Hot-carrier Reliability of Bipolar Transistors and Circuits PDF Download
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Author: Burnett James
Publisher:
ISBN:
Category :
Languages : en
Pages : 316
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Author: Burnett James
Publisher:
ISBN:
Category :
Languages : en
Pages : 316
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Book Description
Author: Eiji Takeda
Publisher: Academic Press
ISBN: 0126822409
Category : Juvenile Nonfiction
Languages : en
Pages : 329
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Book Description
The exploding number of uses for ultrafast, ultrasmall integrated circuits has increased the importance of hot-carrier effects in manufacturing as well as for other technological applications. They are rapidly movingout of the research lab and into the real world. This book is derived from Dr. Takedas book in Japanese, Hot-Carrier Effects, (published in 1987 by Nikkei Business Publishers). However, the new book is much more than a translation. Takedas original work was a starting point for developing this much more complete and fundamental text on this increasingly important topic. The new work encompasses not only all the latest research and discoveries made in the fast-paced area of hot carriers, but also includes the basics of MOS devices, and the practical considerations related to hot carriers. Chapter one itself is a comprehensive review of MOS device physics which allows a reader with little background in MOS devices to pick up a sufficient amount of information to be able to follow the rest of the book The book is written to allow the reader to learn about MOS Device Reliability in a relatively short amount of time, making the texts detailed treatment of hot-carrier effects especially useful and instructive to both researchers and others with varyingamounts of experience in the field The logical organization of the book begins by discussing known principles, then progresses to empirical information and, finally, to practical solutions Provides the most complete review of device degradation mechanisms as well as drain engineering methods Contains the most extensive reference list on the subject
Author: Chi-Jung Huang
Publisher:
ISBN:
Category : Bipolar transistors
Languages : en
Pages : 364
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Book Description
Author: Antonio R. Alvarez
Publisher: Springer Science & Business Media
ISBN: 1461532183
Category : Technology & Engineering
Languages : en
Pages : 412
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Book Description
BiCMOS Technology and Applications, Second Edition provides a synthesis of available knowledge about the combination of bipolar and MOS transistors in a common integrated circuit - BiCMOS. In this new edition all chapters have been updated and completely new chapters on emerging topics have been added. In addition, BiCMOS Technology and Applications, Second Edition provides the reader with a knowledge of either CMOS or Bipolar technology/design a reference with which they can make educated decisions regarding the viability of BiCMOS in their own application. BiCMOS Technology and Applications, Second Edition is vital reading for practicing integrated circuit engineers as well as technical managers trying to evaluate business issues related to BiCMOS. As a textbook, this book is also appropriate at the graduate level for a special topics course in BiCMOS. A general knowledge in device physics, processing and circuit design is assumed. Given the division of the book, it lends itself well to a two-part course; one on technology and one on design. This will provide advanced students with a good understanding of tradeoffs between bipolar and MOS devices and circuits.
Author: J M Marshall
Publisher: World Scientific
ISBN: 9814543705
Category :
Languages : en
Pages : 582
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Book Description
This volume constitutes the proceedings of the tenth meeting of the International school on Condensed Matter Physics. Since 1980, this community of condensed matter scientists has gathered in Varna, Bulgaria, every two years, to review and discuss the development of various investigations in the field, to present the latest results, and to outline the most important trends in condensed matter science.The book reflects the development of the field, and points to the growing interest in the application of theoretical achievements and to the mutual inspirations of science and technology.
Author: Richard X. Gu
Publisher: Springer Science & Business Media
ISBN: 1461522978
Category : Technology & Engineering
Languages : en
Pages : 322
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Book Description
High-Performance Digital VLSI Circuit Design is the first book devoted entirely to the design of digital high-performance VLSI circuits. CMOS, BiCMOS and bipolar ciruits are covered in depth, including state-of-the-art circuit structures. Recent advances in both the computer and telecommunications industries demand high-performance VLSI digital circuits. Digital processing of signals demands high-speed circuit techniques for the GHz range. The design of such circuits represents a great challenge; one that is amplified when the power supply is scaled down to 3.3 V. Moreover, the requirements of low-power/high-performance circuits adds an extra dimension to the design of such circuits. High-Performance Digital VLSI Circuit Design is a self-contained text, introducing the subject of high-performance VLSI circuit design and explaining the speed/power tradeoffs. The first few chapters of the book discuss the necessary background material in the area of device design and device modeling, respectively. High-performance CMOS circuits are then covered, especially the new all-N-logic dynamic circuits. Propagation delay times of high-speed bipolar CML and ECL are developed analytically to give a thorough understanding of various interacting process, device and circuit parameters. High-current phenomena of bipolar devices are also addressed as these devices typically operate at maximum currents for limited device area. Different, new, high-performance BiCMOS circuits are presented and compared to their conventional counterparts. These new circuits find direct applications in the areas of high-speed adders, frequency dividers, sense amplifiers, level-shifters, input/output clock buffers and PLLs. The book concludes with a few system application examples of digital high-performance VLSI circuits. Audience: A vital reference for practicing IC designers. Can be used as a text for graduate and senior undergraduate students in the area.
Author:
Publisher:
ISBN:
Category : Integrated circuits
Languages : en
Pages : 456
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Author:
Publisher:
ISBN:
Category : Electron devices
Languages : en
Pages : 810
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Book Description
Author: Niccolò Rinaldi
Publisher: CRC Press
ISBN: 1000794407
Category : Technology & Engineering
Languages : en
Pages : 377
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Book Description
The semiconductor industry is a fundamental building block of the new economy, there is no area of modern life untouched by the progress of nanoelectronics. The electronic chip is becomingan ever-increasing portion of system solutions, starting initially from less than 5% in the 1970 microcomputer era, to more than 60% of the final cost of a mobile telephone, 50% of the price of a personal computer (representing nearly 100% of the functionalities) and 30% of the price of a monitor in the early 2000’s.Interest in utilizing the (sub-)mm-wave frequency spectrum for commercial and research applications has also been steadily increasing. Such applications, which constitute a diverse but sizeable future market, span a large variety of areas such as health, material science, mass transit, industrial automation, communications, and space exploration.Silicon-Germanium Heterojunction Bipolar Transistors for mm-Wave Systems Technology, Modeling and Circuit Applications provides an overview of results of the DOTSEVEN EU research project, and as such focusses on key material developments for mm-Wave Device Technology. It starts with the motivation at the beginning of the project and a summary of its major achievements. The subsequent chapters provide a detailed description of the obtained research results in the various areas of process development, device simulation, compact device modeling, experimental characterization, reliability, (sub-)mm-wave circuit design and systems.
Author:
Publisher:
ISBN:
Category : Integrated circuits
Languages : en
Pages : 462
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Book Description
