Highly Stretchable Field-effect Transistors and Design Rules for Photovoltaics by Semiconducting Single-walled Carbon Nanotubes PDF Download
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Author: Meng-Yin Wu
Publisher:
ISBN:
Category :
Languages : en
Pages : 0
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Book Description
This dissertation demonstrates state-of-the-art deformable field-effect transistors (FETs) and photovoltaics based on high purity polymer-wrapped semiconducting single-walled carbon nanotubes (CNTs). We invent a whole-device buckling technique to fabricate stretchable CNT FETs on elastomeric substrates by incorporating a buckled network of CNT in the channel, a buckled layer of an ion gel as the gate dielectric, and buckled metal films as the electrodes. The FETs maintain an on/off ratio of > 104 and a field-effect mobility of > 5 cm2V-1s-1 up to 90% elongation in single direction, more than 100% biaxial elongation, and uniaxial elongation either parallel or perpendicular to the channel. The performance is stable for at least 10000 stretch-release cycles. Failure analysis shows that the extent of elongation is limited only by the magnitude of the pre-strain used during fabrication. A biaxial stretchable inverter with a stable switching behavior up to more than 100% biaxial elongation is demonstrated. Our work is expected to facilitate new technologies like stretchable displays, conformal devices, and electronic skins. CNTs are also attractive materials for harvesting light in photovoltaics. A crucial aspect of designing efficient photovoltaic devices using CNTs is minimizing the length scale for the absorption of light (LA) and maximizing the length scale across which excitons diffuse (LD) in fibers and films of these materials. In order to facilitate the optimization of these parameters, we model how LA and LD are affected by CNT bandgap polydispersity, inter-nanotube coupling, film disorder, orientation, and defects. Our models are guided by previous experimental measurements of optical absorption spectra and exciton inter-nanotube transfer rates made on isolated and bundled nanotubes in conjunction with kinetic Monte Carlo simulations. Our results provide criteria for materials selection and the design of efficient CNT-based light harvesting devices, in various architectures.
Author: Meng-Yin Wu
Publisher:
ISBN:
Category :
Languages : en
Pages : 0
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Book Description
This dissertation demonstrates state-of-the-art deformable field-effect transistors (FETs) and photovoltaics based on high purity polymer-wrapped semiconducting single-walled carbon nanotubes (CNTs). We invent a whole-device buckling technique to fabricate stretchable CNT FETs on elastomeric substrates by incorporating a buckled network of CNT in the channel, a buckled layer of an ion gel as the gate dielectric, and buckled metal films as the electrodes. The FETs maintain an on/off ratio of > 104 and a field-effect mobility of > 5 cm2V-1s-1 up to 90% elongation in single direction, more than 100% biaxial elongation, and uniaxial elongation either parallel or perpendicular to the channel. The performance is stable for at least 10000 stretch-release cycles. Failure analysis shows that the extent of elongation is limited only by the magnitude of the pre-strain used during fabrication. A biaxial stretchable inverter with a stable switching behavior up to more than 100% biaxial elongation is demonstrated. Our work is expected to facilitate new technologies like stretchable displays, conformal devices, and electronic skins. CNTs are also attractive materials for harvesting light in photovoltaics. A crucial aspect of designing efficient photovoltaic devices using CNTs is minimizing the length scale for the absorption of light (LA) and maximizing the length scale across which excitons diffuse (LD) in fibers and films of these materials. In order to facilitate the optimization of these parameters, we model how LA and LD are affected by CNT bandgap polydispersity, inter-nanotube coupling, film disorder, orientation, and defects. Our models are guided by previous experimental measurements of optical absorption spectra and exciton inter-nanotube transfer rates made on isolated and bundled nanotubes in conjunction with kinetic Monte Carlo simulations. Our results provide criteria for materials selection and the design of efficient CNT-based light harvesting devices, in various architectures.
Author: Fouad Sabry
Publisher: One Billion Knowledgeable
ISBN:
Category : Technology & Engineering
Languages : en
Pages : 500
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Book Description
What Is Carbon Nanotube Field Effect Transistor A carbon nanotube field-effect transistor, also known as a CNTFET, is a kind of field-effect transistor that makes use of a single carbon nanotube or an array of carbon nanotubes as the channel material in place of bulk silicon, as is done in the conventional MOSFET construction. Since they were first exhibited in 1998, there have been significant advancements in CNTFET technology. How You Will Benefit (I) Insights, and validations about the following topics: Chapter 1: Carbon nanotube field-effect transistor Chapter 2: Carbon nanotube Chapter 3: JFET Chapter 4: Schottky barrier Chapter 5: Electron mobility Chapter 6: Nanoelectromechanical systems Chapter 7: Threshold voltage Chapter 8: Organic field-effect transistor Chapter 9: Ballistic conduction Chapter 10: Hybrid solar cell Chapter 11: Potential applications of carbon nanotubes Chapter 12: Carbon nanotubes in photovoltaics Chapter 13: Optical properties of carbon nanotubes Chapter 14: Carbon nanotube nanomotor Chapter 15: NanoIntegris Chapter 16: Ballistic conduction in single-walled carbon nanotubes Chapter 17: Tunnel field-effect transistor Chapter 18: Field-effect transistor Chapter 19: Carbon nanotubes in interconnects Chapter 20: Synthesis of carbon nanotubes Chapter 21: Vertically aligned carbon nanotube arrays (II) Answering the public top questions about carbon nanotube field effect transistor. (III) Real world examples for the usage of carbon nanotube field effect transistor in many fields. (IV) 17 appendices to explain, briefly, 266 emerging technologies in each industry to have 360-degree full understanding of carbon nanotube field effect transistor' technologies. Who This Book Is For Professionals, undergraduate and graduate students, enthusiasts, hobbyists, and those who want to go beyond basic knowledge or information for any kind of carbon nanotube field effect transistor.
Author: Yugang Sun
Publisher: William Andrew
ISBN: 1437778240
Category : Technology & Engineering
Languages : en
Pages : 320
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Book Description
This book is an overview of the strategies to generate high-quality films of one-dimensional semiconductor nanostructures on flexible substrates (e.g., plastics) and the use of them as building blocks to fabricating flexible devices (including electronics, optoelectronics, sensors, power systems). In addition to engineering aspects, the physics and chemistry behind the fabrication and device operation will also be discussed as well. Internationally recognized scientists from academia, national laboratories, and industries, who are the leading researchers in the emerging areas, are contributing exceptional chapters according to their cutting-edge research results and expertise. This book will be an on-time addition to the literature in nanoscience and engineering. It will be suitable for graduate students and researchers as a useful reference to stimulate their research interest as well as facilitate their research in nanoscience and engineering. - Considers the physics and chemistry behind fabrication and device operation - Discusses applications to electronics, optoelectronics, sensors and power systems - Examines existing technologies and investigates emerging trends
Author: Dhanasekaran Vikraman
Publisher: BoD – Books on Demand
ISBN: 1789234166
Category : Technology & Engineering
Languages : en
Pages : 168
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Book Description
In recent years, research on microelectronics has been specifically focused on the proposition of efficient alternative methodologies and materials to fabricate feasible integrated circuits. This book provides a general background of thin film transistors and their simulations and constructions. The contents of the book are broadly classified into two topics: design and simulation of FETs and construction of FETs. All the authors anticipate that the provided chapters will act as a single source of reference for the design, simulation and construction of FETs. This edited book will help microelectronics researchers with their endeavors and would be a great addition to the realm of semiconductor physics.
Author: Gerald Joseph Brady
Publisher:
ISBN:
Category :
Languages : en
Pages : 172
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Book Description
Single walled carbon nanotubes (SWCNTs) have extraordinarily high current carrying capacity, tunable band gap, and can be solution processed at low temperatures making them an attractive candidate to complement or replace bulk semiconducting materials in next generation electronics. Critical materials roadblocks that have limited the performance of SWCNTs in electronics, however, are 1) the isolation of electronically homogeneous SWCNTs, 2) the hierarchical organization of SWCNT building blocks into organized assemblies, 3) reducing defects and impurities, and 4) making intimate electrical contacts to SWCNT films. Here I will present my progress in harnessing arrays of purely semiconducting SWCNTs as the active channel material for high-performance field-effect transistors (FETs) at short channel lengths (30 - 300 nm) where a majority of the SWCNTs directly span the source-drain channel. Conjugated polymers are used to selectively wrap and separate highly enriched semiconducting SWCNTs from electronically heterogeneous arc-discharge SWCNT powders. The semiconducting SWCNTs dispersed in organic-solvent are then aligned into arrays via a technique we pioneered that exploits solvent spreading and self-assembly of SWCNTs at the water-chloroform interface. Solvent rinsing and thermal annealing treatments are performed on the SWCNT array thin films to remove processing induced contaminants and residual polymer as confirmed by XPS, UV-Vis, and FTIR spectroscopy. The combination of high semiconducting purity, pristine quality achieved through surface treatment, and the ideal microstructure of the SWCNT array enables FETs with 7x higher current density than previous state-of-the-art SWCNT FETs. The saturated on-state current density exceeds Si and GaAs FETs of similar dimensions and off-state current density, which demonstrates the competitive advantage of these SWCNT arrays for logic, wireless communications, biological sensors and other semiconductor electronics technologies.
Author: Woong Kim
Publisher:
ISBN:
Category :
Languages : en
Pages : 190
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Book Description
Author: Raj, Balwinder
Publisher: IGI Global
ISBN: 1799813959
Category : Technology & Engineering
Languages : en
Pages : 255
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Book Description
With recent advancements in electronics, specifically nanoscale devices, new technologies are being implemented to improve the properties of automated systems. However, conventional materials are failing due to limited mobility, high leakage currents, and power dissipation. To mitigate these challenges, alternative resources are required to advance electronics further into the nanoscale domain. Carbon nanotube field-effect transistors are a potential solution yet lack the information and research to be properly utilized. Major Applications of Carbon Nanotube Field-Effect Transistors (CNTFET) is a collection of innovative research on the methods and applications of converting semiconductor devices from micron technology to nanotechnology. The book provides readers with an updated status on existing CNTs, CNTFETs, and their applications and examines practical applications to minimize short channel effects and power dissipation in nanoscale devices and circuits. While highlighting topics including interconnects, digital circuits, and single-wall CNTs, this book is ideally designed for electrical engineers, electronics engineers, students, researchers, academicians, industry professionals, and practitioners working in nanoscience, nanotechnology, applied physics, and electrical and electronics engineering.
Author: Ali Javey
Publisher: Springer Science & Business Media
ISBN: 0387692851
Category : Technology & Engineering
Languages : en
Pages : 275
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Book Description
This book provides a complete overview of the field of carbon nanotube electronics. It covers materials and physical properties, synthesis and fabrication processes, devices and circuits, modeling, and finally novel applications of nanotube-based electronics. The book introduces fundamental device physics and circuit concepts of 1-D electronics. At the same time it provides specific examples of the state-of-the-art nanotube devices.
Author: Dharmendra Singh Yadav
Publisher: CRC Press
ISBN: 1003816266
Category : Technology & Engineering
Languages : en
Pages : 306
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Book Description
Advanced Field-Effect Transistors: Theory and Applications offers a fresh perspective on the design and analysis of advanced field-effect transistor (FET) devices and their applications. The text emphasizes both fundamental and new paradigms that are essential for upcoming advancement in the field of transistors beyond complementary metal–oxide–semiconductors (CMOS). This book uses lucid, intuitive language to gradually increase the comprehension of readers about the key concepts of FETs, including their theory and applications. In order to improve readers’ learning opportunities, Advanced Field-Effect Transistors: Theory and Applications presents a wide range of crucial topics: Design and challenges in tunneling FETs Various modeling approaches for FETs Study of organic thin-film transistors Biosensing applications of FETs Implementation of memory and logic gates with FETs The advent of low-power semiconductor devices and related implications for upcoming technology nodes provide valuable insight into low-power devices and their applicability in wireless, biosensing, and circuit aspects. As a result, researchers are constantly looking for new semiconductor devices to meet consumer demand. This book gives more details about all aspects of the low-power technology, including ongoing and prospective circumstances with fundamentals of FET devices as well as sophisticated low-power applications.
Author: Shubham Sahay
Publisher: John Wiley & Sons
ISBN: 1119523532
Category : Technology & Engineering
Languages : en
Pages : 496
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Book Description
A comprehensive one-volume reference on current JLFET methods, techniques, and research Advancements in transistor technology have driven the modern smart-device revolution—many cell phones, watches, home appliances, and numerous other devices of everyday usage now surpass the performance of the room-filling supercomputers of the past. Electronic devices are continuing to become more mobile, powerful, and versatile in this era of internet-of-things (IoT) due in large part to the scaling of metal-oxide semiconductor field-effect transistors (MOSFETs). Incessant scaling of the conventional MOSFETs to cater to consumer needs without incurring performance degradation requires costly and complex fabrication process owing to the presence of metallurgical junctions. Unlike conventional MOSFETs, junctionless field-effect transistors (JLFETs) contain no metallurgical junctions, so they are simpler to process and less costly to manufacture.JLFETs utilize a gated semiconductor film to control its resistance and the current flowing through it. Junctionless Field-Effect Transistors: Design, Modeling, and Simulation is an inclusive, one-stop referenceon the study and research on JLFETs This timely book covers the fundamental physics underlying JLFET operation, emerging architectures, modeling and simulation methods, comparative analyses of JLFET performance metrics, and several other interesting facts related to JLFETs. A calibrated simulation framework, including guidance on SentaurusTCAD software, enables researchers to investigate JLFETs, develop new architectures, and improve performance. This valuable resource: Addresses the design and architecture challenges faced by JLFET as a replacement for MOSFET Examines various approaches for analytical and compact modeling of JLFETs in circuit design and simulation Explains how to use Technology Computer-Aided Design software (TCAD) to produce numerical simulations of JLFETs Suggests research directions and potential applications of JLFETs Junctionless Field-Effect Transistors: Design, Modeling, and Simulation is an essential resource for CMOS device design researchers and advanced students in the field of physics and semiconductor devices.
