High-frequency AlGaN/GaN HEMTs Fabrication and Noise Characterization PDF Download
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Author: Alexei Vasilievich Vertiatchikh
Publisher:
ISBN:
Category :
Languages : en
Pages : 280
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Book Description
Author: Alexei Vasilievich Vertiatchikh
Publisher:
ISBN:
Category :
Languages : en
Pages : 280
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Book Description
Author: Robert F Davis
Publisher: World Scientific
ISBN: 9814482692
Category : Technology & Engineering
Languages : en
Pages : 295
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Book Description
The unique materials properties of GaN-based semiconductors have stimulated a great deal of interest in research and development regarding nitride materials growth and optoelectronic and nitride-based electronic devices. High electron mobility and saturation velocity, high sheet carrier concentration at heterojunction interfaces, high breakdown field, and low thermal impedance of GaN-based films grown over SiC or bulk AlN substrates make nitride-based electronic devices very promising. The chemical inertness of nitrides is another key property.This volume, written by experts on different aspects of nitride technology, addresses the entire spectrum of issues related to nitride materials and devices, and it will be useful for technologists, scientists, engineers, and graduate students who are working on wide bandgap materials and devices. The book can also be used as a supplementary text for graduate courses on wide bandgap semiconductor technology.
Author: Weikai Xu
Publisher:
ISBN:
Category :
Languages : en
Pages : 116
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Book Description
AlGaN/GaN HEMTs have shown great performance in high frequency and high power applications. However, since the fabrication process of GaN devices is developed in recent years, it is not as mature as the silicon technology. Device reliability is one of the major issues that limit AlGaN/GaN HEMTs reaching their potential. In this work, unstressed and stressed AlGaN/GaN HEMTs are studied through I-V characteristics and low frequency noise measurements. Both the channel and the gate stack were examined to reveal the origins for device failure. Through noise measurement of channel, traps are found at AlGaN-GaN interface. A drain noise model is established to extract noise information of the gated part of the channel. For unstressed device the Hooge mobility fluctuation model dominates the noise mechanism, while the carrier number fluctuation model fits with the data of stressed devices. Hooge parameters and trap density are extracted for the channel part.
Author: Trupti Ranjan Lenka
Publisher: Springer Nature
ISBN: 9811921652
Category : Technology & Engineering
Languages : en
Pages : 246
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Book Description
This book covers two broad domains: state-of-the-art research in GaN HEMT and Ga2O3 HEMT. Each technology covers materials system, band engineering, modeling and simulations, fabrication techniques, and emerging applications. The book presents basic operation principles of HEMT, types of HEMT structures, and semiconductor device physics to understand the device behavior. The book presents numerical modeling of the device and TCAD simulations for high-frequency and high-power applications. The chapters include device characteristics of HEMT including 2DEG density, Id-Vgs, Id-Vds, transconductance, linearity, and C-V. The book emphasizes the state-of-the-art fabrication techniques of HEMT and circuit design for various applications in low noise amplifier, oscillator, power electronics, and biosensor applications. The book focuses on HEMT applications to meet the ever-increasing demands of the industry, innovation in terms of materials, design, modeling, simulation, processes, and circuits. The book will be primarily helpful to undergraduate/postgraduate, researchers, and practitioners in their research.
Author: Chieh Kai Yang
Publisher:
ISBN:
Category :
Languages : en
Pages : 109
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Book Description
Abstract: Any defect site existing in the AlGaN/GaN HEMTs can be electrically active during device operation. The activated defect site not only could lead to a degradation in the output characteristics but may introduce additional nonlinearity which seriously downgrades the values of devices for various applications. This motivates us to study the detailed path experimentally and theoretically how an electrically-activated defect site could impact the device performances during practical device operation. In this study, the g oal is (1) to give device engineers ideas on how further improvements can be devised to strengthen the existing GaN technology and (2) to provide circuit designers with better understanding on how to use GaN devices more efficiently for the development of reliable commercial GaN products for higher power applications in wireless systems. Single tone characterization results of AlGaN/GaN HEMTs for Class A operation are presented and compared. A new combined large signal network analyzer / deep level optical spectroscopy system is utilized to study the impact of illumination on the CW large-signal load line and small-signal S-parameters variations to identify the possible energy level of the trapping center responsible for the degradation of the device performance. A new pulsed-IV pulsed-RF "coldFET" technique is introduced to extract parasitic elements existing in the access regions of AlGaN/GaN HEMTs. The observation of bias-dependence is detailed and a simple semi-physical model is proposed which provides a satisfactory description of experimental results. The low-frequency noise, an important figure of merit in terms of reliability, is briefly-reviewed. Additive phase noise measurements are presented and the effects of illumination and load impedance are examined. A physical expression is derived and simulated which successfully establishes a relationship between the access resistance and the low-frequency noise and provides a qualitative description of the measurement results.
Author: Anwar Hasan Jarndal
Publisher: kassel university press GmbH
ISBN: 3899582586
Category :
Languages : en
Pages : 136
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Book Description
Author: D. Nirmal
Publisher: CRC Press
ISBN: 0429862520
Category : Science
Languages : en
Pages : 446
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Book Description
This book focusses on III-V high electron mobility transistors (HEMTs) including basic physics, material used, fabrications details, modeling, simulation, and other important aspects. It initiates by describing principle of operation, material systems and material technologies followed by description of the structure, I-V characteristics, modeling of DC and RF parameters of AlGaN/GaN HEMTs. The book also provides information about source/drain engineering, gate engineering and channel engineering techniques used to improve the DC-RF and breakdown performance of HEMTs. Finally, the book also highlights the importance of metal oxide semiconductor high electron mobility transistors (MOS-HEMT). Key Features Combines III-As/P/N HEMTs with reliability and current status in single volume Includes AC/DC modelling and (sub)millimeter wave devices with reliability analysis Covers all theoretical and experimental aspects of HEMTs Discusses AlGaN/GaN transistors Presents DC, RF and breakdown characteristics of HEMTs on various material systems using graphs and plots
Author: Endalkachew Shewarega Mengistu
Publisher: kassel university press GmbH
ISBN: 3899583817
Category :
Languages : en
Pages : 153
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Author: Abhijit Biswas
Publisher: Springer Nature
ISBN: 9819904129
Category : Technology & Engineering
Languages : en
Pages : 568
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Book Description
This book covers the proceedings of the 8th International Conference on Microelectronics, Circuits, and Systems (Micro2021) having design and developments of devices, micro- and nanotechnologies, and electronic appliances. This book includes the latest developments and emerging research topics in material sciences, devices, microelectronics, circuits, nanotechnology, system design and testing, simulation, sensors, photovoltaics, optoelectronics, and its different applications. This book is of great attraction to researchers and professionals working in electronics, microelectronics, electrical, and computer engineering.
Author: Afzal Sikander
Publisher: Springer Nature
ISBN: 9819701546
Category :
Languages : en
Pages : 582
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Book Description
