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Author: CEC, DG for Telecommunications
Publisher: Springer Science & Business Media
ISBN: 9400907052
Category : Computers
Languages : en
Pages : 894
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Book Description
The 1990 ESPRIT Conferene is being held in Brussels from the 12th November to the 15th November. Well over 1700 participants from all over Europe and overseas are expected to attend the various events. The Conference will offer the opportunity to be updated on the results ofthe ESPRITprojects and Basic Research actions andto develop international contacts with colleagues, both within a specific branch of Information Technology and across different branches. The first three days of the Conference are devoted to presentations of Esprit projects and Basic Research actions structured into plenary and parallel sessions; the scope of the Conference has been broadened this year by the inclusion of several well-known international speakers. All areas of Esprit work are covered: Microelectronics, Information Processing Systems, Office and Business Systems, Computer Integrated Manufacturing, Basic Research and aspects of the Information Exchange System. During the IT Forum on Thursday November 15th, major European industrial and political decision-makers will address the audience in the morning. In the afternoon, a Round Table will discuss the impact of Information Technology on society. More than 100 projects and actions will display their major innovations and achieve ments at the Esprit Exhibition which will be, for the first time, open to the general public.
Author: CEC, DG for Telecommunications
Publisher: Springer Science & Business Media
ISBN: 9400907052
Category : Computers
Languages : en
Pages : 894
Get Book Here
Book Description
The 1990 ESPRIT Conferene is being held in Brussels from the 12th November to the 15th November. Well over 1700 participants from all over Europe and overseas are expected to attend the various events. The Conference will offer the opportunity to be updated on the results ofthe ESPRITprojects and Basic Research actions andto develop international contacts with colleagues, both within a specific branch of Information Technology and across different branches. The first three days of the Conference are devoted to presentations of Esprit projects and Basic Research actions structured into plenary and parallel sessions; the scope of the Conference has been broadened this year by the inclusion of several well-known international speakers. All areas of Esprit work are covered: Microelectronics, Information Processing Systems, Office and Business Systems, Computer Integrated Manufacturing, Basic Research and aspects of the Information Exchange System. During the IT Forum on Thursday November 15th, major European industrial and political decision-makers will address the audience in the morning. In the afternoon, a Round Table will discuss the impact of Information Technology on society. More than 100 projects and actions will display their major innovations and achieve ments at the Esprit Exhibition which will be, for the first time, open to the general public.
Author: John D. Cressler
Publisher: CRC Press
ISBN: 1420066919
Category : Technology & Engineering
Languages : en
Pages : 472
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Book Description
SiGe HBTs are the most mature of the Si heterostructure devices and not surprisingly the most completely researched and discussed in the technical literature. However, new effects and nuances of device operation are uncovered year-after-year as transistor scaling advances and application targets march steadily upward in frequency and sophistication. Providing a comprehensive treatment of SiGe HBTs, Silicon Heterostructure Devices covers an amazingly diverse set of topics, ranging from basic transistor physics to noise, radiation effects, reliability, and TCAD simulation. Drawn from the comprehensive and well-reviewed Silicon Heterostructure Handbook, this text explores SiGe heterojunction bipolar transistors (HBTs), heterostructure FETs, various other heterostructure devices, as well as optoelectronic components. The book provides an overview, characteristics, and derivative applications for each device covered. It discusses device physics, broadband noise, performance limits, reliability, engineered substrates, and self-assembling nanostructures. Coverage of optoelectronic devices includes Si/SiGe LEDs, near-infrared detectors, photonic transistors for integrated optoelectronics, and quantum cascade emitters. In addition to this substantial collection of material, the book concludes with a look at the ultimate limits of SiGe HBTs scaling. It contains easy-to-reference appendices on topics including the properties of silicon and germanium, the generalized Moll-Ross relations, and the integral charge-control model, and sample SiGe HBT compact model parameters.
Author: Y. Nissim
Publisher: Springer Science & Business Media
ISBN: 9400909136
Category : Science
Languages : en
Pages : 361
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Book Description
In the field of logic circuits in microelectronics, the leadership of silicon is now strongly established due to the achievement of its technology. Near unity yield of one million transistor chips on very large wafers (6 inches today, 8 inches tomorrow) are currently accomplished in industry. The superiority of silicon over other material can be summarized as follow: - The Si/Si0 interface is the most perfect passivating interface ever 2 obtained (less than 10" e y-I cm2 interface state density) - Silicon has a large thermal conductivity so that large crystals can be pulled. - Silicon is a hard material so that large wafers can be handled safely. - Silicon is thermally stable up to 1100°C so that numerous metallurgical operations (oxydation, diffusion, annealing ... ) can be achieved safely. - There is profusion of silicon on earth so that the base silicon wafer is cheap. Unfortunatly, there are fundamental limits that cannot be overcome in silicon due to material properties: laser action, infra-red detection, high mobility for instance. The development of new technologies of deposition and growth has opened new possibilities for silicon based structures. The well known properties of silicon can now be extended and properly used in mixed structures for areas such as opto-electronics, high-speed devices. This has been pioneered by the integration of a GaAs light emitting diode on a silicon based structure by an MIT group in 1985.
Author:
Publisher:
ISBN:
Category : Physics
Languages : en
Pages : 1248
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Book Description
Author: Don W. Shaw
Publisher: Mrs Proceedings
ISBN:
Category : Science
Languages : en
Pages : 678
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Book Description
The MRS Symposium Proceeding series is an internationally recognised reference suitable for researchers and practitioners.
Author: D. R. Vij
Publisher: CRC Press
ISBN: 1000034372
Category : Science
Languages : en
Pages : 556
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Book Description
An electroluminescent (EL) material is one that emits electromagnetic (EM) radiation in the visible or near visible range when an electric field is applied to it. EL materials have a vast array of applications in the illumination and displays industries, from cheap and energy efficient lighting to large high resolution flat panel displays.
Author: Y. Shiraki
Publisher: Elsevier
ISBN: 0444596895
Category : Science
Languages : en
Pages : 289
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Book Description
The preparation of silicon germanium microstructures, their physical, chemical and electrical characterization, and their device processing and application are reviewed in this book. Special emphasis is given to ultrathin Si/Ge superlattices. Topics covered include: Wafer preparation and epitaxial growth; surface effects driven phenomena, such as clustering, segregation, 'surfactants'; Analysis, both in situ and ex situ; Strain adjustment methods; High quality buffers; Modification of material properties by quantum wells and superlattices; Devices: Novel concepts, processing, modelling, demonstrators. The questions highlighted, particularly those articles comparing related or competing activities, will provide a wealth of knowledge for all those interested in the future avenues of theory and applications in this field.
Author: A. G. Cullis
Publisher: CRC Press
ISBN:
Category : Science
Languages : en
Pages : 818
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Book Description
These proceedings contain the invited and contributed papers from the international MSM conference and present the work of many leaders in the field. The papers provide information on the most up-to-date advances in semiconductor microscopy spanning both fundamental research areas and developments in device processing technologies. As the major forum for the presentation of worldwide research papers in this field, this volume will be essential reading for all researchers probing the characteristics of semiconducting materials.
Author: Brian Wade Dodson
Publisher:
ISBN:
Category : Crystal growth
Languages : en
Pages : 884
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Book Description
Author:
Publisher:
ISBN:
Category : Microscopes
Languages : en
Pages : 1400
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Book Description
