Properties of Gallium Arsenide PDF Download
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Author: M. R. Brozel
Publisher: Inst of Engineering & Technology
ISBN: 9780852968857
Category : Technology & Engineering
Languages : en
Pages : 981
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Book Description
It was in 1986 that INSPEC (The Information Division of the Institution of Electrical Engineers) published the book Properties of Gallium Arsenide. Since then, major developments have taken place. This third edition is comprised of 150 specially commissioned articles contributed by experts from the USA, Europe and Japan.
Author: M. R. Brozel
Publisher: Inst of Engineering & Technology
ISBN: 9780852968857
Category : Technology & Engineering
Languages : en
Pages : 981
Get Book Here
Book Description
It was in 1986 that INSPEC (The Information Division of the Institution of Electrical Engineers) published the book Properties of Gallium Arsenide. Since then, major developments have taken place. This third edition is comprised of 150 specially commissioned articles contributed by experts from the USA, Europe and Japan.
Author: Jasprit Singh
Publisher: Cambridge University Press
ISBN: 1139440578
Category : Technology & Engineering
Languages : en
Pages : 556
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Book Description
A graduate textbook presenting the underlying physics behind devices that drive today's technologies. The book covers important details of structural properties, bandstructure, transport, optical and magnetic properties of semiconductor structures. Effects of low-dimensional physics and strain - two important driving forces in modern device technology - are also discussed. In addition to conventional semiconductor physics the book discusses self-assembled structures, mesoscopic structures and the developing field of spintronics. The book utilizes carefully chosen solved examples to convey important concepts and has over 250 figures and 200 homework exercises. Real-world applications are highlighted throughout the book, stressing the links between physical principles and actual devices. Electronic and Optoelectronic Properties of Semiconductor Structures provides engineering and physics students and practitioners with complete and coherent coverage of key modern semiconductor concepts. A solutions manual and set of viewgraphs for use in lectures are available for instructors, from
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Publisher:
ISBN:
Category : Dissertations, Academic
Languages : en
Pages : 984
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Book Description
Author:
Publisher:
ISBN:
Category : Aeronautics
Languages : en
Pages : 702
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Book Description
Author: University of Illinois (Urbana-Champaign campus). Engineering Experiment Station
Publisher:
ISBN:
Category : Engineering
Languages : en
Pages : 416
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Book Description
Author: Gerald B. Stringfellow
Publisher: CRC Press
ISBN: 100011225X
Category : Science
Languages : en
Pages : 680
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Book Description
Gallium Arsenide and Related Compounds 1991emphasizes current results on the materials, characterization, and device aspects of a broad range of semiconductor materials, particularly the III-V compounds and alloys. The book is a valuable reference for researchers in physics, materials science, and electronics and electrical engineering who work on III-V compounds.
Author:
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Category : Power resources
Languages : en
Pages : 500
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Book Description
Author: B. D. Sartwell
Publisher: Elsevier
ISBN: 1483274640
Category : Technology & Engineering
Languages : en
Pages : 665
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Book Description
Surface & Coatings Technology, Volumes 59–60 presents the proceedings of the Third International Conference on Plasma Surface Engineering, held in Garmisch-Partenkirchen, Germany, on October 26–29, 1992. This book discusses the widespread applications of plasma and particle beam assisted methods in surface and thin film technology. Volume 59 is organized into 11 parts encompassing 69 chapters while Volume 60 is comprised of eight parts encompassing 49 chapters. This compilation of papers begins with an overview of the kinetic modelling of low pressure high frequency discharges. This text then examines the effect of various deposition parameters on the growth of chamber wall deposits. Other chapters consider the physiochemical behavior of ceramic materials for space applications. This book discusses as well the economic aspects of the application of plasma surface technologies. The reader is also introduced to the environmental aspects of physical vapor deposition coating technology. This book is a valuable resource for plasma surface engineers, technologists, and researchers.
Author: A.G. Milnes
Publisher: Elsevier
ISBN: 0323141366
Category : Technology & Engineering
Languages : en
Pages : 430
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Book Description
Heterojunctions and Metal-Semiconductor Junctions discusses semiconductor-semiconductor heterojunctions and metal-semiconductor heterojunctions, which are of significant practical importance today and also of considerable scientific interest, with worthwhile problems still to be explored and understood. Many classes of heterojunctions are believed to have new and valuable applications. Although some aspects of heterojunction behavior remain areas for continued scientific and technological study, the main outlines of the subject are clear. This book comprises nine chapters, and begins with an introduction to semiconductor heterojunctions. Succeeding chapters then discuss semiconductor p-n heterojunction models and diode behavior; heterojunction transistors; isotype (n-n, p-p) heterojunctions; optical properties of heterojunctions and heterojunction lasers; metal-semiconductor barriers; metal-semiconductor junction behavior; high yield photoemissive cathodes; and fabrication of heterojunctions. This book will be of interest to practitioners in the fields of applied physics.
Author: E. Kasper
Publisher: CRC Press
ISBN: 1351085077
Category : Technology & Engineering
Languages : en
Pages : 306
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Book Description
This subject is divided into two volumes. Volume I is on homoepitaxy with the necessary systems, techniques, and models for growth and dopant incorporation. Three chapters on homoepitaxy are followed by two chapters describing the different ways in which MBE may be applied to create insulator/Si stackings which may be used for three-dimensional circuits. The two remaining chapters in Volume I are devoted to device applications. The first three chapters of Volume II treat all aspects of heteroepitaxy with the exception of the epitaxial insulator/Si structures already treated in volume I.
