Growth Optimization and Characterization of Reactively Sputtered Zirconium Nitride Thin Films for III-V Buffer Layer Applications PDF Download
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Author: David Ross McGregor
Publisher:
ISBN:
Category :
Languages : en
Pages : 81
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Keywords: thin films, sputtering, zirconium nitride.
Author: David Ross McGregor
Publisher:
ISBN:
Category :
Languages : en
Pages : 81
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Book Description
Keywords: thin films, sputtering, zirconium nitride.
Author:
Publisher:
ISBN:
Category :
Languages : en
Pages :
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Zirconium nitride (ZrN) thin films were deposited by reactive dc magnetron sputtering to assess the effects of processing conditions upon film properties. Processing conditions and parameters were optimized to generate films of completely oriented (111) ZrN on silicon to be used as buffer layers for the growth of gallium nitride A single and double Langmuir probe were used to determine trends in electron temperature, ion density, ionization fraction, and floating potential during reactive sputtering of zirconium in argon and nitrogen. Reactive gas concentration, deposition pressure, deposition temperature, cathode current, film thickness and substrate orientation were investigated as variable processing conditions. Four-point probe, scanning electron microscopy (SEM), transmission electron microscopy (TEM), Raman spectroscopy, and x-ray diffraction (XRD) were used to characterize thin films produced. The optimum growth conditions for the (111) oriented growth of ZrN, for this work, were found to occur during reactive magnetron sputtering at a deposition temperature of 500 & deg;C, a constant cathode current of 0.5 ampere, a deposition pressure of 15 mTorr, a reactive nitrogen gas concentration of 4% in argon, deposited on (111) oriented silicon, with a thickness on the order of 600 nanometers. Gallium nitride was then deposited on films of ZrN to assess the crystallinity of films produced. The lattice mismatch between (111) oriented ZrN and c-axis oriented GaN was calculated at 1.6%. Microscopic evaluation showed the films to be of columnar structure with dense grains and smooth surfaces. A change in preferred orientation was noticed as a function of increasing film thickness and cathode current and was determined to be due to an increase in ion channeling and bombardment energy.
Author: Tuomas Hänninen
Publisher: Linköping University Electronic Press
ISBN: 9176853748
Category :
Languages : en
Pages : 73
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Silicon nitride and silicon nitride-based ceramics have several favorable material properties, such as high hardness and good wear resistance, which makes them important materials for the coating industry. This thesis focuses the synthesis of silicon nitride, silicon oxynitride, and silicon carbonitride thin films by reactive magnetron sputtering. The films were characterized based on their chemical composition, chemical bonding structure, and mechanical properties to link the growth conditions to the film properties. Silicon nitride films were synthesized by reactive high power impulse magnetron sputtering (HiPIMS) from a Si target in Ar/N2 atmospheres, whereas silicon oxynitride films were grown by using nitrous oxide as the reactive gas. Silicon carbonitride was synthesized by two different methods. The first method was using acetylene (C2H2) in addition to N2 in a Si HiPIMS process and the other was co-sputtering of Si and C, using HiPIMS for Si and direct current magnetron sputtering (DCMS) for graphite targets in an Ar/N2 atmosphere. Langmuir probe measurements were carried out for the silicon nitride and silicon oxynitride processes and positive ion mass spectrometry for the silicon nitride processes to gain further understanding on the plasma conditions during film growth. The target current and voltage waveforms of the reactive HiPIMS processes were evaluated. The main deposition parameter affecting the nitrogen concentration of silicon nitride films was found to be the nitrogen content in the plasma. Films with nitrogen contents of 50 at.% were deposited at N2/Ar flow ratios of 0.3 and above. These films showed Si-N as the dominating component in Si 2p X-ray photoelectron spectroscopy (XPS) core level spectra and Si–Si bonds were absent. The substrate temperature and target power were found to affect the nitrogen content to a lower extent. The residual stress and hardness of the films were found to increase with the film nitrogen content. Another factors influencing the coating stress were the process pressure, negative substrate bias, substrate temperature, and HiPIMS pulse energy. Silicon nitride coatings with good adhesion and low levels of compressive residual stress were grown by using a pressure of 600 mPa, a substrate temperature below 200 °C, pulse energies below 2.5 Ws, and negative bias voltages up to 100 V. The elemental composition of silicon oxynitride films was shown to depend on the target power settings as well as on the nitrous oxide flow rate. Silicon oxide-like films were synthesized under poisoned target surface conditions, whereas films deposited in the transition regime between poisoned and metallic conditions showed higher nitrogen concentrations. The nitrogen content of the films deposited in the transition region was controlled by the applied gas flow rate. The applied target power did not affect the nitrogen concentration in the transition regime, while the oxygen content increased at decreasing target powers. The chemical composition of the films was shown to range from silicon-rich to effectively stoichiometric silicon oxynitrides, where no Si–Si contributions were found in the XPS Si 2p core level spectra. The film optical properties, namely the refractive index and extinction coefficient, were shown to depend on the film chemical bonding, with the stoichiometric films displaying optical properties falling between those of silicon oxide and silicon nitride. The properties of silicon carbonitride films were greatly influenced by the synthesis method. The films deposited by HiPIMS using acetylene as the carbon source showed silicon nitride-like mechanical properties, such as a hardness of ~ 20 GPa and compressive residual stresses of 1.7 – 1.9 GPa, up to film carbon contents of 30 at.%. At larger film carbon contents the films had increasingly amorphous carbon-like properties, such as densities below 2 g/cm3 and hardnesses below 10 GPa. The films with more than 30 at.% carbon also showed columnar morphologies in cross-sectional scanning electron microscopy, whereas films with lower carbon content showed dense morphologies. Due to the use of acetylene the carbonitride films contained hydrogen, up to ~ 15 at.%. The co-sputtered silicon carbonitride films showed a layered SiNx/CNx structure. The hardness of these films increased with the film carbon content, reaching a maximum of 18 GPa at a film carbon content of 12 at.%. Comparatively hard and low stressed films were grown by co-sputtering using a C target power of 1200 W for a C content around 12 at.%, a negative substrate bias less than 100 V, and a substrate temperature up to 340 °C.
Author: Zlatko Sitar
Publisher:
ISBN:
Category :
Languages : en
Pages : 326
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Author: Çağla Özgit-Akgün
Publisher: LAP Lambert Academic Publishing
ISBN: 9783659208232
Category :
Languages : en
Pages : 180
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III-nitride compound semiconductors (AlN, GaN, InN) and their alloys have emerged as versatile and high-performance materials for a wide range of electronic and optoelectronic device applications. Although high quality III-nitride thin films can be grown at high temperatures (>1000 C) with significant rates, deposition of these films on temperature-sensitive device layers and substrates necessitates the adaptation of low-temperature methods such as atomic layer deposition (ALD). When compared to other low-temperature thin film deposition techniques, ALD stands out with its self-limiting growth mechanism, which enables the deposition of highly uniform and conformal thin films with sub-angstrom thickness control. These unique characteristics make ALD a powerful method especially for depositing films on nanostructured templates, as well as preparing alloy thin films with well-defined compositions. This monograph reports on the development of low-temperature ( 200 C) plasma-assisted ALD processes for III-nitrides, and presents detailed characterization results for the deposited thin films and fabricated nanostructures."
Author: Tuomas Hänninen
Publisher:
ISBN:
Category :
Languages : en
Pages :
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Book Description
Silicon nitride and silicon nitride-based ceramics have several favorable material properties, such as high hardness and good wear resistance, which makes them important materials for the coating industry. This thesis focuses the synthesis of silicon nitride, silicon oxynitride, and silicon carbonitride thin films by reactive magnetron sputtering. The films were characterized based on their chemical composition, chemical bonding structure, and mechanical properties to link the growth conditions to the film properties. Silicon nitride films were synthesized by reactive high power impulse magnetron sputtering (HiPIMS) from a Si target in Ar/N 2 atmospheres, whereas silicon oxynitride films were grown by using nitrous oxide as the reactive gas. Silicon carbonitride was synthesized by two different methods. The first method was using acetylene (C 2 H 2 ) in addition to N 2 in a Si HiPIMS process and the other was co-sputtering of Si and C, using HiPIMS for Si and direct current magnetron sputtering (DCMS) for graphite targets in an Ar/N 2 atmosphere. Langmuir probe measurements were carried out for the silicon nitride and silicon oxynitride processes and positive ion mass spectrometry for the silicon nitride processes to gain further understanding on the plasma conditions during film growth. The target current and voltage waveforms of the reactive HiPIMS processes were evaluated. The main deposition parameter affecting the nitrogen concentration of silicon nitride films was found to be the nitrogen content in the plasma. Films with nitrogen contents of 50 at.% were deposited at N 2 /Ar flow ratios of 0.3 and above. These films showed Si-N as the dominating component in Si 2p X-ray photoelectron spectroscopy (XPS) core level spectra and Si–Si bonds were absent. The substrate temperature and target power were found to affect the nitrogen content to a lower extent. The residual stress and hardness of the films were found to increase with the film nitrogen content. Another factors influencing the coating stress were the process pressure, negative substrate bias, substrate temperature, and HiPIMS pulse energy. Silicon nitride coatings with good adhesion and low levels of compressive residual stress were grown by using a pressure of 600 mPa, a substrate temperature below 200 °C, pulse energies below 2.5 Ws, and negative bias voltages up to 100 V. The elemental composition of silicon oxynitride films was shown to depend on the target power settings as well as on the nitrous oxide flow rate. Silicon oxide-like films were synthesized under poisoned target surface conditions, whereas films deposited in the transition regime between poisoned and metallic conditions showed higher nitrogen concentrations. The nitrogen content of the films deposited in the transition region was controlled by the applied gas flow rate. The applied target power did not affect the nitrogen concentration in the transition regime, while the oxygen content increased at decreasing target powers. The chemical composition of the films was shown to range from silicon-rich to effectively stoichiometric silicon oxynitrides, where no Si–Si contributions were found in the XPS Si 2p core level spectra. The film optical properties, namely the refractive index and extinction coefficient, were shown to depend on the film chemical bonding, with the stoichiometric films displaying optical properties falling between those of silicon oxide and silicon nitride. The properties of silicon carbonitride films were greatly influenced by the synthesis method. The films deposited by HiPIMS using acetylene as the carbon source showed silicon nitride-like mechanical properties, such as a hardness of ~ 20 GPa and compressive residual stresses of 1.7 – 1.9 GPa, up to film carbon contents of 30 at.%. At larger film carbon contents the films had increasingly amorphous carbon-like properties, such as densities below 2 g/cm 3 and hardnesses below 10 GPa. The films with more than 30 at.% carbon also showed columnar morphologies in cross-sectional scanning electron microscopy, whereas films with lower carbon content showed dense morphologies. Due to the use of acetylene the carbonitride films contained hydrogen, up to ~ 15 at.%. The co-sputtered silicon carbonitride films showed a layered SiN x /CN x structure. The hardness of these films increased with the film carbon content, reaching a maximum of 18 GPa at a film carbon content of 12 at.%. Comparatively hard and low stressed films were grown by co-sputtering using a C target power of 1200 W for a C content around 12 at.%, a negative substrate bias less than 100 V, and a substrate temperature up to 340 °C.
Author:
Publisher:
ISBN:
Category : Ceramics
Languages : en
Pages : 972
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Author:
Publisher:
ISBN:
Category : Chemistry
Languages : en
Pages : 2726
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Author: Nanke Jiang
Publisher:
ISBN:
Category : Photovoltaic cells
Languages : en
Pages : 144
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This dissertation presents a study on the fabrication of zinc nitride and zinc oxy-nitride films, and related hetero-structures on glass, silicon and other substrates. The goals of this study include gaining fundamental understanding on the electrical and optical properties, the chemical-bonding states and the micro-structure of these materials and examining their potential for photovoltaic and other electronic and optoelectronic applications. Reactive radio-frequency (RF) magnetron sputtering was used as the deposition method, which potentially enables control of composition of the thin films, as well as fabrication of multilayer structures for the study of possible hetero-junctions between zinc nitride and zinc oxy-nitrides. Along with reactive sputtering, several other fabrication methods, such as thermal evaporation and solution (e.g. silver or carbon paste) painting, were used as auxiliaries where necessary. The characterization techniques employed include (i) x-ray based techniques (x-ray diffraction (XRD), x-ray photoelectron spectroscopy (XPS), energy dispersive x-ray spectroscopy (EDXS)), (ii) optical based methods (spectroscopic ellipsometry (SE), optical spectrophotometry, Raman spectroscopy), (iii) scanning electron microscopy (SEM), and (iv) electrical measurements (resistivity, Hall effect measurements, current-voltage and photovoltaic measurements). The cross-correlation between the deposition/post-deposition conditions and the physical properties of the films was investigated. The deposition conditions, such as the nitrogen (or oxygen) partial concentration in the sputtering gas mixture, substrate temperatures, total deposition pressure, as well as the post-deposition treatments such as thermal treatment and/or oxidation in ambient, were studied in detail. Zinc nitride, with a small fraction of "naturally" incorporated oxygen, is found to be a promising candidate for photovoltaic applications because of its optical and electrical properties. Also, the capability of property tuning for the zinc oxy-nitride material system was demonstrated by intentionally introducing varied amount oxygen into zinc nitride. In order to better understand the crystalline structure and the electronic band structure of these materials, first principle density functional theory (DFT) was used for computations of pure zinc nitride and the doping effects in it with both native elements (Zn, N) and copper family elements (Cu, Ag, Au) as possible p-type dopants. Atomic geometry, formation energy, as well as electronic structure of defects in zinc nitride were studied and a general consistency was observed between theoretically calculated and experimentally determined results. Defect density of states (DOS) suggest that among all three studied copper-family elements, copper is a good candidate for a p-type dopant. Technological insight and approaches to the fabrication of device-relevant structures were the other important outcomes of this work. Our studies showed that the fabrication of device-relevant ohmic contacts, rectifying metal-nitride junctions and p-n junctions was possible. Substantial photovoltaic action was observed in a single junction solar cell configuration that uses p-type zinc oxy-nitride as an absorber layer.
Author: Michael J. Paisley
Publisher:
ISBN:
Category :
Languages : en
Pages : 294
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