III-V Compound Semiconductor Dopant Profiling Using Scanning Spreading Resistance Microscopy PDF Download
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Author: Ryan Paul Lu
Publisher:
ISBN:
Category :
Languages : en
Pages : 358
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Book Description
Author: Ryan Paul Lu
Publisher:
ISBN:
Category :
Languages : en
Pages : 358
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Book Description
Author: Regis Joseph Kline
Publisher:
ISBN:
Category : Semiconductors
Languages : en
Pages : 208
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Book Description
Author: Gary E. McGuire
Publisher: Momentum Press
ISBN: 1606500430
Category : Technology & Engineering
Languages : en
Pages : 217
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Book Description
Compound semiconductors such as Gallium Arsenide, Gallium Aluminum Arsenide, and Indium Phosphide are often difficult to characterize and present a variety of challenges from substrate preparation, to epitaxial growth to dielectric film deposition to dopant introduction. This book reviews the common classes of compound semiconductors, their physical, optical and electrical properties and the various types of methods used for characterizing them when analyzing for defects and application problems. The book features: -- Characterization of III-V Thin Films for Electronic and Optical applications -- Characterization of Dielectric Insulating Film layers -- A Special case study on Deep Level Transient Spectroscopy on GaAs -- Concise summaries of major characterization technologies for compound semiconductor materials, including Auger Electron Spectroscopy, Ballistic Electron Emission Microscopy, Energy-Dispersive X-Ray Spectroscopy, Neutron Activation Analysis and Raman Spectroscopy
Author: Jing Yang
Publisher:
ISBN:
Category : Scanning probe microscopy
Languages : en
Pages : 138
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Book Description
Author: Louison Cheng Pheng Tan
Publisher:
ISBN:
Category :
Languages : en
Pages : 360
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Book Description
Author: Jan Kristen Prüßing
Publisher:
ISBN:
Category :
Languages : en
Pages : 0
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Book Description
Author: E. F. Schubert
Publisher:
ISBN:
Category :
Languages : en
Pages : 8
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Book Description
Doping distributions with spatially abrupt boundaries and high concentrations become increasingly important for compound semiconductor devices. A good understanding of the limitations of profiling techniques is required for such doping distributions. Two profiling techniques, capacitance-voltage (C-V) profiling and secondary ion mass spectrometry (SIMS), are used to study ultra-thin doping profiles and the limitations of the characterization techniques are analyzed.
Author:
Publisher:
ISBN:
Category : Dissertations, Academic
Languages : en
Pages : 608
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Book Description
Author: Dieter K. Schroder
Publisher: John Wiley & Sons
ISBN: 0471739065
Category : Technology & Engineering
Languages : en
Pages : 800
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Book Description
This Third Edition updates a landmark text with the latest findings The Third Edition of the internationally lauded Semiconductor Material and Device Characterization brings the text fully up-to-date with the latest developments in the field and includes new pedagogical tools to assist readers. Not only does the Third Edition set forth all the latest measurement techniques, but it also examines new interpretations and new applications of existing techniques. Semiconductor Material and Device Characterization remains the sole text dedicated to characterization techniques for measuring semiconductor materials and devices. Coverage includes the full range of electrical and optical characterization methods, including the more specialized chemical and physical techniques. Readers familiar with the previous two editions will discover a thoroughly revised and updated Third Edition, including: Updated and revised figures and examples reflecting the most current data and information 260 new references offering access to the latest research and discussions in specialized topics New problems and review questions at the end of each chapter to test readers' understanding of the material In addition, readers will find fully updated and revised sections in each chapter. Plus, two new chapters have been added: Charge-Based and Probe Characterization introduces charge-based measurement and Kelvin probes. This chapter also examines probe-based measurements, including scanning capacitance, scanning Kelvin force, scanning spreading resistance, and ballistic electron emission microscopy. Reliability and Failure Analysis examines failure times and distribution functions, and discusses electromigration, hot carriers, gate oxide integrity, negative bias temperature instability, stress-induced leakage current, and electrostatic discharge. Written by an internationally recognized authority in the field, Semiconductor Material and Device Characterization remains essential reading for graduate students as well as for professionals working in the field of semiconductor devices and materials. An Instructor's Manual presenting detailed solutions to all the problems in the book is available from the Wiley editorial department.
Author: Institute of Physics Conference
Publisher: CRC Press
ISBN: 1000157105
Category : Science
Languages : en
Pages : 1352
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Book Description
Compound Semiconductors 1995 focuses on emerging applications for GaAs and other compound semiconductors, such as InP, GaN, GaSb, ZnSe, and SiC, in the electronics and optoelectronics industries. The book presents the research and development work in all aspects of compound semiconductors. It reflects the maturity of GaAs as a semiconductor material and the rapidly increasing pool of research information on many other compound semiconductors. Covering the full breadth of the subject, from growth through processing to devices and integrated circuits, this volume provides researchers in materials science, device physics, condensed matter physics, and electrical and electronic engineering with a comprehensive overview of developments in this well-established research area.
