High-power, Picosecond Pulse Generation from Q-switched Diode Lasers

High-power, Picosecond Pulse Generation from Q-switched Diode Lasers PDF Author: Sheng-Hui Yang
Publisher:
ISBN:
Category : Diodes, Switching
Languages : en
Pages : 430

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High-power, Picosecond Pulse Generation from Q-switched Diode Lasers

High-power, Picosecond Pulse Generation from Q-switched Diode Lasers PDF Author: Sheng-Hui Yang
Publisher:
ISBN:
Category : Diodes, Switching
Languages : en
Pages : 430

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Flexible Generation of Picosecond Laser Pulses in the Infrared and Green Spectral Range by Gain-Switching of Semiconductor Lasers

Flexible Generation of Picosecond Laser Pulses in the Infrared and Green Spectral Range by Gain-Switching of Semiconductor Lasers PDF Author: Sina Riecke
Publisher: Cuvillier Verlag
ISBN: 3736936524
Category : Science
Languages : en
Pages : 136

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Book Description
Picosecond laser pulses find diverse applications for example in material processing as well as in analysis and sensing. Fluorescence lifetime spectroscopy in particular requires pulses with variable repetition rate and moderate pulse energy. While suitable pulses in the red and blue spectral range can be provided by gain-switched laser diodes, the generation of green laser pulses requires a more elaborate setup based on second harmonic generation. The starting point is a gain-switched infrared distributed-feedback laser diode. The optimization of the laser design and the operating conditions allows to generate spectrally narrow picosecond pulses with a peak power above 1 W. Different gain media are compared for further amplification of these pulses, and options for the miniaturization of the master-oscillator power-amplifier system are explored. The resulting intense infrared pulses are then used for second harmonic generation of green picoseconds pulses. Their peak power of above 5 W exceeds all previous green pulse sources with variable repetition rate. In terms of pulse energy and background suppression, the reported green pulses are thus ideally suited for fluorescence lifetime spectroscopy

High Voltage Picosecond Pulse Generation Utilizing Lasers

High Voltage Picosecond Pulse Generation Utilizing Lasers PDF Author: R. Heintz
Publisher:
ISBN:
Category :
Languages : en
Pages : 14

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A mod-locked Q-switched Nd:YAG laser is used to generate a train of light pulses of approximately 70 picoseconds duration. The energy in these laser pulses are of the order of 2 milli-joules. The train of pulses are then passed through a switchout so that a single pulse is selected. This single pulse then strikes a chromium doped GaAs semiconductor switch which then conducts. If a high voltage supply is connected to one end of the switch and a load is connected to the other end, then the load will observe an electrical pulse which is half the amplitude of the d.c. voltage and of the order of 100-200 picosecond duration. The width of the electrical pulse is determined by the width of the laser pulse and of the characteristics of the transmission line over which the GaAs is mounted. (Author).

The Generation and Propagation of Sub-picosecond, High-peak-power, Laser Pilses

The Generation and Propagation of Sub-picosecond, High-peak-power, Laser Pilses PDF Author: Alan Michael Braun
Publisher:
ISBN:
Category :
Languages : en
Pages : 350

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Generating Picosecond Pulses from Q-switched Microchip Lasers

Generating Picosecond Pulses from Q-switched Microchip Lasers PDF Author: Alexander Craig Butler
Publisher:
ISBN:
Category : Laser pulses, Ultrashort
Languages : en
Pages : 0

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Since their first demonstration in the 1960s, picosecond laser pulses have initiated and defined the area of ultrafast laser physics. Their ability to generate a burst of high-intensity, coherent light has opened up areas of science and enabled the observation of events that would otherwise remain out of the realm of human understanding. -- The particular mechanism commonly associated with picosecond pulse generation is mode-locking. These systems are typically complex, bulky and correspondingly expensive. A compact, cheap and robust option that produces comparable pulses would be of great value to the scientific and engineering communities. To this end, we examine the growing area of Q-switched microchip lasers: simple and compact devices that generate sub-nanosecond pulses by virtue of extremely reduced resonator cavity lengths. Incorporation of a passive Q-switch device, a semiconductor saturable absorber mirror or SESAM, enables truly minimal cavity lengths, and therefore minimal pulse durations, to be accessed. -- In this thesis we explore the limits of generating the shortest pulses from such microchip lasers. We develop a comprehensive numerical simulation model, based on the laser rate equations, to effectively model SESAM Q-switched microchip lasers. We incorporate additional phenomena such as two-photon absorption (TPA) in the Q-switch and SESAM etalons to derive a complete picture of the abilities of these micro-lasers. We show that TPA will increasingly affect the performance of these lasers, as shorter pulses are generated, and suspect that our model underestimates its effect on our experimental results. We examine the switching dynamics of the SESAM and describe the role of relaxation oscillations in the switching process, as well as demonstrating controlled partial switching. Scaling dependencies between laser component parameters and laser performance are drawn, providing guidelines for development of these lasers. We examine these relationships in experiment and verify the key relationship between short cavities and short pulses. We demonstrate a laser with record short pulses of 22 ps duration by extending the scaling of these lasers to the shortest demonstrated cavity length of 110 μm. -- To alleviate the low efficiency associated with lasers using thin gain media, we propose, model and develop an energy-scavenging amplification scheme. We demonstrate that a complete, amplified Q-switched microchip laser system has the potential to rival amplified mode-locked systems in generating few-picosecond, microjoule pulses, although practical validation of this will approach require careful laser engineering.

Handbook of Laser Technology and Applications: Laser design and laser systems

Handbook of Laser Technology and Applications: Laser design and laser systems PDF Author: Colin E. Webb
Publisher: CRC Press
ISBN: 9780750309639
Category : Technology & Engineering
Languages : en
Pages : 1282

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Solid-State Mid-Infrared Laser Sources

Solid-State Mid-Infrared Laser Sources PDF Author: Irina T. Sorokina
Publisher: Springer Science & Business Media
ISBN: 3540364919
Category : Science
Languages : en
Pages : 600

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Book Description
This collection of authoritative reviews by leading experts provides a broad and instructive introduction to the most advanced techniques for generating coherent light in the mid-infrared region of the spectrum. With a wealth of up-to-date references – also available online.

Ultrafast Lasers

Ultrafast Lasers PDF Author: Martin E. Fermann
Publisher: CRC Press
ISBN: 9780203910207
Category : Science
Languages : en
Pages : 808

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Book Description
Covering high-energy ultrafast amplifiers and solid-state, fiber, and diode lasers, this reference examines recent developments in high-speed laser technology. It presents a comprehensive survey of ultrafast laser technology, its applications, and future trends in various scientific and industrial areas. Topics include: micromachining applications

888 nm pumping of Nd:YVO4 for high-power TEM00 lasers

888 nm pumping of Nd:YVO4 for high-power TEM00 lasers PDF Author: Louis McDonagh
Publisher: Cuvillier Verlag
ISBN: 3736930283
Category : Science
Languages : en
Pages : 180

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Book Description
For the last decade, neodymium-doped orthovanadate has established itself as the active material of choice for commercial solid-state lasers emitting in the 1 µm range, with output powers from several hundred milliwatts to a few tens of watts, in continuous-wave, short nanosecond Q-switched, or picosecond modelocked pulsed regimes. Its main advantages over other Nd-doped hosts such as YAG are a large stimulated-emission cross section leading to a high gain, a strong pump absorption allowing the efficient mode-matching of tightly-focused pump light, and a natural birefringence resulting in a continuously polarized output. The main drawbacks, however, are rather poor mechanical characteristics and strong thermal lensing, effectively limiting the maximum applicable pump power before excessively strong and aberrated thermal lensing prevents an efficient operation in a diffraction-limited beam, and ultimately the crystal’s fracture. Put aside the power limitation, the association of vanadate with diode end pumping allows for the realization of highly efficient and reliable laser sources based on well-known technologies, which provides an advantage in terms of manufacturability and cost-effectiveness over other high-potential technologies such as disks and fibers. This thesis introduces a novel pumping technique for Nd:YVO4 that allows for the realization of significantly higher-power laser sources with a high optical-to-optical efficiency and diffraction-limited beam quality, while keeping the benefits of a well-established technology. It consists in pumping at a wavelength of 888 nm instead of the classic 808 nm, providing a low and isotropic absorption, which results in a smooth distribution of the absorbed pump light in long crystals, effectively limiting the deleterious effects of high inversion density such as crystal end-facet bulging, high crystal temperature, aberrated thermal lensing, and upconversion. After presenting vanadate’s spectroscopic and physical characteristics, a complete analysis of the heatgenerating effects is performed, allowing for side-by-side simulations of the thermal effects in practical 808 nm and 888 nm pumped systems, and for an evaluation of their respective thermal lensing behaviors. Continuous-wave operation was thoroughly investigated, first in a multi-transversal mode oscillator to assess the maximum optical efficiency with optimum pump-mode matching and the thermal lensing characteristics. A TEM00 resonator was then developed with a single crystal and one pump diode, providing 60 W of output power with an optical efficiency of 55% and a beam quality of M2 = 1.05. This resonator was symmetrically replicated to form a periodic resonator, providing 120 W of output with the same optical efficiency and beam quality. This two-crystal configuration was then modified to an oscillator-amplifier configuration, providing a single-pass extraction efficiency of 53% and a total oscillator-amplifier output of 117 W without any beam-quality degradation. Intracavity doubling of the one and two-crystal configurations was achieved by inserting a non-critically phase-matched LiB5O3 (LBO) non-linear crystal in the resonator, providing up to 62 W of diffraction-limited green light at 532 nm with low-noise characteristics thanks to a large number of oscillating modes, thus limiting the effects of the “green problem”. A strong industrial interest resides in Q-switched lasers emitting nanosecond pulses, particularly with a high average power, high pulse repetition rate, and pulse durations of a few to several tens of nanoseconds. Achieving high-frequency and short-pulse operation both require a high gain, which explains the domination of Nd:YVO4 over lower-gain materials such as Nd:YAG or Yb:YAG. Thus, an acousto-optically Q-switched oscillator was demonstrated with 50 W output power and 28 ns pulse duration at 50 kHz. Pulse duration, however, is inversely proportional to the pulse energy, so that an increase in repetition rate inevitably results in an almost linear increase in pulse width. A cavity-dumped Q-switched oscillator was built to circumvent this limitation, the pulse length being defined by the cavity roundtrip time and the electro-optic cell switching time. It provided a constant pulse duration of 6 ns up to a repetition rate of 100 kHz and a maximum output power of 47 W. Such short pulse durations are normally available with output powers of a few watts from Q-switched lasers, and conversely Q-switched lasers of similarly high output power deliver pulses of several tens to over 100 ns in duration. There exists another strong interest in high average power quasi-cw picosecond sources, which allow for the efficient generation of green and UV radiation, or even red-green-blue for laser video projection. Passive mode locking with a semiconductor saturable absorber mirror (SESAM) is the preferred technique employed for the stable and self-starting generation of picosecond pulse trains, yet a high gain is necessary for achieving high repetition rates while avoiding the Q-switched mode-locking regime. Thus SESAM mode locking was applied to an 888 nm pumped oscillator, achieving 57 W of output power at a repetition-rate of 110 MHz and a pulse duration of 33 ps. Its output was efficiently amplified in a single pass up to 111 W without any beam quality, temporal, or spectral degradation. The high peak power of 30 kW allowed for the generation of 87 W of second harmonic at 532 nm with an efficiency of 80%, and 35 W of 355 nm third harmonic with a conversion efficiency of 33% in LBO crystals. The wide range of high-power systems demonstrated in this work illustrate the benefits of the optimized pumping of Nd:YVO4 at 888 nm, maintaining its highly-desirable characteristics such as a high gain and a polarized output while extending its power capabilities far beyond regular 808 nm pumped systems. This improvement should allow Nd:YVO4 systems to compete with high-power technologies such as disks and fibers, which often struggle in the generation of short pulses because of their low gain and strong non-linear effects, respectively.

Ultrafast Photonics

Ultrafast Photonics PDF Author: A. Miller
Publisher: CRC Press
ISBN: 9781420033212
Category : Science
Languages : en
Pages : 382

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Book Description
Ultrafast photonics has become an interdisciplinary topic of high international research interest because of the spectacular development of compact and efficient lasers producing optical pulses with durations in the femtosecond time domain. Present day long-haul telecommunications systems are almost entirely based on the transmission of short burst