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Author: J. De Boeck
Publisher:
ISBN:
Category :
Languages : en
Pages : 11
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Book Description
Molecular beam epitaxy (MBE) has been used very successfully over the past 10 years to produce the most interesting spintronic heterostructures. This paper illustrates the strength of MBE in realizing materials combinations that can lead to efficient spin-injection. The paper is not an exhaustive description of all possible materials combinations, but a review of some important aspects of spin-source fabrication. In line with today's emphasis on demonstrating the spin-injection process in III-V (electroluminescent) semiconductor devices, the paper will focus on Gallium Arsenide-based (GaAs-based) epitaxial heterostructures. The first part of the paper describes the epitaxy of metallic ferromagnetic elements and alloys on GaAs. The authors review the results of initial experiments on Iron (Fe) and Cobalt (Co) epitaxy, since these materials are in the picture for Schottky barrier spin-injection devices today. Further, a brief description of Manganese-based (Mn) alloys is presented, justified by the wealth of possible Mn-III or Mn-V alloys that can be epitaxially grown on GaAs with various properties. This section is followed by a discussion of Gallium Manganese Arsenide (GaMnAs) as a ferromagnetic semiconductor and a summary of the results obtained recently on the epitaxial growth of Nickel Manganese Antimony (NiMnSb) on GaAs, a half-metallic magnetic alloy that has the potential to serve as a spin-source with 100% spin-polarization. The authors also briefly discuss some results on the realization of heterostructures, including two magnetic layers spaced by a semiconductor or vice versa. A very appealing class of materials for spintronics is that of magnetic semiconductors, illustrated in this paper by (Aluminum, Gallium) Manganese Arsenides (Al, Ga)MnAs. A concluding section deals with the contact strategies (ohmic, Schottky barrier, or tunnel barrier) for spin-injection reports in which the materials combinations play an important role. (9 figures, 94 refs.).
Author: J. De Boeck
Publisher:
ISBN:
Category :
Languages : en
Pages : 11
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Book Description
Molecular beam epitaxy (MBE) has been used very successfully over the past 10 years to produce the most interesting spintronic heterostructures. This paper illustrates the strength of MBE in realizing materials combinations that can lead to efficient spin-injection. The paper is not an exhaustive description of all possible materials combinations, but a review of some important aspects of spin-source fabrication. In line with today's emphasis on demonstrating the spin-injection process in III-V (electroluminescent) semiconductor devices, the paper will focus on Gallium Arsenide-based (GaAs-based) epitaxial heterostructures. The first part of the paper describes the epitaxy of metallic ferromagnetic elements and alloys on GaAs. The authors review the results of initial experiments on Iron (Fe) and Cobalt (Co) epitaxy, since these materials are in the picture for Schottky barrier spin-injection devices today. Further, a brief description of Manganese-based (Mn) alloys is presented, justified by the wealth of possible Mn-III or Mn-V alloys that can be epitaxially grown on GaAs with various properties. This section is followed by a discussion of Gallium Manganese Arsenide (GaMnAs) as a ferromagnetic semiconductor and a summary of the results obtained recently on the epitaxial growth of Nickel Manganese Antimony (NiMnSb) on GaAs, a half-metallic magnetic alloy that has the potential to serve as a spin-source with 100% spin-polarization. The authors also briefly discuss some results on the realization of heterostructures, including two magnetic layers spaced by a semiconductor or vice versa. A very appealing class of materials for spintronics is that of magnetic semiconductors, illustrated in this paper by (Aluminum, Gallium) Manganese Arsenides (Al, Ga)MnAs. A concluding section deals with the contact strategies (ohmic, Schottky barrier, or tunnel barrier) for spin-injection reports in which the materials combinations play an important role. (9 figures, 94 refs.).
Author: Tomasz Dietl
Publisher: Academic Press
ISBN: 0080914217
Category : Technology & Engineering
Languages : en
Pages : 549
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Book Description
This new volume focuses on a new, exciting field of research: Spintronics, the area also known as spin-based electronics. The ultimate aim of researchers in this area is to develop new devices that exploit the spin of an electron instead of, or in addition to, its electronic charge. In recent years many groups worldwide have devoted huge efforts to research of spintronic materials, from their technology through characterization to modeling. The resultant explosion of papers in this field and the solid scientific results achieved justify the publication of this volume. Its goal is to summarize the current level of understanding and to highlight some key results and milestones that have been achieved to date. Semiconductor spintronics is expected to lead to a new generation of transistors, lasers and integrated magnetic sensors that can be used to create ultra-low power, high-speed memory, logic and photonic devices. In addition, development of novel devices such as spin-polarized light emitters, spin field effect transistors, integrated sensors and high-temperature electronics is anticipated. - Spintronics has emerged as one of the fastest growing areas of research - This text presents an in-depth examination of the most recent technological spintronic developments - Includes contributions from leading scholars and industry experts
Author: Chander Prakash
Publisher: Springer Nature
ISBN: 9811941475
Category : Technology & Engineering
Languages : en
Pages : 538
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Book Description
This book presents the select proceedings of the International Conference on Functional Material, Manufacturing and Performances (ICFMMP 2021), and aims to provide a comprehensive and broad-spectrum picture of the state-of-the-art research, development, and commercial prospective of various discoveries conducted in the real-world materials science applications. Various topics covered include materials science and engineering, materials property and characterization, materials applications, performance, and life cycle, ferrous and non-ferrous materials, composites, nanomaterials, ceramics and glasses, feature engineering, polymers, etc. The book will be a valuable reference for beginners, researchers, and professionals interested in materials engineering and allied fields.
Author: Parmod Kumar
Publisher: Elsevier
ISBN: 0323909086
Category : Technology & Engineering
Languages : en
Pages : 738
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Book Description
Defect-Induced Magnetism in Oxide Semiconductors provides an overview of the latest advances in defect engineering to create new magnetic materials and enable new technological applications. First, the book introduces the mechanisms, behavior, and theory of magnetism in oxide semiconductors and reviews the methods of inducing magnetism in these materials. Then, strategies such as pulsed laser deposition and RF sputtering to grow oxide nanostructured materials with induced magnetism are discussed. This is followed by a review of the most relevant postdeposition methods to induce magnetism in oxide semiconductors including annealing, ion irradiation, and ion implantation. Examples of defect-induced magnetism in oxide semiconductors are provided along with selected applications. This book is a suitable reference for academic researchers and practitioners and for people engaged in research and development in the disciplines of materials science and engineering. - Reviews the magnetic, electrical, dielectric and optical properties of oxide semiconductors with defect-induced magnetism - Discusses growth and post-deposition strategies to grow oxide nanostructured materials such as oxide thin films with defect-induced magnetism - Provides examples of materials with defect-induced magnetism such as zinc oxide, cerium dioxide, hafnium dioxide, and more
Author: Sekhar Chandra Ray
Publisher: Elsevier
ISBN: 0128176814
Category : Technology & Engineering
Languages : en
Pages : 241
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Book Description
Magnetism and Spintronics in Carbon and Carbon Nanostructured Materials offers coverage of electronic structure, magnetic properties and their spin injection, and the transport properties of DLC, graphene, graphene oxide, carbon nanotubes, fullerenes, and their different composite materials. This book is a valuable resource for those doing research or working with carbon and carbon-related nanostructured materials for electronic and magnetic devices. Carbon-based nanomaterials are promising for spintronic applications because their weak spin-orbit (SO) coupling and hyperfine interaction in carbon atoms entail exceptionally long spin diffusion lengths (~100μm) in carbon nanotubes and graphene. The exceptional electronic and transport features of carbon nanomaterials could be exploited to build multifunctional spintronic devices. However, a large spin diffusion length comes at the price of small SO coupling, which limits the possibility of manipulating electrons via an external applied field. - Assesses the relative utility of a variety of carbon-based nanomaterials for spintronics applications - Analyzes the specific properties that make carbon and carbon nanostructured materials optimal for spintronics and magnetic applications - Discusses the major challenges to using carbon nanostructured materials as magnetic agents on a mass scale
Author: Hajime Asahi
Publisher: John Wiley & Sons
ISBN: 1119355028
Category : Science
Languages : en
Pages : 660
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Book Description
Covers both the fundamentals and the state-of-the-art technology used for MBE Written by expert researchers working on the frontlines of the field, this book covers fundamentals of Molecular Beam Epitaxy (MBE) technology and science, as well as state-of-the-art MBE technology for electronic and optoelectronic device applications. MBE applications to magnetic semiconductor materials are also included for future magnetic and spintronic device applications. Molecular Beam Epitaxy: Materials and Applications for Electronics and Optoelectronics is presented in five parts: Fundamentals of MBE; MBE technology for electronic devices application; MBE for optoelectronic devices; Magnetic semiconductors and spintronics devices; and Challenge of MBE to new materials and new researches. The book offers chapters covering the history of MBE; principles of MBE and fundamental mechanism of MBE growth; migration enhanced epitaxy and its application; quantum dot formation and selective area growth by MBE; MBE of III-nitride semiconductors for electronic devices; MBE for Tunnel-FETs; applications of III-V semiconductor quantum dots in optoelectronic devices; MBE of III-V and III-nitride heterostructures for optoelectronic devices with emission wavelengths from THz to ultraviolet; MBE of III-V semiconductors for mid-infrared photodetectors and solar cells; dilute magnetic semiconductor materials and ferromagnet/semiconductor heterostructures and their application to spintronic devices; applications of bismuth-containing III–V semiconductors in devices; MBE growth and device applications of Ga2O3; Heterovalent semiconductor structures and their device applications; and more. Includes chapters on the fundamentals of MBE Covers new challenging researches in MBE and new technologies Edited by two pioneers in the field of MBE with contributions from well-known MBE authors including three Al Cho MBE Award winners Part of the Materials for Electronic and Optoelectronic Applications series Molecular Beam Epitaxy: Materials and Applications for Electronics and Optoelectronics will appeal to graduate students, researchers in academia and industry, and others interested in the area of epitaxial growth.
Author: Radhakanta Rana
Publisher: Springer Nature
ISBN: 3030538257
Category : Technology & Engineering
Languages : en
Pages : 673
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Book Description
The current state of understanding of emerging iron alloys and high-alloy ferrous systems, in comparison with some conventional steels, is compiled in this single volume to further their development. While most of the conventional steels are produced routinely today, many advanced high strength steels and iron-based alloys are still in the laboratory stage. The iron-based emerging alloys can yield high levels of mechanical and physical properties due to their new alloy concepts and novel microstructures leading to multiple benefits of their use in terms of sustainability and environmental impact. This book contains introductory chapters that present the requisite background knowledge on thermodynamics, phase diagrams, and processing routes used for the ferrous alloys to enable the readers a smooth understanding of the main chapters. Then, an overview of the conventional microalloyed steels and advanced high strength steels is given to present the benchmark of the existing steels and ferrous alloys manifesting their current state-of-the-art in terms of physical metallurgy and engineering applications. Subsequent chapters detail novel, emerging ferrous alloys and high-alloy ferrous systems. Summarizes the state-of-the-art of emerging iron-based alloys and the new processing and physical metallurgy-related developments of high-alloy iron systems; Explores new iron-based systems driven by the need for new properties, enhanced performance, sustainable processes and educed environmental impact; Compiles cutting-edge research on the progress of materials science of iron-based systems, from physical metallurgy to engineering applications, and possible avenues for future research.
Author: Ferry Michael Postma
Publisher:
ISBN: 9789036522229
Category :
Languages : en
Pages : 188
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Book Description
Author: Puja Dey
Publisher: Springer Nature
ISBN: 9811600694
Category : Science
Languages : en
Pages : 287
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Book Description
This book highlights the overview of Spintronics, including What is Spintronics ?; Why Do We Need Spintronics ?; Comparative merit-demerit of Spintronics and Electronics ; Research Efforts put on Spintronics ; Quantum Mechanics of Spin; Dynamics of magnetic moments : Landau-Lifshitz-Gilbert Equation; Spin-Dependent Band Gap in Ferromagnetic Materials; Functionality of ‘Spin’ in Spintronics; Different Branches of Spintronics etc. Some important notions on basic elements of Spintronics are discussed here, such as – Spin Polarization, Spin Filter Effect, Spin Generation and Injection, Spin Accumulation, Different kinds of Spin Relaxation Phenomena, Spin Valve, Spin Extraction, Spin Hall Effect, Spin Seebeck Effect, Spin Current Measurement Mechanism, Magnetoresistance and its different kinds etc. Concept of Giant Magnetoresistance (GMR), different types of GMR, qualitative and quantitative explanation of GMR employing Resistor Network Theory are presented here. Tunnelling Magnetoresistance (TMR), Magnetic Junctions, Effect of various parameters on TMR, Measurement of spin relaxation length and time in the spacer layer are covered here. This book highlights the concept of Spin Transfer Torque (STT), STT in Ferromagnetic Layer Structures, STT driven Magnetization Dynamics, STT in Magnetic Multilayer Nanopillar etc. This book also sheds light on Magnetic Domain Wall (MDW) Motion, Ratchet Effect in MDW motion, MDW motion velocity measurements, Current-driven MDW motion, etc. The book deals with the emerging field of spintronics, i.e., Opto-spintronics. Special emphasis is given on ultrafast optical controlling of magnetic states of antiferromagnet, Spin-photon interaction, Faraday Effect, Inverse Faraday Effect and outline of different all-optical spintronic switching. One more promising branch i.e., Terahertz Spintronics is also covered. Principle of operation of spintronic terahertz emitter, choice of materials, terahertz writing of an antiferromagnetic magnetic memory device is discussed. Brief introduction of Semiconductor spintronics is presented that includes dilute magnetic semiconductor, feromagnetic semiconductor, spin polarized semiconductor devices, three terminal spintronic devices, Spin transistor, Spin-LED, and Spin-Laser. This book also emphasizes on several modern spintronics devices that includes GMR Read Head of Modern Hard Disk Drive, MRAM, Position Sensor, Biosensor, Magnetic Field sensor, Three Terminal Magnetic Memory Devices, Spin FET, Race Track Memory and Quantum Computing.
Author: Hideaki Takayanagi
Publisher: World Scientific
ISBN: 9814471003
Category : Science
Languages : en
Pages : 433
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Book Description
This volume is a collection of papers from the fourth meeting of the International Symposium on Mesoscopic Superconductivity and Spintronics held at NTT Atsugi, Japan. Research in these fields has advanced a great deal since the previous meeting, largely because these fields have drawn much attention from the viewpoint of new quantum phenomena and quantum information technology. Mesoscopic superconductivity has been developed in new fields, such as a ferromagnet/superconductor junction, the proximity effect in unconventional superconductors, macroscopic quantum tunneling in high-Tc superconductors, quantum modulation of superconducting junctions and superconducting quantum bits. The book also covers transport and spins in nano-scale semiconductor structures such as quantum dots and wires, quantum interference and coherence and order in exotic materials, and some papers on quantum algorithm. This book adequately provides an overview of recent progress in mesoscopic superconductivity.
