Author: Parl Harold Bardell
Publisher:
ISBN:
Category : Electron work function
Languages : en
Pages : 56
Book Description
Hot-electron Transport in Thin Copper Films
Author: Parl Harold Bardell
Publisher:
ISBN:
Category : Electron work function
Languages : en
Pages : 56
Book Description
Publisher:
ISBN:
Category : Electron work function
Languages : en
Pages : 56
Book Description
Hot-electron Transport in Thin Copper Films
Author: Stanford University. Stanford Electronics Laboratories
Publisher:
ISBN:
Category : Metallic films
Languages : en
Pages : 78
Book Description
Publisher:
ISBN:
Category : Metallic films
Languages : en
Pages : 78
Book Description
Hot Electron Transport in Vacuum Deposited Thin Film Emission Diodes
Author: Rodney Joseph Soukup
Publisher:
ISBN:
Category : Electrons
Languages : en
Pages : 424
Book Description
Publisher:
ISBN:
Category : Electrons
Languages : en
Pages : 424
Book Description
Technical Abstract Bulletin
Author:
Publisher:
ISBN:
Category : Science
Languages : en
Pages : 908
Book Description
Publisher:
ISBN:
Category : Science
Languages : en
Pages : 908
Book Description
Constitucion politica de la Monarquia espaƱola, promulgada en Cadiz el dio 19 de marzo de 1812, y acceptada por el rey el [...] 8 de marzo de 1821...
Author:
Publisher:
ISBN:
Category :
Languages : en
Pages :
Book Description
Publisher:
ISBN:
Category :
Languages : en
Pages :
Book Description
Study of Electron Transport Through Polymeric and Crystalline Thin Films Using Twin Electrodes
Author: Benjamin Jay Feldman
Publisher:
ISBN:
Category : Electron transport
Languages : en
Pages : 636
Book Description
Publisher:
ISBN:
Category : Electron transport
Languages : en
Pages : 636
Book Description
A DDC Bibliography on Computer-aided Logical Processes
Author: Defense Documentation Center (U.S.)
Publisher:
ISBN:
Category : Bionics
Languages : en
Pages : 166
Book Description
Publisher:
ISBN:
Category : Bionics
Languages : en
Pages : 166
Book Description
Multiple Adaptive Logic Functions
Author: Stanford University. Stanford Electronics Laboratories
Publisher:
ISBN:
Category :
Languages : en
Pages : 66
Book Description
Publisher:
ISBN:
Category :
Languages : en
Pages : 66
Book Description
Electron Transport in Highly Textured Metal Films Grown by Partially Ionized Beam Deposition
Author:
Publisher:
ISBN:
Category :
Languages : en
Pages : 17
Book Description
In principle. the resistivity of bulk face centered cubic (fcc) materials should not depend on the orientation due to the fact that the conductivity tensor is single valued. However, we show that this conclusion is not valid for thin films. Deposition of highly oriented aluminum, silver, and copper films on amorphous substrates using the partially ionized beam (PIB) technique exhibits a resistivity that is strongly correlated with the texture, i.e., the tighter the texture, the lower the film resistivity. We model the film as an array of grains whose grain boundaries can be considered as delta function potentials for electron scattering, and the strength of the potentials can be calculated from the measured resistivity of the films. On the other hand, the fiber texture distribution of the films is obtained from X-ray pole figure measurements, and Monte Carlo simulations are then performed using these data to determine the average dislocation density at the grain boundaries due to the grain-to-grain crystallographic mismatch. We show that the transmittance coefficient for electron scattering, and therefore, the film resistivity, is a monotonically increasing function of the average dislocation density. We, therefore, conclude that the structure of grain boundaries in a thin film provides the necessary mechanism by which the resistivity of an fcc cubic metal can depend on the texture.
Publisher:
ISBN:
Category :
Languages : en
Pages : 17
Book Description
In principle. the resistivity of bulk face centered cubic (fcc) materials should not depend on the orientation due to the fact that the conductivity tensor is single valued. However, we show that this conclusion is not valid for thin films. Deposition of highly oriented aluminum, silver, and copper films on amorphous substrates using the partially ionized beam (PIB) technique exhibits a resistivity that is strongly correlated with the texture, i.e., the tighter the texture, the lower the film resistivity. We model the film as an array of grains whose grain boundaries can be considered as delta function potentials for electron scattering, and the strength of the potentials can be calculated from the measured resistivity of the films. On the other hand, the fiber texture distribution of the films is obtained from X-ray pole figure measurements, and Monte Carlo simulations are then performed using these data to determine the average dislocation density at the grain boundaries due to the grain-to-grain crystallographic mismatch. We show that the transmittance coefficient for electron scattering, and therefore, the film resistivity, is a monotonically increasing function of the average dislocation density. We, therefore, conclude that the structure of grain boundaries in a thin film provides the necessary mechanism by which the resistivity of an fcc cubic metal can depend on the texture.
Electron Transport Properties of Ni and Cr Thin Films
Author: Mark E. Amoruso
Publisher:
ISBN:
Category : Chromium
Languages : en
Pages : 126
Book Description
Publisher:
ISBN:
Category : Chromium
Languages : en
Pages : 126
Book Description