High-Mobility Group-IV Materials and Devices: Volume 809 PDF Download
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Author: Materials Research Society. Meeting
Publisher:
ISBN:
Category : Technology & Engineering
Languages : en
Pages : 328
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Book Description
The MRS Symposium Proceeding series is an internationally recognised reference suitable for researchers and practitioners. This book, first published in 2004, brings together researchers interested in strained SiGe, strain-relaxed buffers, strained Si on bulk Si and on SOI, SiGe on SOI, Ge substrates, and Ge on insulator.
Author: Materials Research Society. Meeting
Publisher:
ISBN:
Category : Technology & Engineering
Languages : en
Pages : 328
Get Book Here
Book Description
The MRS Symposium Proceeding series is an internationally recognised reference suitable for researchers and practitioners. This book, first published in 2004, brings together researchers interested in strained SiGe, strain-relaxed buffers, strained Si on bulk Si and on SOI, SiGe on SOI, Ge substrates, and Ge on insulator.
Author: Matty Caymax
Publisher: Cambridge University Press
ISBN: 9781107409248
Category : Technology & Engineering
Languages : en
Pages : 322
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Book Description
In the ever more-demanding quest for increased performance in the microelectronics industry, device concepts such as fully depleted SOI MOSFETs and multiple-gate structures are probably the last step in plain Si technology. In order to keep pace with Moore's law, materials that show enhanced carrier mobilities for both holes and electrons are needed in order to enhance drive in both low-power and high-performance MOS applications. It is clear that the semiconductor community is considering the use of strained layers of SiGe and Si in their most advanced MOS device concepts. This book, first published in 2004, brings together researchers interested in strained SiGe, strain-relaxed buffers, strained Si on bulk Si and on SOI, SiGe on SOI, Ge substrates, and Ge on insulator. Topics include: strained Si and SRBs on bulk Si; strained Si and SRBs on insulator; characterization and defects in strained layers; Ge substrates; strained Si and SiGe devices; doping and diffusion on Group-IV materials; and SiGe layers and high-k and high-mobility substrates.
Author: Materials Research Society. Meeting
Publisher:
ISBN:
Category : Science
Languages : en
Pages : 440
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Book Description
Broad interest and steady progress in the area of Group-IV (Si:Ge:C) semiconductor nanostructures, including quantum dots, wires and wells, has produced a new class of functional materials and devices with characteristic dimensions less than 50nm. This volume brings together scientists from different disciplines to discuss fabrication and characterization techniques and optical and transport properties, as well as applications of Group-IV semiconductor nanostructures. Fields such as photonic systems, nanocrystal memories, light-emitting and THz devices, nanowire-based interconnections and transistors are addressed. Topics include: nanoscale silicon-based photonic systems; Si/SiGe/SiN heterostructures and devices; Si/SiGe quantum cascade laser for terahertz; three-dimensional Si/SiGe nanostructures; Si nanocrystals and porous Si- light-emitting properties; Si nanocrystals and porous Si - other properties; Group-IV semiconductor nanowires; and rare-earth-doped Group-IV semiconductor nanostructures.
Author: Materials Research Society. Meeting
Publisher:
ISBN:
Category : Technology & Engineering
Languages : en
Pages : 328
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Book Description
Solar-cell performance is critically dependent on the optical and electrical properties of their constituent materials. In order to obtain significant improvements in performance for future generations of photovoltaic devices, it will be necessary to either improve the properties of existing materials or engineer new materials and device structures. This book focuses on materials issues and advances for photovoltaics. Topics include: dye-sensitized solar cells; nanoparticle/hybrid solar cells; polymer-based devices; small molecule-based devices; III-V semiconductors; II-VI semiconductors and transparent conducting oxides and silicon thin films.
Author: Materials Research Society. Meeting
Publisher:
ISBN:
Category : Technology & Engineering
Languages : en
Pages : 608
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Book Description
The MRS Symposium Proceeding series is an internationally recognised reference suitable for researchers and practitioners. This book, first published in 2005, offers a scientific and technical discussion and analysis of modifications induced by extreme conditions of the space environment.
Author: Materials Research Society. Meeting
Publisher:
ISBN:
Category : Technology & Engineering
Languages : en
Pages : 568
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Book Description
The MRS Symposium Proceeding series is an internationally recognised reference suitable for researchers and practitioners.
Author: Materials Research Society. Meeting
Publisher:
ISBN:
Category : Technology & Engineering
Languages : en
Pages : 176
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Book Description
The MRS Symposium Proceeding series is an internationally recognised reference suitable for researchers and practitioners.
Author: Materials Research Society. Meeting
Publisher:
ISBN:
Category : Technology & Engineering
Languages : en
Pages : 304
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Book Description
The MRS Symposium Proceeding series is an internationally recognised reference suitable for researchers and practitioners.
Author: Michael Dudley
Publisher: Cambridge University Press
ISBN: 9781558997653
Category : Technology & Engineering
Languages : en
Pages : 344
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Book Description
Silicon carbide (SiC) is a wide-bandgap semiconductor that can operate at temperatures well above 300ºC, where silicon cannot perform. In addition, due to a high thermal conductivity equal to copper at room temperature, SiC is an ideal candidate for operation in harsh environments and at high-power levels. Rapid advances in SiC materials and devices have recently resulted in implementation of SiC-based electronic systems, and the impact of these devices is expected to significantly increase in the next several years. This book documents the most recent results on growth of bulk and epitaxial layers, physical and structural properties, process technology, and device development obtained since the 10th International Conference on Silicon Carbide and Related Materials 2003 (ICSCRM2003) held in Lyon, France. Extended defects in silicon carbide are highlighted. The nature of defects induced by forward biasing of bipolar devices, as well as methods to suppress the degradation, are addressed.
Author: Materials Research Society. Meeting
Publisher:
ISBN:
Category : Science
Languages : en
Pages : 318
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Book Description
The MRS Symposium Proceeding series is an internationally recognised reference suitable for researchers and practitioners. This book, first published in 2004, presents advances in fundamental understanding, development, and applications of chemical-mechanical polishing (CMP).
