As an alternate approach to melt growth of CdTe, the suitability of the high pressure liquid encapsulation Czochralski technique (HP-LEC) was investigated. In the course of this study, analytical techniques, including IR transmission microscopy with image processing and absorption spectroscopy of the optical band edge, were developed and applied to investigations of the bulk defect structure. The results obtained during this research program constitute the basis for extensive DARPA, Air Force, and NASA sponsored research on growth of III-V and II-VI compound semiconductor systems.
Author:
Publisher:
ISBN:
Category : Aeronautics
Languages : en
Pages : 702
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Book Description
Author: Fred Pollak
Publisher:
ISBN:
Category :
Languages : en
Pages : 9
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Book Description
We have grown epitaxial layers of mercury telluride by the new method of current controlled liquid phase epitaxy (CCLPE). We have designed and constructed the apparatus necessary to grow highly homogeneous crystalline layers of this material by this new technique. The design has been tested repeatedly and a number of crystalline layers have been successfully grown. These layers have been studied micrographically and with the use of X-ray diffraction and electrolyte electroreflectance techniques. (Author).
Author: Franz Rosenberger
Publisher:
ISBN:
Category : Crystal growth
Languages : en
Pages : 58
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Book Description
Author: Laxman Raju Thoutam
Publisher: Springer Nature
ISBN: 9811913129
Category : Science
Languages : en
Pages : 472
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Book Description
This book serves as a quick guide on the latest material systems including their synthesis, fabrication and characterization techniques. It discusses recent developments in different material systems and discusses their novel applications in various branches of science and engineering. The book briefs latest computational tools and techniques that are used to discover new material systems. The book also briefs applications of new emerging materials in various fields including, healthcare, sensors, opto-electronics, high power devices and nano-electronics. This book helps to create a synergy between computational and experimental research methods to better understand a particular material system.
Author: Leonardo Abbene
Publisher: Springer Nature
ISBN: 3031209559
Category : Technology & Engineering
Languages : en
Pages : 246
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Book Description
This book will provide readers with a good overview of some of most recent advances in the field of High-Z materials. There will be a good mixture of general chapters in both technology and applications in opto-electronics, X-ray detection and emerging optoelectronics applications. The book will have an in-depth review of the research topics from world-leading specialists in the field.
Author:
Publisher: Elsevier
ISBN: 0080965148
Category : Science
Languages : en
Pages : 292
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Book Description
Almost thirty years after the remarkable monograph of K. Zanio and the numerous conferences and articles dedicated since that time to CdTe and CdZnTe, after all the significant progresses in that field and the increasing interest in these materials for several extremely attractive industrial applications, such as nuclear detectors and solar cells, the edition of a new enriched and updated monograph dedicated to these two very topical II-VI semiconductor compounds, covering all their most prominent, modern and fundamental aspects, seemed very relevant and useful. - Detailed coverage of the main topics associated with the very topical II-VI semiconductor compound CdTe and its alloy CZT - Review of the CdTe recent developments - Fundamental background of many topics clearly introduced and exposed
