Growth of Heteroepitaxial Single Crystal Lead Magnesium Niobate-lead Titanate Thin Films on R-plane Sapphire Substrates PDF Download
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Author: Madhana Sunder
Publisher:
ISBN:
Category :
Languages : en
Pages : 314
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Author: Madhana Sunder
Publisher:
ISBN:
Category :
Languages : en
Pages : 314
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Author: Adam Matthew Scotch
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ISBN:
Category : Crystal growth
Languages : en
Pages : 248
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Relaxor-based ferroelectric single crystals of Pb(Mg1/3Nb 2/3)O3-PbTiO3 [PMN-PT] have been produced via the Seeded Polycrystal Conversion [SPC] technique. Polycrystalline precursors of PMN-PT are converted to single crystals by inducing the boundary of a seed crystal to migrate through a polycrystalline matrix. The quality of PMN-PT single crystals grown by SPC is directly influenced by the microstructure of the polycrystalline precursor. The goal of this work was to examine the factors that controlled the final microstructure of the matrix and grown single crystals and to characterize their effects on properties.
Author:
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Category :
Languages : en
Pages :
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The crystallographic orientation of a metal affects its surface energy and structure, and has profound implications for surface chemical reactions and interface engineering, which are important in areas ranging from optoelectronic device fabrication to catalysis. However, it can be very difficult and expensive to manufacture, orient, and cut single crystal metals along different crystallographic orientations, especially in the case of precious metals. One approach is to grow thin metal films epitaxially on dielectric substrates. In this work, we report on growth of Pt and Au films on MgO single crystal substrates of (100) and (110) surface orientation for use as epitaxial templates for thin film photovoltaic devices. We develop bias-assisted sputtering for deposition of oriented Pt and Au films with sub-nanometer roughness. We show that biasing the substrate decreases the substrate temperature necessary to achieve epitaxial orientation, with temperature reduction from 600 to 350 °C for Au, and from 750 to 550 °C for Pt, without use of transition metal seed layers. Additionally, this temperature can be further reduced by reducing the growth rate. Biased deposition with varying substrate bias power and working pressure also enables control of the film morphology and surface roughness.
Author: Ka-yi Chan
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ISBN:
Category : Pulsed laser deposition
Languages : en
Pages : 252
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Author: Connie Rebecca Bednarski-Meinke
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ISBN:
Category : Diamond thin films
Languages : en
Pages : 378
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Author: Annabel Susan Nickles
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ISBN:
Category :
Languages : en
Pages : 418
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Author: American Ceramic Society
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ISBN:
Category : Ceramic materials
Languages : en
Pages : 794
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Author: Huyang Xie
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ISBN:
Category :
Languages : en
Pages : 320
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Author: Ashok Kumar Dua
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ISBN:
Category : Technology & Engineering
Languages : en
Pages : 118
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Book Description
Dua, former head of the materials science section at the Bhabha Atomic Research Center in India, examines the past, present, and future of diamond thin films. He details their methods of preparation and characterization, and the mechanisms of nucleation, growth, and epitaxy of CVD diamond. Reactor-scale modeling, in situ diagnostics, and the processing of diamond films are some other topics covered. Concluding chapters look ahead to expected applications, recent developments, and new ideas in the field. There is no subject index. Annotation : 2004 Book News, Inc., Portland, OR (booknews.com).
Author: Bi-Ming Yen
Publisher:
ISBN:
Category :
Languages : en
Pages : 386
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