Author: Shankar P. Sinha
Publisher:
ISBN:
Category :
Languages : en
Pages : 254
Book Description
Hot-carrier Reliability of Silicon-on-insulator (SOI) MOSFETs and Applications to Non-volatile Memories
Author: Shankar P. Sinha
Publisher:
ISBN:
Category :
Languages : en
Pages : 254
Book Description
Publisher:
ISBN:
Category :
Languages : en
Pages : 254
Book Description
Design, Process, and Reliability Considerations in Silicon-on-insulator (SOI) MOSFETs
Author: Melanie Jane Sherony
Publisher:
ISBN:
Category :
Languages : en
Pages : 135
Book Description
Publisher:
ISBN:
Category :
Languages : en
Pages : 135
Book Description
Material and Reliability Issues in Fully Depleted Silicon on Insulator (SOI) MOSFETs
Author: Shankar Prasad Sinha
Publisher:
ISBN:
Category :
Languages : en
Pages : 156
Book Description
Publisher:
ISBN:
Category :
Languages : en
Pages : 156
Book Description
Japanese Journal of Applied Physics
Author:
Publisher:
ISBN:
Category : Physics
Languages : en
Pages : 1538
Book Description
Publisher:
ISBN:
Category : Physics
Languages : en
Pages : 1538
Book Description
American Doctoral Dissertations
Author:
Publisher:
ISBN:
Category : Dissertation abstracts
Languages : en
Pages : 872
Book Description
Publisher:
ISBN:
Category : Dissertation abstracts
Languages : en
Pages : 872
Book Description
Hot-carrier Reliability, Effective Carrier Mobility, and 1/f Noise Properties of Thin-film Silicon-on-insulator (TFSOI) MOSFETs
Author: Janet Siao-Yian Wang
Publisher:
ISBN:
Category :
Languages : en
Pages : 312
Book Description
Publisher:
ISBN:
Category :
Languages : en
Pages : 312
Book Description
Hot Carrier Design Considerations for MOS Devices and Circuits
Author: Cheng Wang
Publisher: Springer
ISBN:
Category : Juvenile Nonfiction
Languages : en
Pages : 360
Book Description
As device dimensions decrease, hot-carrier effects, which are due mainly to the presence of a high electric field inside the device, are becoming a major design concern. On the one hand, the detrimental effects-such as transconductance degradation and threshold shift-need to be minimized or, if possible, avoided altogether. On the other hand, performance such as the programming efficiency of nonvolatile memories or the carrier velocity inside the devices-need to be maintained or improved through the use of submicron technologies, even in the presence of a reduced power supply. As a result, one of the major challenges facing MOS design engineers today is to harness the hot-carrier effects so that, without sacrificing product performance, degradation can be kept to a minimum and a reli able design obtained. To accomplish this, the physical mechanisms re sponsible for the degradations should first be experimentally identified and characterized. With adequate models thus obtained, steps can be taken to optimize the design, so that an adequate level of quality assur ance in device or circuit performance can be achieved. This book ad dresses these hot-carrier design issues for MOS devices and circuits, and is used primarily as a professional guide for process development engi neers, device engineers, and circuit designers who are interested in the latest developments in hot-carrier degradation modeling and hot-carrier reliability design techniques. It may also be considered as a reference book for graduate students who have some research interests in this excit ing, yet sometime controversial, field.
Publisher: Springer
ISBN:
Category : Juvenile Nonfiction
Languages : en
Pages : 360
Book Description
As device dimensions decrease, hot-carrier effects, which are due mainly to the presence of a high electric field inside the device, are becoming a major design concern. On the one hand, the detrimental effects-such as transconductance degradation and threshold shift-need to be minimized or, if possible, avoided altogether. On the other hand, performance such as the programming efficiency of nonvolatile memories or the carrier velocity inside the devices-need to be maintained or improved through the use of submicron technologies, even in the presence of a reduced power supply. As a result, one of the major challenges facing MOS design engineers today is to harness the hot-carrier effects so that, without sacrificing product performance, degradation can be kept to a minimum and a reli able design obtained. To accomplish this, the physical mechanisms re sponsible for the degradations should first be experimentally identified and characterized. With adequate models thus obtained, steps can be taken to optimize the design, so that an adequate level of quality assur ance in device or circuit performance can be achieved. This book ad dresses these hot-carrier design issues for MOS devices and circuits, and is used primarily as a professional guide for process development engi neers, device engineers, and circuit designers who are interested in the latest developments in hot-carrier degradation modeling and hot-carrier reliability design techniques. It may also be considered as a reference book for graduate students who have some research interests in this excit ing, yet sometime controversial, field.
Drain Leakage and Hot Carrier Reliability of SOI MOSFET's
Author: Xuejun Zhao
Publisher:
ISBN:
Category :
Languages : en
Pages : 256
Book Description
Publisher:
ISBN:
Category :
Languages : en
Pages : 256
Book Description
Electrical & Electronics Abstracts
Author:
Publisher:
ISBN:
Category : Electrical engineering
Languages : en
Pages : 1904
Book Description
Publisher:
ISBN:
Category : Electrical engineering
Languages : en
Pages : 1904
Book Description
Silicon Nanowire MOSFETs and Applications to Non-volatile Memory
Author: Xiaoxiao Zhu
Publisher:
ISBN:
Category : Computer storage devices
Languages : en
Pages : 342
Book Description
Publisher:
ISBN:
Category : Computer storage devices
Languages : en
Pages : 342
Book Description