Author: Rebecca Jane Welty
Publisher:
ISBN:
Category :
Languages : en
Pages : 332
Book Description
GaAs-based Epitaxial Structures for Heterojunction Bipolar Transistors with Increased Efficiency
Author: Rebecca Jane Welty
Publisher:
ISBN:
Category :
Languages : en
Pages : 332
Book Description
Publisher:
ISBN:
Category :
Languages : en
Pages : 332
Book Description
Current Trends In Heterojunction Bipolar Transistors
Author: M F Chang
Publisher: World Scientific
ISBN: 9814501069
Category : Technology & Engineering
Languages : en
Pages : 437
Book Description
Recent advances in communication, digital signal processing and computational systems demand very high performance electronic circuits. Heterojunction Bipolar Transistors (HBTs) have the potential of providing a more efficient solution to many key system requirements through intrinsic device advantages. This book reviews the present status of GaAs, InP and silicon-based HBT technologies and their applications to digital, analog, microwave and mixed-signal circuits and systems. It represents the first major effort to cover the complete scope of the HBT technology development in the past decade, starting from the fundamental device physics, material growth, device reliability, scaling, processing, modeling to advanced HBT integrated circuit design for various system applications.
Publisher: World Scientific
ISBN: 9814501069
Category : Technology & Engineering
Languages : en
Pages : 437
Book Description
Recent advances in communication, digital signal processing and computational systems demand very high performance electronic circuits. Heterojunction Bipolar Transistors (HBTs) have the potential of providing a more efficient solution to many key system requirements through intrinsic device advantages. This book reviews the present status of GaAs, InP and silicon-based HBT technologies and their applications to digital, analog, microwave and mixed-signal circuits and systems. It represents the first major effort to cover the complete scope of the HBT technology development in the past decade, starting from the fundamental device physics, material growth, device reliability, scaling, processing, modeling to advanced HBT integrated circuit design for various system applications.
Heterojunction Bipolar Transistors for Circuit Design
Author: Jianjun Gao
Publisher: John Wiley & Sons
ISBN: 1118921550
Category : Technology & Engineering
Languages : en
Pages : 394
Book Description
A highly comprehensive summary on circuit related modeling techniques and parameter extraction methods for heterojunction bipolar transistors Heterojunction Bipolar Transistor (HBT) is one of the most important devices for microwave applications. The book details the accurate device modeling for HBTs and high level IC design using HBTs Provides a valuable reference to basic modeling issues and specific semiconductor device models encountered in circuit simulators, with a thorough reference list at the end of each chapter for onward learning Offers an overview on modeling techniques and parameter extraction methods for heterojunction bipolar transistors focusing on circuit simulation and design Presents electrical/RF engineering-related theory and tools and include equivalent circuits and their matrix descriptions, noise, small and large signal analysis methods
Publisher: John Wiley & Sons
ISBN: 1118921550
Category : Technology & Engineering
Languages : en
Pages : 394
Book Description
A highly comprehensive summary on circuit related modeling techniques and parameter extraction methods for heterojunction bipolar transistors Heterojunction Bipolar Transistor (HBT) is one of the most important devices for microwave applications. The book details the accurate device modeling for HBTs and high level IC design using HBTs Provides a valuable reference to basic modeling issues and specific semiconductor device models encountered in circuit simulators, with a thorough reference list at the end of each chapter for onward learning Offers an overview on modeling techniques and parameter extraction methods for heterojunction bipolar transistors focusing on circuit simulation and design Presents electrical/RF engineering-related theory and tools and include equivalent circuits and their matrix descriptions, noise, small and large signal analysis methods
Molecular Beam Epitaxial Growth of GaAs and GaAsySb1-y for Heterojunction Bipolar Transistors
Author: G. I. Hobson
Publisher:
ISBN:
Category :
Languages : en
Pages :
Book Description
Publisher:
ISBN:
Category :
Languages : en
Pages :
Book Description
Gallium and Gallium Arsenide
Author: Deborah A. Kramer
Publisher:
ISBN:
Category : Gallium arsenide industry
Languages : en
Pages : 36
Book Description
Publisher:
ISBN:
Category : Gallium arsenide industry
Languages : en
Pages : 36
Book Description
Fabrication of GaAs Devices
Author: Albert G. Baca
Publisher: IET
ISBN: 9780863413537
Category : Technology & Engineering
Languages : en
Pages : 372
Book Description
This book provides fundamental and practical information on all aspects of GaAs processing and gives pragmatic advice on cleaning and passivation, wet and dry etching and photolithography. Other topics covered include device performance for HBTs (Heterojunction Bipolar Transistors) and FETs (Field Effect Transistors), how these relate to processing choices, and special processing issues such as wet oxidation, which are especially important in optoelectronic devices. This book is suitable for both new and practising engineers.
Publisher: IET
ISBN: 9780863413537
Category : Technology & Engineering
Languages : en
Pages : 372
Book Description
This book provides fundamental and practical information on all aspects of GaAs processing and gives pragmatic advice on cleaning and passivation, wet and dry etching and photolithography. Other topics covered include device performance for HBTs (Heterojunction Bipolar Transistors) and FETs (Field Effect Transistors), how these relate to processing choices, and special processing issues such as wet oxidation, which are especially important in optoelectronic devices. This book is suitable for both new and practising engineers.
Carbon-doped InP/InGaAs Heterojunction Bipolar Transistors for High Speed Applications
Author: Russell C. Gee
Publisher:
ISBN:
Category :
Languages : en
Pages : 270
Book Description
Publisher:
ISBN:
Category :
Languages : en
Pages : 270
Book Description
Novel Applications of GaInP to GaAs Based Heterojunction Bipolar Transistors (HBTs)
Author: Shyh-Liang Fu
Publisher:
ISBN:
Category :
Languages : en
Pages : 272
Book Description
Publisher:
ISBN:
Category :
Languages : en
Pages : 272
Book Description
Chemical Beam Epitaxial Regrowth, Etching, and Doping of III-V Compounds Using Novel Gas Sources for Applications of Heterojunction Bipolar Transistors
Author: Nein-Yi Li
Publisher:
ISBN:
Category :
Languages : en
Pages : 446
Book Description
Publisher:
ISBN:
Category :
Languages : en
Pages : 446
Book Description
Current Trends in Heterojunction Bipolar Transistors
Author: M. F. Chang
Publisher: World Scientific
ISBN: 9789810220976
Category : Technology & Engineering
Languages : en
Pages : 448
Book Description
Recent advances in communication, digital signal processing and computational systems demand very high performance electronic circuits. Heterojunction Bipolar Transistors (HBTs) have the potential of providing a more efficient solution to many key system requirements through intrinsic device advantages. This book reviews the present status of GaAs, InP and silicon-based HBT technologies and their applications to digital, analog, microwave and mixed-signal circuits and systems. It represents the first major effort to cover the complete scope of the HBT technology development in the past decade, starting from the fundamental device physics, material growth, device reliability, scaling, processing, modeling to advanced HBT integrated circuit design for various system applications.
Publisher: World Scientific
ISBN: 9789810220976
Category : Technology & Engineering
Languages : en
Pages : 448
Book Description
Recent advances in communication, digital signal processing and computational systems demand very high performance electronic circuits. Heterojunction Bipolar Transistors (HBTs) have the potential of providing a more efficient solution to many key system requirements through intrinsic device advantages. This book reviews the present status of GaAs, InP and silicon-based HBT technologies and their applications to digital, analog, microwave and mixed-signal circuits and systems. It represents the first major effort to cover the complete scope of the HBT technology development in the past decade, starting from the fundamental device physics, material growth, device reliability, scaling, processing, modeling to advanced HBT integrated circuit design for various system applications.