Author: Materials Research Society. Meeting
Publisher:
ISBN:
Category : Technology & Engineering
Languages : en
Pages : 328
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Book Description
The MRS Symposium Proceeding series is an internationally recognised reference suitable for researchers and practitioners. This book, first published in 2004, brings together researchers interested in strained SiGe, strain-relaxed buffers, strained Si on bulk Si and on SOI, SiGe on SOI, Ge substrates, and Ge on insulator.
Author: Matty Caymax
Publisher: Cambridge University Press
ISBN: 9781107409248
Category : Technology & Engineering
Languages : en
Pages : 322
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Book Description
In the ever more-demanding quest for increased performance in the microelectronics industry, device concepts such as fully depleted SOI MOSFETs and multiple-gate structures are probably the last step in plain Si technology. In order to keep pace with Moore's law, materials that show enhanced carrier mobilities for both holes and electrons are needed in order to enhance drive in both low-power and high-performance MOS applications. It is clear that the semiconductor community is considering the use of strained layers of SiGe and Si in their most advanced MOS device concepts. This book, first published in 2004, brings together researchers interested in strained SiGe, strain-relaxed buffers, strained Si on bulk Si and on SOI, SiGe on SOI, Ge substrates, and Ge on insulator. Topics include: strained Si and SRBs on bulk Si; strained Si and SRBs on insulator; characterization and defects in strained layers; Ge substrates; strained Si and SiGe devices; doping and diffusion on Group-IV materials; and SiGe layers and high-k and high-mobility substrates.
Author: Nadine Collaert
Publisher: Woodhead Publishing
ISBN: 0081020627
Category : Technology & Engineering
Languages : en
Pages : 390
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Book Description
High Mobility Materials for CMOS Applications provides a comprehensive overview of recent developments in the field of (Si)Ge and III-V materials and their integration on Si. The book covers material growth and integration on Si, going all the way from device to circuit design. While the book's focus is on digital applications, a number of chapters also address the use of III-V for RF and analog applications, and in optoelectronics. With CMOS technology moving to the 10nm node and beyond, however, severe concerns with power dissipation and performance are arising, hence the need for this timely work on the advantages and challenges of the technology. Addresses each of the challenges of utilizing high mobility materials for CMOS applications, presenting possible solutions and the latest innovations Covers the latest advances in research on heterogeneous integration, gate stack, device design and scalability Provides a broad overview of the topic, from materials integration to circuits
Author: Roberto Fornari
Publisher: Woodhead Publishing
ISBN: 008102097X
Category : Technology & Engineering
Languages : en
Pages : 596
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Book Description
Single Crystals of Electronic Materials: Growth and Properties is a complete overview of the state-of-the-art growth of bulk semiconductors. It is not only a valuable update on the body of information on crystal growth of well-established electronic materials, such as silicon, III-V, II-VI and IV-VI semiconductors, but also includes chapters on novel semiconductors, such as wide bandgap oxides like ZnO, Ga2, O3, In2, O3, Al2, O3, nitrides (AIN and GaN), and diamond. Each chapter focuses on a specific material, providing a comprehensive overview that includes applications and requirements, thermodynamic properties, schematics of growth methods, and more. Presents the latest research and most comprehensive overview of both standard and novel semiconductors Provides a systematic examination of important electronic materials, including their applications, growth methods, properties, technologies and defect and doping issues Takes a close look at emerging materials, including wide bandgap oxides, nitrides and diamond
Author: Materials Research Society. Meeting
Publisher:
ISBN:
Category : Science
Languages : en
Pages : 440
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Book Description
Broad interest and steady progress in the area of Group-IV (Si:Ge:C) semiconductor nanostructures, including quantum dots, wires and wells, has produced a new class of functional materials and devices with characteristic dimensions less than 50nm. This volume brings together scientists from different disciplines to discuss fabrication and characterization techniques and optical and transport properties, as well as applications of Group-IV semiconductor nanostructures. Fields such as photonic systems, nanocrystal memories, light-emitting and THz devices, nanowire-based interconnections and transistors are addressed. Topics include: nanoscale silicon-based photonic systems; Si/SiGe/SiN heterostructures and devices; Si/SiGe quantum cascade laser for terahertz; three-dimensional Si/SiGe nanostructures; Si nanocrystals and porous Si- light-emitting properties; Si nanocrystals and porous Si - other properties; Group-IV semiconductor nanowires; and rare-earth-doped Group-IV semiconductor nanostructures.
Author: E. Simoen
Publisher: The Electrochemical Society
ISBN: 1607685485
Category : Semiconductors
Languages : en
Pages : 315
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Book Description
Author: D. Harame
Publisher: The Electrochemical Society
ISBN: 1566778255
Category : Science
Languages : en
Pages : 1066
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Book Description
Advanced semiconductor technology is depending on innovation and less on "classical" scaling. SiGe, Ge, and Related Compounds has become a key component in the arsenal in improving semiconductor performance. This symposium discusses the technology to form these materials, process them, FET devices incorporating them, Surfaces and Interfaces, Optoelectronic devices, and HBT devices.
Author: Yoshio Nishi
Publisher: CRC Press
ISBN: 1351829823
Category : Technology & Engineering
Languages : en
Pages : 3276
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Book Description
Retaining the comprehensive and in-depth approach that cemented the bestselling first edition's place as a standard reference in the field, the Handbook of Semiconductor Manufacturing Technology, Second Edition features new and updated material that keeps it at the vanguard of today's most dynamic and rapidly growing field. Iconic experts Robert Doering and Yoshio Nishi have again assembled a team of the world's leading specialists in every area of semiconductor manufacturing to provide the most reliable, authoritative, and industry-leading information available. Stay Current with the Latest Technologies In addition to updates to nearly every existing chapter, this edition features five entirely new contributions on... Silicon-on-insulator (SOI) materials and devices Supercritical CO2 in semiconductor cleaning Low-κ dielectrics Atomic-layer deposition Damascene copper electroplating Effects of terrestrial radiation on integrated circuits (ICs) Reflecting rapid progress in many areas, several chapters were heavily revised and updated, and in some cases, rewritten to reflect rapid advances in such areas as interconnect technologies, gate dielectrics, photomask fabrication, IC packaging, and 300 mm wafer fabrication. While no book can be up-to-the-minute with the advances in the semiconductor field, the Handbook of Semiconductor Manufacturing Technology keeps the most important data, methods, tools, and techniques close at hand.
Author: Ye Zhou
Publisher: Royal Society of Chemistry
ISBN: 1788019288
Category : Technology & Engineering
Languages : en
Pages : 463
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Book Description
Ambipolar materials represent a class of materials where positive and negative charge carriers can both transport concurrently. In recent years, a diverse range of materials have been synthesized and utilized for implementing ambipolar charge transport, with applications in high‐density data storage, field effect transistors, nanotransitors, photonic memory, biomaterial-based memories and artificial synapses. This book highlights recent development of ambipolar materials involving materials design, fundamental principles, interface modifications, device structures, ambipolar characteristics and promising applications. Challenges and prospects for investigating ambipolar materials in electronics and optoelectronics are also discussed. With contributions from global leaders in the field, this title will appeal to graduate students and researchers who want to understand the design, materials characteristics, device operation principles, specialized device application and mechanisms of the latest ambipolar materials.
Author: Nadine Collaert
Publisher: Elsevier
ISBN: 0128234504
Category : Technology & Engineering
Languages : en
Pages : 369
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Book Description
New Materials and Devices for 5G Applications and Beyond focuses on the materials, device architectures and enabling integration schemes for 5G applications and emerging technologies. It gives a comprehensive overview of the trade-offs, challenges and unique properties of novel upcoming technologies. Starting from the application side and its requirements, the book examines different technologies under consideration for the different functions, both more conventional to exploratory, and within this context the book provides guidance to the reader on how to possibly optimize the system for a particular application. This book aims at guiding the reader through the technologies required to enable 5G applications, with the main focus on mm-wave frequencies, up to THz. New Materials and Devises for 5G Applications and Beyond is suitable for industrial researchers and development engineers, and researchers in materials science, device engineering and circuit design. Reviews challenges and emerging opportunities for materials, devices, and integration to enable 5G technologies Includes discussion of technologies such as RF-MEMs, RF FINFETs, and transistors based on current and emerging materials (InP, GaN, etc.) Focuses on mm-wave frequencies up to the terahertz regime
