GaN and Related Alloys, MRS Symposium Proceedings Held in Boston, Massachusetts on 30 November-4 December 1998. Volume 537 PDF Download
Are you looking for read ebook online? Search for your book and save it on your Kindle device, PC, phones or tablets. Download GaN and Related Alloys, MRS Symposium Proceedings Held in Boston, Massachusetts on 30 November-4 December 1998. Volume 537 PDF full book. Access full book title GaN and Related Alloys, MRS Symposium Proceedings Held in Boston, Massachusetts on 30 November-4 December 1998. Volume 537 by . Download full books in PDF and EPUB format.
Author:
Publisher:
ISBN:
Category :
Languages : en
Pages : 0
Get Book Here
Book Description
This proceedings volume is the permanent record of the Materials Research Society symposium entitled "GaN and Related Alloys," held November 30-December 4, 1998, at the MRS Fall Meeting in Boston, Massachusetts. The symposium covered the full spectrum of activity in the GaN and related materials arena. These semiconductors are finding applications in full-color displays, high- density information storage, white lighting for indoor or backlit displays, solar-blind UV detectors, high-power/high-temperature electronics, and for covert undersea communications. The symposium contained a plenary session with talks on laser diodes, electronic devices, substrates, etching, contacts, and piezoelectric and pyroelectric properties. This was followed by sessions on laser diodes and spectroscopy; conventional growth and characterization; epitaxial lateral overgrowth and selective growth; theory, defects, transport, and bandstructure; surfaces, theory, and processing; LEDs, UV detectors, and optical properties; electronic devices and processing; quantum dots; novel growth, doping, and processing; and finally, rare-earth doping and optical emission.
Author:
Publisher:
ISBN:
Category :
Languages : en
Pages : 0
Get Book Here
Book Description
This proceedings volume is the permanent record of the Materials Research Society symposium entitled "GaN and Related Alloys," held November 30-December 4, 1998, at the MRS Fall Meeting in Boston, Massachusetts. The symposium covered the full spectrum of activity in the GaN and related materials arena. These semiconductors are finding applications in full-color displays, high- density information storage, white lighting for indoor or backlit displays, solar-blind UV detectors, high-power/high-temperature electronics, and for covert undersea communications. The symposium contained a plenary session with talks on laser diodes, electronic devices, substrates, etching, contacts, and piezoelectric and pyroelectric properties. This was followed by sessions on laser diodes and spectroscopy; conventional growth and characterization; epitaxial lateral overgrowth and selective growth; theory, defects, transport, and bandstructure; surfaces, theory, and processing; LEDs, UV detectors, and optical properties; electronic devices and processing; quantum dots; novel growth, doping, and processing; and finally, rare-earth doping and optical emission.
Author:
Publisher:
ISBN:
Category :
Languages : en
Pages : 0
Get Book Here
Book Description
Author: S. J. Pearton
Publisher:
ISBN:
Category : Technology & Engineering
Languages : en
Pages : 1056
Get Book Here
Book Description
This book covers the full spectrum of activity in the GaN and related materials arena. These semiconductors are finding applications in full-color displays, high-density information storage, white lighting for outdoor or backlit displays, solar-blind UV detectors, high-power/high-temperature electronics, and covert undersea communications. Progress is been reported in the growth of thick layers on patterned substrates by various methods, leading to lower overall defect concentrations and improved current-voltage and reliability characteristics. The rapidly increasing market for blue/green LEDs is also noted by the entry of a number of new companies to the field. While these emitter technologies continue to be dominated by MOCVD material, there are exciting reports of UV detectors and HFET structures grown by MBE with device performance at least as good as by MOCVD. Topics include: GaN electronic and photonic devices; laser diodes and spectroscopy; electronic devices and processing; quantum dots and processing; novel growth, doping and processing and rare-earth doping and optical emission.
Author:
Publisher:
ISBN:
Category :
Languages : en
Pages : 861
Get Book Here
Book Description
Symposium L, "GaN and Related Alloys-2002," was held December 2-6 at the 2002 MRS Fall Meeting in Boston, Massachusetts. During nine half-day oral sessions, nine invited talks and 55 contributed talks were given. In three poster sessions, 161 posters were presented. This year's nitride symposium again was characterized by a wide scope of nitride related advances spanning from basic materials physics over process technology to high performance devices. Strong development was reported in bulk growth of GaN and AIN, growth on various substrates and substrate orientations, optical properties of InN, defect and doping analysis of p-doped GaN, and full consideration of polarization properties. These led to new performance records in visible light emitter technology, i.e., higher efficiency/ higher brightness, UV emitters with shorter wavelength, and UV and photo detectors. A strong development is also seen in nitride-based electronic devices with new heterostructure FET designs for RF power applications including such on Si substrates and wafer fusion. These symposium proceedings capture a crosscut of the exciting developments in this rapidly progressing and commercializing field. This volume will be useful for researchers working in the field of nitrides, and for students who seek entry into the subject.
Author:
Publisher:
ISBN:
Category : Electroluminescent devices
Languages : en
Pages : 1074
Get Book Here
Book Description
Author:
Publisher:
ISBN:
Category :
Languages : en
Pages : 0
Get Book Here
Book Description
Symposium L, "GaN and Related Alloys-2002," was held December 2-6 at the 2002 MRS Fall Meeting in Boston, Massachusetts During nine half-day oral sessions, nine invited talks and 53 contributed talks were given in three poster sessions, 161 posters were presented. This year's nitride symposium again was characterized by a wide scope of nitride related advances spanning from basic materials physics over process technology to high performance devices. Strong development was reported in bulk growth of GaN and AIN, growth on various substrates and substrate orientations, optical properties of InN, defect and doping analysis of p-doped GaN, and full consideration of polarization properties. These led to new performance records in visible light emitter technology, i.e., higher efficiency/higher brightness, UV emitters with shorter wavelength, and UV and photo detectors. A strong development is also seen in nitride-based electronic devices with new heterostructure FET designs for RF power applications including such on Si substrates and wafer fusion. These symposium proceedings capture a crosscut of the exciting developments in this rapidly progressing and commercializing field. This volume will be useful for researchers working in the field of nitrides, and for students who seek entry into the subject.
Author: Martin Kuball
Publisher:
ISBN:
Category : Science
Languages : en
Pages : 896
Get Book Here
Book Description
The MRS Symposium Proceeding series is an internationally recognised reference suitable for researchers and practitioners.
Author: M. Tenhover
Publisher: Cambridge University Press
ISBN: 9780931837456
Category : Technology & Engineering
Languages : en
Pages : 484
Get Book Here
Book Description
The MRS Symposium Proceeding series is an internationally recognised reference suitable for researchers and practitioners.
Author: John E. Northrup
Publisher:
ISBN:
Category : Technology & Engineering
Languages : en
Pages : 912
Get Book Here
Book Description
The MRS Symposium Proceeding series is an internationally recognised reference suitable for researchers and practitioners.
Author: B. C. Giessen
Publisher: Cambridge University Press
ISBN: 9780931837234
Category : Technology & Engineering
Languages : en
Pages : 484
Get Book Here
Book Description
The MRS Symposium Proceeding series is an internationally recognised reference suitable for researchers and practitioners.
